Class 12 Physics

Previous Year Questions

Chapter-14 : Semiconductor
Electronics
 Semiconductor Electronics: Materials, Devices and Simple Circuits

1.ELECTRONIC DEVICES

Objective Qs (1 mark)
1. The formation of depletion region in a 𝑝 − 𝑛 junction diode is due to:

(a) movement of dopant atoms

(b) diffusion of both electrons and holes

(c) drift of electrons only

(d) drift of holes only

[CBSE 2023]

2. Which one of the following elements will require the highest energy to take out an electron from
them?
Pb, Ge, C and Si
(a) Ge
(b) C
(c) Si
(d) Pb

[CBSE 2023]

3. In an extrinsic semiconductor, the number density of holes is 4 × 1020 m−3 . If the number
density of intrinsic carriers is 1.2 × 1015 m−3 , the number density of electrons in it is:
(a) 1.8 × 109 m−3
(b) 2.4 × 1010 m−3
(c) 3.6 × 109 m−3
(d) 3.2 × 1010 m−3
[CBSE 2023]
4. At equilibrium, in a 𝑝 − 𝑛 junction diode the net current is:

(a) due to diffusion of majority charge carriers.

(b) due to drift of minority charge carriers.

(c) zero as diffusion and drift currents are equal and opposite.

(d) zero as no charge carriers cross the junction.

[CBSE 2020]

5. In an 𝑛-type semiconductor, the donor energy level lies:

 (a) at the centre of the energy gap

(b) just below the conduction band

(c) just above the valance band

(d) In the conduction band.

[CBSE 2020]

For Question 6, two statements are given one labelled Assertion (A) and other labelled Reason

(R). Select the correct answer to these questions from the options as given below.

(a) If both Assertion and Reason are true and Reason is correct explanation of Assertion.

(b) It both Assertion and Reason are true but Reason is not the correct explanation of Assertion.

(c) If Assertion is true but Reason is false.

(d) If both Assertion and Reason are false.

6. Assertion (A): The electrical conductivity of a semiconductor increases on doping. Reason (R):
Doping always increases the number of electrons in the semiconductor.
[CBSE SQP 2022]
7. When a p-n junction diode is subjected to reverse biasing :

(a) the barrier height decreases and the depletion region widens.

(b) the barrier height increases and the depletion region widens.

(c) the barrier height decreases and the depletion region shrinks.

(d) the barrier height increases and the depletion region shrinks.

(2024)

8. An electron makes a transition from n = 2 level to n = 1 level in the Bohr model of a hydrogen
atom. Its period of revolution :
(a) increases by 87·5%
(b) decreases by 87·5%
(c) increases by 43·75%
(d) decreases by 43·75%
(2024)
 Case Based Qs (4 - 5 marks)

9. The circuit arrangement for studying the V-I characteristics of a diode, (i.e., the variation of
current as a function of applied voltage) are shown in Fig. (a) and (b).
The battery is connected to the diode through a potentiometer (or rheostat) so that the applied
voltage to the diode can be changed. For different values of voltages, the value of the current is
noted. A graph between 𝑉 and 𝐼 is obtained as in Fig.(c).

Note that in forward bias measurement, we use a milliammeter since the expected current is large
while a microammeter is used in reverse bias to measure the current.

You can see in fig (c) that in forward bias, the current first increases very slowly, almost
negligibly, till the voltage across the diode crosses a certain value. After the characteristic voltage,
the diode current increases significantly (exponentially), even for a very small increase in the
diode bias voltage. This voltage is called the threshold voltage or cut in voltage (0.2 V for
germanium diode and ∼ 0.7 V for silicon diode).

(b)
 (c)

(A) The voltage at which forward bias current increases rapidly is called as:

(a) breakdown voltage

(b) forward voltage

(c) knee voltage

(d) voltage barrier

(B) The resistance of the semiconductor diode in forward bias:

(a) increases

(b) decreases

(c) sometimes increases

(d) none of these

(C) In a 𝑝 − 𝑛 junction the potential barrier is due to the charges on either side of the junction,
these charges are:

(a) majority carriers

(b) minority carriers

(c) both (i) and (ii)

(d) fixed donor and acceptor ions

(D) In an unbiased 𝑝 - 𝑛 junction:

