DAV PUBLIC SCHOOL

Jharsuguda

CHAPTERWISE SAMPLE PAPER: SEMICONDUCTOR ELECTRONICS

Class 12 - Physics
Time Allowed: 1 hour and 30 minutes Maximum Marks: 50

Section A
1. Suitable impurities are added to a semiconductor depending upon its use. This is done to [1]

a) increase its electrical resistivity b) enable it to withstand high voltage

c) increase its electrical conductivity d) increase its life

2. The probability of finding an electron in Fermi energy level is: [1]

a) 50% b) 20%

c) 0% d) 100%
3. In n-type semiconductors, majority charge carriers are [1]

a) holes b) protons

c) electrons d) neutrons
4. For forward biasing a p-n junction, the positive terminal of the battery is connected to [1]

a) n-type crystal b) either p-type or n-type crystal

c) p-type crystal d) neither p-type nor n-type crystal

5. In a reverse-biased p-n junction, when the applied bias voltage is equal to the breakdown voltage, then [1]

a) current remains constant while voltage b) voltage remains constant while current
increases sharply increases sharply

c) current and voltage decrease d) current and voltage increase

6. In an n-type semiconductor, the donor energy level lies [1]

a) in the conduction band b) just below the conduction band

c) just above the valance band d) at the center of the energy gap
7. The formation of depletion region in a p-n junction diode is due to [1]

a) movement of dopant atoms b) drift of electrons only

c) diffusion of both electrons and holes d) drift of holes only

8. In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic [1]

carriers is 1.2 × 1015 m-3, the number density of electrons in it is

a) 2.4 × 1010 m-3 b) 3.2 × 1010 m-3

c) 1.8 × 109 m-3 d) 3.6 × 109 m-3

9. The thickness of the depletion layer is of the order of: [1]

1/5
 a) a millimetre b) a micron

c) a picometre d) a nanometre
10. The intrinsic semiconductor becomes an insulator at: [1]

a) -100 C b) 300 K

c) 0 C d) 0 K
11. Assertion (A): In a p-n junction with open ends there is no motion of charge carriers. [1]
Reason (R): In a p-n junction with open ends the electric field is varying.

a) Both A and R are true and R is the correct b) Both A and R are true but R is not the
explanation of A. correct explanation of A.

c) A is true but R is false. d) Both A and R are false.

12. Assertion (A): The forbidden energy gap between the valence and conduction bands is greater in silicon than in [1]
germanium.
Reason (R): Thermal energy produces fewer minority carriers in silicon than in germanium

a) Both A and R are true and R is the correct b) Both A and R are true but R is not the
explanation of A. correct explanation of A.

c) A is true but R is false. d) A is false but R is true.

13. Assertion (A): The direction of diffusion current in a junction diode is from n-region to p-region. [1]
Reason (R): The majority current carriers diffuse from a region of higher concentration to a region of lower
concentration.

a) Both A and R are true and R is the correct b) Both A and R are true but R is not the
explanation of A. correct explanation of A.

c) A is true but R is false. d) A is false but R is true.

14. If in a p-n junction, a square input signal of 10 V is applied as shown, [1]

then the output across RL will be

a) b)

c) d)

15. In the circuit given in the figure, an a.c. source of 200 V is connected through a diode D to a capacitor. The [1]
potential difference across the capacitor will be

2/5
 a) 283 V b) 100 V

c) 310 V d) 200 V
16. In the following figures, which one of the diodes is reverse biased? [1]

a) b)

c) d)

17. The circuit has two oppositely connected ideal diodes in parallel. What is the current flowing in the circuit? [1]

a) 1.33 A b) 1.71 A

c) 2.31 A d) 2.0 A
18. In the following figure, the diodes which are forward biased, are [1]

A.

B.

C.

D.

a) A, C and D b) B and C

c) C and A d) C only
19. In the given Fig., Vo is the potential barrier across a p-n junction, when no battery is connected across the [1]
junction

3/5
 a) 1 corresponds to forward bias and 3 b) 3 corresponds to forward bias of junction
corresponds to reverse bias of junction. and 1 corresponds to reverse bias of
junction

c) 3 and 1 both correspond to reverse bias of d) 1 and 3 both correspond to forward bias of
junction. junction
20. In the energy band diagram of a material as given below, the open circles and filled circles denote holes and [1]
electrons respectively. The material is a/an

a) insulator b) metal

c) p-type semiconductor d) n-type semiconductor

Section B
21. Briefly explain how a potential barrier is set up across a p-n junction as a result of diffusion and drift of the [2]
charge carriers.
22. Why are elemental dopants for Silicon or Germanium is usually chosen from group XIII or group XV? [2]
23. In the following circuits, if the input waveform is as shown in the figure, what will be the output wavefrom, [2]
i. across R in Figure, and

ii. ​across the diode in Figure? Assume that the diode is ideal.

24. Draw the energy band diagram of (i) n-type, and (ii) p-type semiconductors at temperature T > 0 K. [2]
In the case of n-type Si-semiconductor, the donor energy level is slightly below the bottom of conduction band
whereas in p-type semiconductor, the acceptor energy level is slightly above the top of valence band. Explain,
giving examples, what role do these energy levels play in conduction and valence bands.
25. Draw a circuit diagram for the reverse-biased p-n junction diode. Sketch the voltage-current graph for the same. [2]
26. The figure shows the characteristic curve of a junction diode. Determine the d.c. and a.c. resistance of the diode, [2]
when it operates at 0.3 V.

4/5
 Section C
27. Draw the circuit diagram of a full wave rectifier. Explain its working showing its input and output waveforms. [3]
28. a. Explain how a potential barrier is developed in a p-n junction diode. [3]
b. Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot
the V-I characteristics in this case.
29. Distinguish between n-type and p-type semiconductors on the basis of energy band diagrams. [3]
30. Draw the energy band diagrams for conductors, semiconductors and insulators. Which band determines the [3]
electrical conductivity of a solid? How is the electrical conductivity of a semiconductor affected with rise in its
temperature? Explain.
31. With the help of a suitable diagram, explain the formation of depletion region and potential barrier in a p-n [3]
junction. How does its width change when the junction is
i. forward biased and
ii. reverse biased?
OR
Write briefly the two important processes that occur during the formation of p-n junction. With the help of necessary
diagrams, explain the terms depletion region and barrier potential.
32. a. Draw V-I characteristics of a p-n Junction diode. [3]
b. Differentiate between the threshold voltage and the breakdown voltage for a diode.
c. Write the property of a junction diode which makes it suitable for rectification of ac voltages.
OR
Define the terms potential barrier and depletion region for a p-n junction diode. State how the thickness of the
depletion region will change when p-n junction diode is
i. forward biased and
ii. reverse biased

5/5