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EDC Model Paper

Uploaded by

mannammanikanta7
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SRK23 SET - 1

Sub Code: 23EC3T02

II B.Tech I Semester Regular Examinations, DEC-2024


ELECTRONIC DEVICES AND CIRCUITS
(ECE)
Time: 3 hours Max Marks:
70M
----------------------------------------------------------------------------------------------
Note: 1. Question paper consists of two parts (Part A and
Part B)
2. Answer all the questions from Part A
3. From Part-B, Answer Five Questions and One Question
from Each Unit
part – A 10 X 2 = 20
M

CO BTL Marks

1. a) Define transition capacitance of a diode.write equation for it. CO1 L1 2M

b) Draw the V-I Characteristics of a practical PN diode. CO1 L1 2M

c) State any four advantages of LED. CO2 L1 2M

d) Explain why transistor is called current controlled device. CO2 L2 2M

e) What is the need for biasing. CO3 L2 2M

f) write any four biasing techniques of BJT. CO3 L1 2M

g) List the JFET parameters with definitions. CO4 L1 2M

h) Name the factors which makes the JFET superior to BJT. CO4 L1 2M

i) Describe the three regions of operation of a MOSFET. CO5 L2 2M

j) discuss constructional details of a depletion type MOSFET. CO5 L2 2M

PART – B 5 X 10 = 50
M

UNIT - I

Define and Derive an expression for continuity equation and explain CO1 L4
2. a) 5M
its importance.
Derive the effect of temperature on characteristics of PN junction CO1 L4
b) 5M
diode.
(OR)
Explain about the current components in PN junction diode with neat CO1 L2
3. a) 5M
sketch.
b) What is the hall effect ?Derive the expression for the hall coefficient. CO1 L1 5M

UNIT – II
4. a) Write a short note on how zener diode acts as a voltage regulator. CO2 L5 5M

b) Discuss the operation of UJT with necessary diagram. CO2 L3 5M

(OR)
Page 1 of 2
Draw and explain the input and output charecteristics of BJT in CO2 L3
5. a) 5M
common base configuration.
b) Explain the operation of photo transistor CO2 L2 5M

UNIT – III
Explain why bias stabilization is needed in a transistor amplifier CO3 L2
6. a) 5M
circuit.
b) Draw the h parameter model for common collector configuration. CO3 L5 5M

(OR)
What is thermal runaway?what is the condition to avoid the thermal CO3 L1
7. a) 5M
runaway.
b) Analyze the cc amplifier using the exact analysis. CO3 L4 5M

UNIT – IV
8. a) Explain the operation of N-channel JFET with neat sketch. CO4 L2 5M

b) Draw the small signal model of JFET in CS cofiguration CO4 L5 5M

(OR)
9. a) List the various biasing circuits used for JFET CO4 L1 5M

A JFET produces gate current IG= 2nAmp.and gate to source voltage CO4 L5
b) 5M
VGS=8V.Determine resistance between gate to source RGS.
UNIT – V

10 Derive V-I characteristics of MOSFET .obtain the expression for ID in CO5 L2


a) 5M
. triode and saturation regions.
b) Explain about transconductance of MOSFET. CO5 L2 5M

(OR)
11 Write a short note on channel length modulation of MOSFET. CO5 L2
a) 5M
.

b) Prove how MOSFET works as a voltage Variable resistor. CO5 L5 5M

*** End of the Question Paper ***

Page 2 of 2

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