(a) the junction current is due to minority carriers only

 (b) the junction current at equilibrium is zero as equal but opposite carriers are crossing the
junction

(c) the junction current reduces with rise in temperature

(d) the junction current at equilibrium is zero as charges do not cross the junction

(E) From the I-V characteristics shown below, calculate the resistance of the diode at I = 15 mA

(a) 10Ω
(b) 12Ω
(c) 14Ω
(d) 15Ω
[Delhi Gov. SQP 2022]

Very Short & Short Qs (1-3 marks)

10. Draw energy band diagram for an 𝑛-type and 𝑝-type semiconductor at T > 0 K.

[CBSE 2023]
11. Answer the following giving reasons:
(A) A 𝑝 − 𝑛 junction diode is damaged by a strong current.
(B) Impurities are added in intrinsic semiconductors.
[CBSE 2023]

12. (A) Write two differences between 𝑛-type and 𝑝-type semiconductor.
(B) What is depletion region in p − n junction? How does depletion layer act?

[Delhi Gov. SQP 2022]

13. In a pure semiconductor crystal of Si, if antimony is added then what type of extrinsic
semiconductor is obtained. Draw the energy band diagram of this extrinsic semiconductor so
formed.
[CBSE SQP Term-2 2022]

14. The figure shows a piece of pure semiconductor 𝑆 in series with a variable resistor 𝑅 and a source
of constant voltage 𝑉. Should the value of 𝑅 be increased or decreased to keep the reading of the
ammeter constant, when semiconductor 𝑆 is heated? Justify your answer.
 [CBSE SQP 2022]
15. The graph of potential barrier versus width of depletion region for an unbiased diode is shown in
graph A. In comparison to A, graphs 𝐵 and 𝐶 are obtained after biasing the diode in different
ways. Identify the type of biasing in 𝐵 and 𝐶 and justify your answer.
'A'

[CBSE SQP 2022]

16. Name the extrinsic semiconductors formed when a pure germanium is doped with (A) a trivalent
and (B) pentavalent impurity. Draw the energy band diagrams of extrinsic semiconductors so
formed.
[CBSE Term-2022]

17. What is meant by energy band gap in a solid? Draw the energy band diagrams for a conductor, an
insulator and a semiconductor.
[CBSE Term - 2 2022]

18. Give two differences between a half wave rectifier and a full wave rectifier.
[CBSE Term - 2 2022]
19. Answer the following, giving reason:
(A) The resistance of a 𝑝 − 𝑛 junction is low when it is forward biased and it is reversed biased.
(B) Doping of intrinsic semiconductors is a necessity for making electronic devices.
[CBSE Term - 2 2022]
20. How does an increase in doping concentration affect the width of depletion layer of a p-n
junction diode?
[CBSE 2021, 20]

21. In a half wave rectification, what is the output frequency if input frequency is 25 Hz.

[CBSE 2021]
22 The ......., a property of materials C, Si and Ge depends upon the energy gap between their
conduction and valence bands.
[CBSE 2020]

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23. The ability of a junction diode to .......... an alternating voltage, is based on the fact that it allows
current to pass only when it is forward biased.
[CBSE 2020]

24. Draw V-I characteristics of a p-n junction diode. Explain, why the current under reverse bias is
almost independent of the applied voltage up to the critical voltage.
[CBSE 2020]

25. Identify the semiconductor diode whose V-I characteristics are as shown.

[CBSE 2019]

26. In the given fig, is the junction diode forward biased or reverse biased?

[CBSE 2017]

27. Define the terms 'depletion layer' and 'barrier potential' for a 𝑝 − 𝑛 junction. How does (A) an
increase in the doping concentration, and (B) biasing across the junction, affect the width of the
depletion layer?
[CBSE 2017]

28. Write the two processes that take place in the formation of a 𝑝 − 𝑛 junction. Explain with the help
of a diagram, the formation of depletion region and barrier potential in a 𝑝 - 𝑛 junction.
[CBSE 2017]
OR

Explain with the help of the diagram the formation of depletion region and barrier potential in a
𝑝 − 𝑛 junction.

[CBSE 2016]

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 OR
Write briefly the important processes that occur during the formation of 𝑝 − 𝑛 junction. With the
help of necessary diagram, explain the term barrier potential.

