21ECT701 Advance VLSI Revised Model QP
21ECT701 Advance VLSI Revised Model QP
21ECT701 Advance VLSI Revised Model QP
21ECT701
Advanced VLSI
(Model Paper)
Time: 3 Hours Maximum Marks: 100
Marks CO RBT
level
1. a. Analyze the working of CMOS SR latch circuit based on NOR gates 10 M CO1 L2
b. Implement F = (A+BC)’ using Dynamic CMOS logic and explain its 10 M CO1 L3
important characteristics.
OR
2. a. Describe the static behavior of the BiCMOS inverter. 10 M CO1 L2
b. Explain the working of CMOS AOI realization of the JK Latch 10 M CO1 L2
3. a. With neat block diagram and logical expressions illustrate addition 10 M CO2 L2
with carry generation and propagation logic
b. Describe with block diagram and expression the working principle of 10 M CO2 L2
2’s complement multiplication.
OR
4. a. Describe the carry select adder with neat block diagram and logical 10 M CO2 L2
expressions.
b. Draw the flow chart of the ASIC design flow and explain the 10 M CO2 L3
importance of each step.
5. a. Compute the shortest path weights of the graph using Belman-Ford 10 M CO3 L2
algorithm.
Fig. 5a
Figure 6a.
b. Given f = (a+b)c; g= bcd. For this pair, write the following diagrams 10 M CO3 L3
i. ROBDD for the function f= (a+b)c with the variable order (a,b,c)
ii. ROBDD for the function pair with the variable order (d,a,b,c)
iii. Unique table for the ROBDD obtained in 2.
9. a Describe the goals and objectives of Floor planning and placement in 10 M CO5 L2
IC manufacturing.