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Mosfet

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Rahul Kumar
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31 views13 pages

Mosfet

Uploaded by

Rahul Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Types of Transistors

MOSFET (Types)

● Four types:
• n-channel enhancement mode
• Most common since it is cheapest to manufacture
• p-channel enhancement mode
• n-channel depletion mode
• p-channel depletion mode

n-channel p-channel n-channel p-channel


Depletion type Enhancement type
FET = Field-Effect Transistor MOSFET
A four terminal device (gate, source, drain,
bulk)

Symbols of
MOSFET
MOSFET characteristics

● Basically low voltage device. High voltage


device are available up to 600V but with limited
current. Can be paralleled quite easily for higher
current capability.
● Internal (dynamic) resistance between drain and
source during on state, RDS(ON), , limits the
power handling capability of MOSFET. High
losses especially for high voltage device due to
RDS(ON) .
● Dominant in high frequency application
(>100kHz). Biggest application is in switched-
mode power supplies.
● The transistor consists of three regions, labeled the
``source'', the ``gate'' and the ``drain''.
● The area labeled as the gate region is actually a
``sandwich'' consisting of the underlying substrate
material, which is a single crystal of semiconductor
material (usually silicon); a thin insulating layer
(usually silicon dioxide); and an upper metal layer.
● Electrical charge, or current, can flow from the
source to the drain depending on the charge applied
to the gate region.
● The semiconductor material in the source and drain
region are ``doped'' with a different type of material
than in the region under the gate, so an NPN or PNP
type structure exists between the source and drain
region of a MOSFET.
•Most important device in digital design

•Very good as a switch

•Relatively few parasitics

•Rather low power consumption

•High integration density

•Simple manufacturing

•Economical for large complex circuits


n-Channel MOSFET
NMOS Structure

● MOS (Metal-Oxide-Semiconductor) Nowadays gate is made of poly-silicon


Channel length L and width W
In most digital design, L is set at the minimum feature size
W is selectable by the designer
Bulk is connected to the Gnd in NMOS to prevent forward-biased PN junction

On Off state
state
n-MOSFET Characteristics

Plots V-I characteristics


of the device for various
Gate voltages (VGS)

At a constant value of VDS , we can


also see that IDS is a function of the
Gate voltage, VGS
The transistor begins to conduct
when the Gate voltage, VGS , reaches
the Threshold voltage: VT
PMOS Structure

● PMOS transistor has a negative threshold voltage (Vtp) -0.3v~-1.2v


● A pMOS turns on when Vgs<Vtp
P-MOSFET Characteristics

The terminal characteristics of the device are given by


drain-to-source current Ids against drain-to-source
voltage Vds for different values of gate-to-source
voltage Vgs. All voltages are referenced with respect
to the source voltage, which is assumed to be at
ground potential.
Switch models of MOSFETs

g=0 g=1

d d d
nMOS g OFF
ON
s s s

d d d

pMOS g OFF
ON
s s s
Thank You

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