[CBSE 2015]

29. Explain with the help of a circuit diagram, the working of a 𝑝 − 𝑛 junction diode as a half-wave
rectifier.
[CBSE 2016, 14]

30. Distinguish between 'intrinsic' and 'extrinsic' semiconductors.

[CBSE 2015]
31. Distinguish between a metal and an insulator on the basis of energy band diagrams.

[CBSE 2014]
32. Draw a plot showing the variation of resistivity of a (i) conductor, and (ii) semiconductor, with
the increase in temperature.
[CBSE 2014]

33. With the help of a circuit diagram, explain the working of a p-n junction diode as a full wave
rectifier. Draw its input and output waveforms.
(2024)
34. Suppose a pure Si crystal has 5 × 1028 atoms m−3 . It is doped by 1 ppm concentration
of boron. Calculate the concentration of holes and electrons, given that ni = 1.5 × 1016 m−3

(2024)

Long Qs (4-5 marks)

35. Explain briefly, with the help of circuit diagram, how V-I characteristics of a 𝑝 − 𝑛 junction diode
are obtained in:
(A) forward bias, and

(B) reverse bias.

Draw the shapes of the characteristic curves obtained.

[CBSE 2018, 14]

Doping and Energy Gap:

36. How does the energy gap of an intrinsic semiconductor effectively change when doped with a (a)
trivalent impurity, and (b) pentavalent impurity ? Justify your answer in each case.

(2024)

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 Class 12 Physics PYQ
Solutions
Chapter-14 : Semiconductor
Electronics
 1. ELECTRONIC DEVICES

1. (b) diffusion of both electrons and holes.

Explanation: The formation of a depletion region in a 𝑝 − 𝑛 junction diode is due to the diffusion of
both electrons and holes.

𝑊ℎ𝑒𝑛 a 𝑝-type material and an 𝑛-type material are brought into contact to form a 𝑝 − 𝑛 junction, the
free electrons from the 𝑛-type material diffuse into the 𝑝-type material, while the holes from the 𝑝-
type material diffuse into the n-type material. This diffusion of carriers creates a region near the
junction where there are no free carriers left. This region is known as the depletion region.

As the diffusion of electrons and holes continues, the depletion region widens and the electric field
across the junction increases. This electric field opposes the further diffusion of carriers and creates a
potential barrier that prevents the flow of current in the reverse direction. The formation of the
depletion region is therefore a result of the diffusion of both electrons and holes across the 𝑝 - 𝑛
junction.

2. (b) 𝐶
Explanation: Energy gap of carbon is maximum; hence, it will require maximum energy to remove an
electron from it.

3. (c) 3.6 × 109 m−3

Explanation: In an extrinsic semiconductor, the number density of electrons or holes can be
significantly increased by adding dopant atoms. For example, adding pentavalent impurities such as
arsenic or phosphorus to a pure semiconductor such as silicon or germanium can increase the number
density of electrons, creating an 𝑛-type semiconductor.
Given that the number density of holes in the extrinsic semiconductor 4 × 1020 m−3 , we can infer
that it is a 𝑝-type semiconductor, where the majority carrier is holes.

The number density of intrinsic carriers,

𝑛𝑖2 = 𝑛𝑒 𝑛ℎ

Where 𝑛𝑒 is the number density of electrons, and 𝑛ℎ is the number density of holes.

Substituting the given values, we get:

(1.2 × 1015 )2 = (4 × 1020 )𝑛𝑒

Solving for 𝑛𝑒 , we get:

𝑛𝑒 = 3.6 × 109 m−3

 4. (c) zero as diffusion and drift currents are equal and opposite.

5. (b) just below the conduction band

Explanation: N-type semiconductor:

(1) An N-type semiconductor is semiconductor material that contains impurities used in electronics.

(2) Pentavalent impurity atoms such as phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), or
another chemical element are used to create 𝑛-type semiconductors.

(3) Donor impurities are impure atoms that donate free electrons to a semiconductor.

(4) Doping increases the amount of change carriers in the material available for conduction.

(5) The conductivity of a 𝑛-type semiconductor is significantly greater than that of pure silicon or
germanium.

(6) The donor energy level of an 𝑛-type semiconductor is immediately below the conduction band,
near the semiconductor's fermi level.

