International Journal of Scientific and Research Publications, Volume 3, Issue 10, October 2013 1

ISSN 2250-3153

Modeling and Simulation of PV Cell using One-diode

model
Jitendra Bikaneria*, Surya Prakash Joshi**, A.R. Joshi***
*
Lecturer, GPC, Rajsamand
**
B.E., SITE, Nathdwara
***
Asst. Service Manager, Kamal trucking, Udaipur

Abstract- The focus of this paper is on one diode photovoltaic simulate in order to consider the irradiance and temperature
cell model. The theory as well as the construction and working of change, the I-V characteristics of PV cell is also used in this
photovoltaic cells using single diode method are also presented. paper.
Simulation studies are carried out with different temperatures &
irradiations. Based on this study a conclusion is drawn with
comparison with ideal diode. II. MODELING AND SIMULATION
As mentioned above the solar cells are semiconductor with a
General Terms- In recent years, significant photovoltaic (PV) p-n junction fabricated in a thin wafer or layer of
deployment has occurred, particularly in Germany, Spain and semiconductors. When exposed to light a photo current
Japan [1]. Also, PV energy is going to become an important proportional to the solar radiation is generated, if the photon
source in coming years in Portugal, as it has highest source of energy is greater than the band gap. In the dark, the I-V
sunshine radiation in Europe. characteristics of a solar cell have an exponential characteristic
similar to that of a diode [7].
Presently the tenth largest PV power plant in the world is in A detailed approach to PV cell modeling based on a
Moura, Portugal, which has an installed capacity of 46 MW and mathematical description of the equivalent electrical circuit of a
aims to reach 1500 MW of installed capacity by 2020, as PV cell. Three models are used for modeling of the PV cell
stated by the Portuguese National Strategy ENE 2020, module or array. In comparison the most commonly used
multiplying tenfold the existing capacity [2]. The solar cells are configuration is the one-diode model that represents the electrical
basically made of semiconductors which are manufactured using behavior of the p-n junction.
different process [4]. The intrinsic properties and the incoming The simplest model of a PV cell is shown as an equivalent
solar radiation are responsible for the type of electric energy circuit below that consists of an ideal current source in parallel
produced [5]. with an ideal diode is known as ideal equivalent circuit of PV
cell. The current source represents the current generated by
The solar radiation is composed of photons of different photons and its output is constant under constant temperature and
energies, and some are absorbed at the p-n junction. Photons with constant incident radiation of light
energies lower than the band gap of the solar cell are useless and
generate no voltage or electric current. Photons with energy
superior to the band gap generate electricity, but only the energy
corresponding to the band gap is used. The remainder of
energy is dissipated as heat in the body of the solar cell [6].

Keywords- PV cell, solar cell, one diode model

I. INTRODUCTION

A PV system directly converts sunlight into electricity. Solar

cell is the main device of a PV system which is grouped to
form panels or arrays. To process electricity from PV devices
Fig.1 Ideal solar cell with one-diode.

power electronic converters are required. These converters may Where G is the solar irradiance, Is is the photo generated
be used to regulate the voltage and current at the load, to control current, Id is the diode current, I is the output current, and V is
the power flow in grid-connected systems, and for the maximum the terminal voltage.
power point tracking (MPPT) of the device [3]. The I-V characteristic of the ideal solar cell with one-diode
model is given by:-
In this paper we have considered one diode PV cell. The
effect of the series resistance is also included in this. The ………….. (1)
equivalent circuit of a solar cell with its parameters as a tool to

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International Journal of Scientific and Research Publications, Volume 3, Issue 10, October 2013 2
ISSN 2250-3153

Where I0 is the diode reverse bias saturation current, q is the for I = 0 ….. (7)
electron charge, m is the diode ideality factor, k is the
The output power is given by:-
Boltzmann’s constant, and T is the cell temperature.
For the same irradiance and p-n junction temperature ………….. (8)
condition, the short circuit current ISC it is the greatest value of
the current generated by the cell. The short circuit current ISC is The diode saturation current at the operating-cell temperature is
given by:- given by:-

………….. (9)
I = Is for V = 0 ………….. (2)

For the same irradiance and p-n junction temperature Where is the diode saturation current at reference
condition, the open circuit voltage VOC is the greatest value of condition, Tc is the p-n junction cell temperature, T* is the cell
the voltage at the terminals. The open circuit voltage V OC is p-n junction temperature at reference condition and ε is the band
given by:- gap.

