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    NTE2341_NTEElectronics

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    sorin tica

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    NTE2341_NTEElectronics

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    NTE2341_NTEElectronics

    Uploaded by

    sorin tica

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    © All Rights Reserved
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    of 2

    NTE2341(NPN) & NTE2342 (PNP)

    Silicon Complementary Transistors


    Darlington Driver

    Description:
    The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a
    TO92 type package designed for general purpose, low frequency applications and as relay drivers.

    Absolute Maximum Ratings:


    Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
    Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
    Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
    Total Power Dissipation, Ptot
    TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
    TA = +25°C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
    Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
    Maximum Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W
    Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
    Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm
    x 10mm.

    Electrical Characteristics: (TJ = +25°C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector–EmitterBreakdown Voltage V(BR)CEO IC = 50mA, IB = 0 80 – – V
    Collector–BaseBreakdown Voltage V(BR)CBO IC = 100µA, IB = 0 100 – – V
    Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 5 – – V
    Collector Cutoff Current ICEO VCE = 40V, IB = 0 – – 500 nA
    ICBO VCB = 100V, IE = 0 – – 100 nA
    Emitter Cutoff Current IEBO VCE = 4V, IC = 0 – – 100 nA
    DC Current Gain hFE IC = 150mA, VCE = 10V 1000 – –
    IC = 500mA, VCE = 10V 2000 – –
    Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 0.5mA – – 1.3 V
    IC = 1A, IB = 1mA – – 1.8 V
    Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 1mA, Note 3 – – 2.2 V
    Transition Frequency fT IC = 500mA, VCE = 5V, – 200 – MHz
    f = 100MHz

    NTE2341
    (NPN)
    C .135 (3.45) Min
    B

    .210
    (5.33)
    Max Seating Plane
    E

    .500 .021 (.445) Dia Max


    NTE2342 (12.7)
    (PNP) Min
    C
    B

    E C B
    E
    .100 (2.54)

    .050 (1.27)

    .165
    (4.2)
    Max

    .105 (2.67) Max


    .105 (2.67) Max
    .205 (5.2) Max

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