2SC5053

Transistors

Medium power transistor (50V, 1A)

2SC5053

zFeatures zExternal dimensions (Unit : mm)

1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / MPT3
IB = 500mA/ 50mA 4.5

0.5
1.6 1.5

2) PC=2W (on 40×40×0.7mm ceramic board)

3) Complements the 2SA1900

2.5
4.0
(1) (2) (3)

1.0
0.4
0.4 0.5 0.4
1.5 1.5
(1)Base 3.0

(2)Collector
(3)Emitter

z Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO −60 V
Collector-emitter voltage VCEO −50 V
Emitter- base voltage VEBO −5 V
−1 A
Collector current IC
−2 A (Pulse) ∗1
0.5 W
Collector power dissipation PC
2 W ∗2
Collector power dissipation Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Single pulse Pw=100ms, Duty=1/2
∗2 When mounted on a 40 40 0.7mm seramic board.
+
+

zExternal dimensions (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −60 − − V IC = −50µA
Collector-emitter breakdown voltage BVCEO −50 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE = −50µA
Collector cutoff current ICBO − − −0.1 µA VCB = −40V
Emitter cutoff current IEBO − − −0.5 µA VEB = −4V
Collector-emitter saturation voltage VCE(sat) − − −0.4 V IC/IB = −500mA/−50mA
DC current transfer ratio hFE 120 − 270 − VCE/IC = −3V/−0.5A
Transition frequency fT − 150 − MHz VCE = −5V , IE = 50mA , f=100MHz
Output capacitance Cob − 20 − pF VCB = −10V , IE = 0A , f=1MHz

zPackaging specifications and hFE

Type 2SC5053
Package MPT3
hFE QR
Marking CG ∗
Code T100
Basic ordering unit (pleces) 1000
∗ Denotes hFE

Rev.A 1/2
 2SC5053
Transistors
zElectric characteristics curves
1000

COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)

1000 1000
9mA A Ta=25°C Ta=25°C
10mA 8m 7mA IC/IB=10
900 500 500
6mA
COLLECTOR CURRENT : IC (mA)

800 5mA

DC CURRENT GAIN : hFE

200 VCE=3V 200
700 4mA 100
100
600 50
50
3mA
500
20 20
400 2mA
10 10
300
5 5
IB=1mA
200
2 2
100
1 1
0 1m 10m 100m 1 2
0 1 2 3 4 5 0.001 0.005 0.02 0.05 0.1 0.2 0.5 1 2
0.002 0.01
COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.1 Grounded emitter output characteristics Fig.2 DC current gain Fig.3 Collector-emitter saturation voltage
vs. collector current vs.collector current

1000 Ta=25°C 5
COLLECTOR OUTPUT CAPACITANCE : Cob( (pF)

Ta=25°C 200
VCE=5V f=1MHz
TRANSITION FREQUENCY : fT (MHz)

500 IE=0A IC Max. (Pulse ∗)

COLLECTOR CURRENT : IC (A)

2
100 10ms
200 100ms
1
50
100
0.5
50 20
0.2 DC
20 10
0.1
10 5
0.05
5
2
0.02 Ta=25°C
2 ∗Single

1 1 0.01 nonrepeatitive pulse

0.1 0.2 0.5 1 2 5 10 20
−1m −10m −0.1 −1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : ICE (V)
EMITTER CURRENT : IE (A)

Fig.4 Gain bandwith product Fig.5 Collector output capacitance Fig.6 Safe operating area
vs. emitter current vs. collector-base voltage

Rev.A 2/2
Appendix

Notes
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1