6. (c) If Assertion is true but Reason is false

Explanation: The conductivity of semiconductors is increased by adding an appropriate amount of
suitable impurity or doping. Doping can be done with an impurity which is electron rich or electron
deficient as compared to the intrinsic semiconductor, silicon or germanium. Such impurities
introduce electronic defects in them. When silicon is doped with electron rich impurities the extra
electron becomes delocalized.

7. (b) The barrier height increases and the depletion region widens. (2024)
8. (B) decreased by 87.5%(2024)
9. (A) (c) knee voltage
Explanation: Cut-in voltage or threshold voltage is the forward bias voltage value at which the
forward current increases rapidly.

(B) (b) decreases

Explanation: The semiconductor diode is said to be forward-biased when the external voltage across
it is set up so that the 𝑛-side is linked to the negative terminal of the battery and the 𝑝-side is
connected to the positive terminal. In this instance, the diode's inherent potential diminishes,
narrowing the depletion zone and lowering the barrier's height.

(C) (d) fixed donor and acceptor ions

Explanation: There is a difference in the concentration of charge carriers in the provided junctions in
a 𝑝 − 𝑛 junction. As an electron from the 𝑛-section diffuses into the 𝑝-section, a process known as
electron hole recombination occurs, resulting in the formation of a covalent bond. Between the two

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 portions of the junction, a potential barrier is created by the accumulation of electric charges with
opposing polarities. The fixed acceptor and donor ions on each side of the junction cause the electric
field to create a potential barrier in the junction that prevents further diffusion.

(D) (b) the junction current at equilibrium is zero as equal but opposite carriers are crossing the
junction

Explanation: When the 𝑝 − 𝑛 junction is unbiased, the junction current at equilibrium is zero because
equal, but opposite carriers cross the junction.

(E) (a) 10Ω

Explanation: From the curve, = 20 mA, V = 0.8 V, I = 10 mA when, V = 0.7 V

Δ𝑉
Now, 𝑅 =
Δ𝑙

0.1 V
R=
10 mA
0.1 V
𝑅=
10 × 10−3 𝐴
𝑅 = 10Ω.
10.

11. (A) A 𝑝 − 𝑛 junction diode can be damaged by a strong current due to excessive heating. When a
current flows through the diode, a certain amount of power is dissipated as heat due to the resistance
of the material. If the current is too high, the heat generated may be excessive and cause the junction
to overheat, leading to the breakdown of the semiconductor material or melting of the diode. This can

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 also result in the junction becoming permanently damaged or even destroyed. Another possible
reason for damage could be due to the avalanche effect, where a high voltage can cause a large
number of charge carriers to be generated, leading to a large current flow and possible damage to the
diode.
(B) Impurities are added to intrinsic semiconductors in a process called doping to increase their
electrical conductivity. This is because pure semiconductors have very few free charge carriers
(electrons and holes) to conduct electricity. Doping introduces impurities into the crystal lattice of the
semiconductor, creating additional free charge carriers.

Doping a semiconductor with impurities of 3 valence electrons (such as boron) creates 𝑝-type
semiconductors, where the majority carriers are holes. Doping with impurities of 5 valence electrons
(such as phosphorus) creates 𝑛-type semiconductors, where the majority carriers are electrons. By
controlling the types and concentrations of dopants, the electrical properties of the semiconductor can
be tuned for specific applications, such as in the fabrication of diodes, transistors, and other electronic
devices.

12. (A)

(B) Depletion region or depletion layer is a region in a 𝑝 − 𝑛 junction diode where no mobile charge
carriers are present. Depletion layer acts like a barrier that opposes the flow of electrons from 𝑛-side
and holes from 𝑝-side.

13. As given in the statement antimony is added to pure Si crystal, then a 𝑛 - type extrinsic
semiconductor would be so obtained, Since, antimony (Sb) is a pentavalent impurity.
Energy level diagram of 𝑛-type semiconductor

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14. To keep the reading of ammeter constant value of 𝑅 should be increased, as with the increase in
temperature of a semiconductor, its resistance decreases and current tends to increase.
15. B - reverse biased
In the case of reverse biased diode, the potential barrier becomes higher as the battery further raises
the potential of the 𝑛-side.

C - forward biased

Due to forward bias connection the potential of 𝑃 side is raised and hence the height of the potential
barrier decreases.

