Chapter-5

Diode circuits and Transistor

 P-N Junction

• Definition: A P-N junction is an interface or a boundary

between two semiconductor material types, namely the p-type
and the n-type, inside a semiconductor.
• Formation of P-N Junction
 Biasing Conditions for the P-N
Junction Diode
• Forward Bias
When the p-type is connected to the battery’s positive terminal and the n-type
to the negative terminal, then the P-N junction is said to be forward-biased.
When the P-N junction is forward biased, the built-in electric field at the P-N
junction and the applied electric field are in opposite directions.
 Reverse Bias
When the p-type is connected to the battery’s negative terminal and the n-
type is connected to the positive side, the P-N junction is reverse biased.
In this case, the built-in electric field and the applied electric field are in
the same direction. When the two fields are added, the resultant electric
field is in the same direction as the built-in electric field, creating a more
resistive, thicker depletion region.
V-I Characteristics of P-N Junction
Diode
 Diode as a Rectifier: Half Wave Rectifier
and Full Wave Rectifier
• The main application of p-n junction diode is in rectification circuits. These
circuits are used to describe the conversion of a.c signals to d.c in power
supplies.

• What Is Half Wave Rectifier?

• During one-half cycles, the diode is forward biased when the input voltage
is applied and in the opposite half cycle, it is reverse biased. During
alternate half-cycles.
• A half wave rectifier circuit consists of three main components
as follows:
• A diode
• A transformer
• A resistive load
 Working of Half wave rectifier

• In this section, let us understand how a half-wave rectifier transforms AC

into DC.
• A high AC voltage is applied to the primary side of the step-down
transformer. The obtained secondary low voltage is applied to the diode.
• The diode is forward biased during the positive half cycle of the AC
voltage and reverse biased during the negative half cycle.
• The final output voltage waveform is as shown in the figure below:
Semiconductor Devices - Zener Diode

• It is a specific type of semiconductor diode, which is made to operate in the

reverse breakdown region.

• The most significant difference in Zener diodes and regular PN junction

diodes is in the mode which they are used in circuits. These diodes are
normally operated only in the reverse bias direction, which implies that the
anode must be connected to the negative side of the voltage source and the
cathode to the positive.
V-I Characteristics of Zener diode
When a reverse voltage is applied
to a Zener voltage, a small reverse
saturation current Io flows across
the diode. This current is due to
thermally generated minority
carriers. As the reverse voltage
increases, at a certain value of
reverse voltage, the reverse current
increases drastically and sharply.
This is an indication that the
breakdown has occurred. We call
this voltage breakdown voltage or
Zener voltage, and Vz denotes it.
 Application of Zener Diode

• Zener diode as a voltage regulator

• Zener diode in over-voltage protection
• Zener diode in clipping circuits
 What is Photodiode?

• A photodiode is a PN-junction diode that consumes light energy to produce

an electric current. They are also called a photo-detector, a light detector,
and a photo-sensor. Photodiodes are designed to work in reverse bias
condition. Typical photodiode materials are Silicon, Germanium and
Indium gallium arsenide.

• Symbol of Photodiode
 Photodiode Working

• A photodiode is subjected to photons in the form of light which affects the

generation of electron-hole pairs. If the energy of the falling photons (hv) is
greater than the energy gap (Eg) of the semiconductor material, electron-
hole pairs are created near the depletion region of the diode.
• The electron-hole pairs created are separated from each other before
recombining due to the electric field of the junction.
• The direction of the electric field in the diode forces the electrons to move
towards the n-side and consequently the holes move towards the p-side.
• As a result of the increase in the number of electrons on the n-side and
holes on the p-side, a rise in the electromotive force is observed. Now when
an external load is connected to the system, a current flow is observed
through it.
 Transistor
• After having a good knowledge on the working of the diode,
which is a single PN junction, let us try to connect two PN
junctions which make a new component called Transistor.
A Transistor is a three terminal semiconductor device that
regulates current or voltage flow and acts as a switch or gate
for signals.
• Why Do We Need Transistors?
• Suppose that you have a FM receiver which grabs the signal
you want. The received signal will obviously be weak due to
the disturbances it would face during its journey. Now if this
signal is read as it is, you cannot get a fair output. Hence we
need to amplify the signal. Amplification means increasing
the signal strength.
Constructional Details and types of a
Transistor
Transistor Biasing

• The proper flow of zero signal collector current and the

maintenance of proper collector emitter voltage during the
passage of signal is known as Transistor Biasing. The circuit
which provides transistor biasing is called as Biasing Circuit.
• Need for DC biasing :
• If appropriate DC voltages and currents are given through BJT
by external sources, so that BJT operates in active region and
superimpose the AC signals to be amplified, then this problem
can be avoided. The given DC voltage and currents are so
chosen that the transistor remains in active region for entire
input AC cycle. Hence DC biasing is needed.
 Methods of Transistor Biasing
• The commonly used methods of transistor biasing are
• Base Resistor method
• Collector to Base bias
• Biasing with Collector feedback resistor
• Voltage-divider bias
 Transistor Configuration

• The three types of configurations are

• Common Base,
• Common Emitter
• Common Collector
 Common Base Configuration
• The name itself implies that the Base terminal is taken as common terminal for both input and
output of the transistor. The common base connection for both NPN and PNP transistors is as
shown in the following figure.
• The variation of emitter current(IE) with Base-Emitter voltage(VBE), keeping Collector Base
voltage(VCB) constant. Input Characteristics
 Output characteristics
• The variation of collector current(IC) with Collector-Base voltage(VCB), keeping the
emitter current(IE) constant
 Current Transfer Characteristics
• The variation of collector current(IC) with the emitter current(IE), keeping Collector Base
voltage(VCB) constant.
• The resulting current gain has a value less than 1.
 Common Emitter CE Configuration
• The name itself implies that the Emitter terminal is taken as common
terminal for both input and output of the transistor. The common emitter
connection for both NPN and PNP transistors is as shown in the following
figure.
Input Characteristics
 Output characteristics-CE
• The variation of collector current(IC) with Collector-Emitter voltage(VCE), keeping the base current(IB) constant.
•
 Current transfer characteristics
• The variation of collector current(IC) with the base current(IB), keeping Collector-
Emitter voltage(VCE) constant.
• The resulting current gain has a value greater than 1.
Common Collector configuration
 CC configuration characteristics
• Input Characteristics
• The variation of emitter current(IB) with Collector-Base voltage(VCB),
keeping Collector emitter voltage(VCE) constant.
• Output Characteristics
• The variation of emitter current(IE) with Collector-Emitter voltage(VCE), keeping
the base current(IB) constant . Current Transfer Characteristics
Thank you