Energy

conduction band
(free electron)
C
>
- .
B mini

↓
~
.

DEg >
- Forbidden
energy gap
.

>
- NaB ) may
.

alence band
(Bound electrons
X
-
① 105 to 10
Conductivity

② Resistivity

③ Tempcoot C :
the
<= C= -
ver
(4) R4
-4 =
+ ↑ = R↓

becomes Insulator
Fermienergy :
-
- It is the maximum
energy
powered free electron at
by
absolute temp .

(-273') or OK

Fermi electron : - The electron having maximum

-

Kinetic at OK is
energy
↑ las fermi electron .

#energy
level : -

(Mathematical oriented def)

-
-

It is defined as that
energy
level in semi conductor b/w

where
V .
B S C .

B .

probability of occupancy
of free electron is half

·
---------
F E .
. L -
 conductor :
of Extrinsic semi
im

Fe = MeCAVe
72 =
nee Ave
Vet driftepeed of C .

Va = driftspeed of
holes
Nee Me
.

Te :

-2 = NeeMe
 t E e
O -
ol e V

u
the of N
→
[ b-
the form
bet % ] neo ✓
Ole new
level]
a
-

holes
forms
a
level

N°11 -

p types
-

N type both
-

are Neutral
.

C. atom is
added S
atom is
·
atom is
neutral )

.
 \

֥
P type N type
-

/
_ c- B.

- - -
- - - - - -

v. ☐

↓
, , ,

mm , mm ,
µ, , µ.am ,
↓
it can donate electrons
available
-
i. at cettor energy level ↓
it donate elation
near to the V -

it can
to c- B
accept
.

so

the electrons . C- :c -

BIT free
election aidté )
↓
u if near to

the CB

P type
- .
N -

type

•
✓
⊖ ⊖ ⊖
⊖
0
O
0
O

↓
0
O

/ / he
⊕
-
⊕ ⑤
-
-

> na
① fixed ⑦ fixed
free
.

Fons
'

holes .
Tons .
free electrons .

released )
Chr > ne)
Recombination (
energy
ten form of
p →
on
N
heat or photon

⊖ ⊖ ⊖ ⊕
◦

% g- ⊕ I -

O O O °
-
⊕ ⊕

Diffusion of e- C due to concentration ditt ) .

From N P
then-uyent.co N)
→ →

7- e

Diffusion of hole → From P → N .

In Cp → N]

Net current =
Ieoh
(P→N)
 ←EE .

lk
-8 : °

⊖
⊕
⊖ : ⊕
⊖ : ⊕

*fixed d Ions
bond to
depletion C- : fixed in

not di thine
layer
.

make
but it can

E- F- )

@ terminal )
-
-

device
 width of 1-
✗
① dep layer
.

topping

② Dep layer ✗ Temp .

③ Dep eager
. act as
dielectric in capacitor .

⑨ H diffusion current
<pµ- majority e-

→
minority ( é)
← current
drift

at state
steady
.

Indw
 P N
+

✓
b → ↓
ii. dep layer
.
↓

P¥it= * ,÷,
.

!÷÷÷¥:÷T
↓
* lesion layer

srmb°IT⊕ /-1>1-7
→ T-dittum.in

Ñ
~ Negligible .

] 7- diffusion >> I drift

→

¥ dmaiw current
 ↑

µ
EnEn=Eewᵗp<← n_ layer → ↑

:¥÷E÷w
÷

1- Vpn
#

*
ʳmb"T⊖
=
-¥-t
1-
→

"
R
7-drift >> Iditfu .

↓ ↓
Neglect
main
F- ext ←

✓
iE¥8_ right ñ

hole " No recombination

lettn → almost zero current
→ High resistance
.
 EEEEEEI-n-EEE.ee
.

!
""
Severse

!
C
+Drift current

Break!µ%ge

se

Uofele*-
y

current Cmiliamp,
I (
forward
↓
^ ¥ ¥ tano

!
-
= _

"
" "" "
current slope =

Fg www..am
.
,

If m↑ R↓
reverse voltage in very large

¥g
and it provide emcees
energy
to minority charge carrier .

and minority electrons collide

kneevᵗ!
with boo valance band electrons
and free to it and Diode
voltage
g.ua, gangway .

V|! ?
ater
✓
batt

this
=
V
barrier
✓
bat >
V
barrier
s i increases .
 EEEEERE.EE : -

:j=T r = electrical
conductivity .

¥=eE/ ( meme named

t→ #
+

• e
( names )
=
neue +

✓
net
Resistivity f- _

±
Ve =
Drift speed of electrons .

Uh
Me
=

=
_

number
of
derity of free electrons
holes e- -

e¥e+nÑ
men = -
of holes .

Extra
I=Ta-Ie R→ Resistance
7- Ie + 7- a
G conductance
1,2
=
=

I =
@ e-
e. Are ) Knee Ava )
I = EA [ me 've + na Ven -

] f → Reeietivity

{
conductivity
¥
.

Ma
↓
-_Y÷ i Me
L
-

mobility of
holes
mobility g- election .

✓= I 12 V=F!
① (
)
I
en-fneueF-tna.ua ]
'

.E
7- =

↓
7¥
¢-1 ¥
I = e. A F- [ nelle + name ]

[ meme ]
E.
v-
¥ = e. F- + name

F- =
f
j = e. F- [ meme + named
←
current density .

F- = j p → } = E

j=
EEE .
-

-
 areectifier- !

Do

·
-

I
F+R
Exam
=
-
.

=
Irms =

Zo
 Bit

Rectifier
*

So
·
Dr
D2
&
Breakdown -
,

Electric find I
↓

due to E .
F. election gains more
energy and it break covalent

bond and large number

oftree elections are genrated. Diod behave

as conductor.

Avalance Break down !-

~
 break
I I R
down
=
C- 14 ✗ R↓

To maintain the V

T-ncreaxe.IS
Zener diode

Rdecrease .

=
-

_
=
E#
L'

P≈iFm
_:H¥¥ \
,
"
=

a=%÷☐
^

when a free election recombine with

the hole ,
it
may fall from
higher energy level to
ground
state and relaxed
energy
photon in
by appear the

form light
g. energy
.
 Solar cell : A p-n junction 1dL light
-

diode which convert

light energy into electrical

P / ~

f-
is called solar cell
energy
.

These
cells are
widely wed
in Greet eights satellite etc
,

Itt

It consist
of a metal layer
f-bateey
1%7
( silver copper) and layer of →
or

am•B
.

semiconductor connected
by
a twin tranitarent film .
I

when falls
transparent
eight on the

film , this causes a

① Tf R=cs 1=0
potential difference aeron a •

hence VAB =E open Ckt

lager and current
voltage
flow's
.

② Tf 12=0 Replace by
plane wire .

±
* ,
,
VAB = ◦
( due to wire )

7- =
Eg Chart Ckt current )

¥÷ n
0kt
voltage
open
→

7-
to short current
% ckt

E-