16. (A) 𝑝-type extrinsic semconductor is formed on doping a pure germaniun with a trivalent impurity.
Energy band diagram

(B) n-type extrinsic semiconductor is formed on doping pure germanium with a pentavalent impurity.

Energy band diagram

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17. There are many energy bands in solids band theory, but the three most important energy bands in
solids are as follows:
(i) Forbidden Band

(ii) Valence Band

(iii) Conduction Band

Above are energy band diagrams for a conductor, a semiconductor, and an insulator.

Both the valance band and the conduction band overlap in conductors. As a result, a conductor has no
band gap.

In semiconductors, there is a modest band gap of about 1eV.

There is a significant band gap of almost 5eV in an insulator.

18. Two differences are:

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 (1) Centre-tapping of the secondary windings is needed in a full-wave rectifier while no such tapping
is needed in a half-wave rectifier.

(2) For a half-wave rectifier, voltage rectified by each diode (of the total two diodes) is only half the
total secondary voltage while for a full-wave rectifier, the total secondary voltage is rectified.

19 (A) A small increase in forward voltage across 𝑝 − 𝑛 junction shows large increase in forward
voltage
current. Hence, the (resistance = ) of 𝑝 − 𝑛 junction is low when forward biased.
current

A large increase in reverse voltage across 𝑝 − 𝑛 junction shows small increase in reverse current.
Hence the resistance of 𝑝 − 𝑛 junction is high when reverse biased.

(B) Doping is the technique of altering the characteristics of intrinsic semiconductors by adding
impurities. Doping an intrinsic semiconductor increases the concentration of the predominant charge
carrier, allowing it to be used as a 𝑝-type or 𝑛-type semiconductor in a diode.

20. With increase in the rate of doping, width of depletion region generated at the junction decreases.

21. Input frequency = 25 Hz

For a half wave rectification, the output frequency is equal

∴ Output frequency = 25 Hz.

22. The conductivity, a property of materials C, Si and Ge depends upon the energy gap between their
conduction and valence bands.

23 The ability of a junction diode to rectify an alternating voltage is based on the fact that it allows
current to pass only when it is forward biased.

24. V - I characteristics of a p-n junction diode:

As we know, reverse bias reverse current through a junction diode is caused by minority carriers,
which are insufficient at normal temperature. So a finite change in voltage results in a very small
(negligible) change in current, making it appear practically constant.

25 The semiconductor diode is a photodiode.

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26. The junction diode is reverse biased.

27. Formation of depletion layer: When 𝑝 − 𝑛 junction is prepared, electrons from 𝑛-region diffuse into
𝑝-region and holes diffuse from 𝑛 − 𝑝, it leaves behind an ionized donor on 𝑛-side. This ionized
donor (positive charge) is immobile as it is bonded to the surrounding atoms. Thus, due to diffusion
of electrons from 𝑛 − 𝑝, a layer of positive space charge is developed on 𝑛-side of the junction.
Similarly due to diffusion of holes from 𝑝 − 𝑛 a layer of negative space charge on the 𝑝-side of the
junction is developed. This space charge region on either side of the junction together is known as the
"depletion region" or "depletion layer".

Barrier potential: Due to diffusion of holes from 𝑝-region to 𝑛-region and diffusion of electrons in the
reverse direction, part of depletion layer on 𝑛-side of junction becomes positively charged and the
part of depletion layer on 𝑝-type of junction becomes negatively charged. Thus, a junction potential is
developed, which opposes further diffusion of holes/electrons. Hence, this potential acts as a barrier
and is known as "barrier potential" 𝑉B .

(A) The width of the depletion layer decreases on increasing the doping concentration.

(B) In forward biasing arrangement the width of depletion layer decreases but in reverse biasing the
width of depletion layer increases.

28. Two important processes which occur during formation of 𝑝 − 𝑛 junction are diffusion and drift. Due
to the concentration gradient in 𝑝 and 𝑛 sides holes diffuse from 𝑝 to 𝑛 and electrons diffuse from 𝑛
to 𝑝 side. Due to this there is a layer of ionized donor atoms on 𝑛-side having a positive charge and
similarly, a
layer of ionized acceptor ions on 𝑝-side having a negative charge. This region is known as space
charge region.

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 This in turn, produces potential barrier 𝑉𝐵 across the junction which opposes the further diffusion
through the junction. Thus, small region forms in the vicinity of the junction which is depleted of free
charge carrier and has only immobile ions is called the depletion region.