For I = 0 …….. (3)

III. SIMULATION RESULTS
For simulation result the mathematical models for the ideal
The output power is given by:- solar cell and the solar cell with series resistance were
implemented in Matlab/Simulink. We use the BP SX 150S PV
module. The electrical parameter for BP SX 150S PV module is
………….. (4) given by:-

2.1 Solar Cell with Series Resistance:- Electrical Characteristics data of PV module
For more accurate result the model adding a series Maximum Power (Pmax) = 150W
resistance. The configuration of the simulated solar cell with one- Voltage at Pmax (Vmp) = 34.5V
diode and series resistance is shown in Figure 2 Current at Pmax (Imp) = 4.35A
Open-circuit voltage (Voc) = 43.5V
Short-circuit current (Isc) = 4.75A
Temperature coefficient of Isc = 0.065 ± 0.015 % / oC
Temperature coefficient of Voc = -160 ± 20 mV/ oC
Temperature coefficient of power = -0.5 ± 0.05 % / oC
NOCT = 47 ± 2 oC

Fig. 2. Solar cell with single-diode and series resistance.

The I-V characteristics of the solar cell with one-diode and

series resistance are given by:

……………..(5)

For the same irradiance and p-n junction temperature

conditions, the effect of a series resistance in the PV model
implies the use of a recurrent equation to determine the output
current in function of the terminal voltage. The Newton-Raphson
method converges more rapidly and for both positive and
negative currents. The short circuit current ISC is given by:-

…... (6)
Fig:-(a) I-V characteristic for the temperature
The series resistance is small and negligible, the open circuit variation between 0 and 750C.
voltage Voc is given by:-

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International Journal of Scientific and Research Publications, Volume 3, Issue 10, October 2013 3
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Fig:- (e) P-V characteristics for a diode ideality

Fig:- (b) P-V characteristics for various condition of factor variation between 1 and 2.
solar irradiation

Fig:- (c) P-V characteristics for temperature Fig:- (f) I-V characteristics for a diode ideality
between 0 and 750C factor variation between 1 and 2.

IV. CONCLUSION
The behavior of ideal solar cell model and the behavior of the
solar cell with series resistance model are studied in this paper.
Included effects are: temperature dependence, solar radiation
change, and diode ideality factor and series resistance influence.
The solar cell with series resistance model offers a more realistic
behavior for the photovoltaic systems. Particularly, this model is
to be considered in panels with series cells, because the series
resistance is proportional to the number of solar cells in the
panel.
Modeling of photovoltaic modules are not difficult, of realize
than when is known the model of photovoltaic cell. Also have
been demonstrated that the temperature and the solar irradiation
influenced suggestive the system performance.
Fig:-(d) I-V characteristic for various conditions
of solar irradiation.

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International Journal of Scientific and Research Publications, Volume 3, Issue 10, October 2013 4
ISSN 2250-3153

ACKNOWLEDGMENTS [6] “Photovoltaic systems technology,” Universitat Kassel, Kassel, Germany,

2003.
Our thanks to the Mrs. Neelam Bikaneria, Mr. Roshan Teli, [7] G.R. Walker, “Evaluating MPPT topologies using a Matlab PV
& Mr. Ravi Nagda. model”, Journal of Electrical & ElectronicEngineering, Vol. 21, No. 1, pp.
49-56, 2001.

REFERENCES
[1] F. Spertino and J. S. Akilimali, “Are manufacturing I–V mismatch and
AUTHORS
reverse currents key factors in large photovoltaic arrays?”, IEEE First Author – Jitendra Bikaneria, M.tech., Lecturer,
Transactions on Industrial Electronics, Vol. 56, No. 11, pp. 4520-4531,
Nov. 2009.
Government Polytechnic College, Rajsamand, INDIA.
[2] M. Laranja, “Portuguese National Strategy
[email protected]
ENE2020”.Available:http://www.ccr-norte.pt/norte2020/laranja.pdf
[3] M.G. Villalva, J.R.Gazoli, and E.R. Filho, “Comprehensive approach to Second Author – Surya Prakash Joshi, B.E., Srinathji Institute
modeling and simulation of photovoltaic arrays”, IEEE Transactions of Technology & Engineering, Nathdwara. INDIA.
on Power Electronics, Vol.24, No. 5, pp. 1198-1208, May 2009. [email protected]
[4] A. S. Sedra and K. C. Smith, Microelectronic Circuits. London, U.K.:
Oxford Univ. Press, 2006.
Third Author – A.R. Joshi, Asst. Service Manager, Kamal
[5] M.A. Eltawil, Z. Zhao, “Grid-connected photovoltaic power systems:
Technical and potential problems—A review”, Renewable and trucking, Udaipur, INDIA.
Sustainable Energy Reviews, Vol. 14, No. 1, pp.112–129, Jan. 2010. [email protected]

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