The potential distribution near the 𝑝 − 𝑛 junction is known as a potential barrier.

29. A labelled circuit diagram of a half-wave rectifier is shown in fig.(a). As the supply voltage is an
alternating one, hence the voltage supplied by the secondary of the transformer across terminals 𝐴
and 𝐵 is also alternating. When the voltage at 𝐴 is positive, the diode is forward biased and it
conducts. When 𝐴 is negative, the diode is reverse biased and it does not conduct. Therefore, in the
positive half-cycle of A.C. there is a current through the load resistor 𝑅𝐿 and we get an output
voltage. But during negative half-cycle of A.C. there is no current and hence no output voltage. Thus,
the output voltage is restricted to one direction only and is rectified. Since, the rectified output
waveforms have been shown in fig(b).

(a)

(b)

30.

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31. The following are the distinctions between metals and insulators:
Metals:

1. Metals are naturally occurring substances located beneath the earth's surface.

2. In metals, the conduction band is either completely or partially filled, whereas the valence band is
somewhat empty.

3. Electrons travel from low to high energy levels, where they behave as free electrons.

4. In the case of metals, there is no forbidden gap.

Insulators:

1. Insulators are poor heat and electricity conductors.

2. The valence band is fully filled, whereas the conduction band is only half filled.

3. As a result, there is a significant energy gap.

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32. Showing the plot of the variation of resistivity:
(i) For conductor

(ii) For semiconductors

𝑚
𝜌=
𝑛𝜀 2 𝜏
where, 𝜌 = resistivity.

33.

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 When input voltage at A with respect to the centre tap at any instant is positive, at that instant
voltage at B, being out of phase will be negative, during the positive half cycle diode D1 gets forward
biased and conducts while diode D2 gets reverse biased and does not conduct. Hence during positive
half cycle an output current and output voltage across RL is obtained. During second half of the cycle
when voltage at A becomes negative with respect to centre tap, the voltage at B would be positive
hence D1 would not conduct but D2 would be giving an output current and output voltage. We get
output voltage in both positive and negative half cycles

(2024)
34. ne nh = n2i

nh ≈ 5 × 1022 /m3

n2i
ne = nh

(1.5×1016 )2
ne = 5×1022

ne = 4.5 × 109 /m3

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 nh > ne , it is a p-type crystal

(2024)

35. Working of a 𝑝 − 𝑛 junction diode can be studied in (a) forward bias, and (b) reverse bias
arrangement. To study characteristics of a 𝑝 − 𝑛 junction in these biasing arrangement we proceed as
follows:
(A) Forward bias: In forward bias arrangement 𝑝-side of 𝑝 - 𝑛 junction is connected to +𝑣 terminal
of battery and 𝑛-side to - ve terminal of battery as shown in figure (a). A voltmeter 𝑉 and a
milliammeter 𝑚𝐴 are joined as shown in figure. The voltage applied to 𝑝 − 𝑛 junction can be altered
by using a rheostat with battery.

In forward bias, the current 𝐼𝐹 first increases very slowly till a certain threshold voltage (∼ 0.7 ∨ for
silicon diode) is reached. After the threshold voltage, the diode current increases exponentially even
for a very small increase in the diode bias voltage. The characteristic curve is shown in figure (b).

(a)

(b)
 (B) Reverse bias: In reverse bias arrangement 𝑝-side of 𝑝 − 𝑛 junction is connected to -ve terminal
and 𝑛-side to +ve terminal of battery as shown in figure (a). A voltmeter 𝑉 and 𝑎 microammeter 𝜇A
(since current in reverse bias is extremely small) are also connected as shown. In reverse bias the
battery is capable of providing a voltage of even up to 100 V.

In reverse bias, the current 𝐼𝑅 is very small and almost remains constant with change in reverse bias
voltage 𝑉𝑅 . It is called "reverse saturation current'. However, at very high reverse bias the current
suddenly increases. This voltage is known as the breakdown voltage or zener voltage. The
characteristic curve is shown in figure (b).

(a)

(b)

36. (i) Decreases Justification: An acceptor energy level is formed just above the top of the valence band. (ii)
Decreases Justification: A donor level is formed just below the bottom of conduction band. Alternatively

(2024)