Exp No-2
Exp No-2
ON
ELECTRONICS ENGINEERING LAB
(ELE-309)
2nd year 3rd semester
Compiled by
SILLI POLYTECHNIC
[ESTD by govt. of Jharkhand run and managed by techno india under ppp]
Syllabus
3. Study of Rectifiers (Half wave & Full wave) & Filters (Capacitor & Inductor filter)
5. Characteristics of FET
6. Characteristics of UJT
Aim of the experiment: To observe and draw the V-I characteristics of a Zener diode.
Apparatus Required:
2 Resistors 1
4 Bread Board 1
Theory: A zener diode is heavily doped p-n junction diode, specially made to operate in the break down
region. A p-n junction diode normally does not conduct when reverse biased. But if the reverse bias is
increased, at a particular voltage it starts conducting heavily. This voltage is called Break down Voltage.
High current through the diode can permanently damage the device
To avoid high current, we connect a resistor in series with zener diode. Once the diode starts conducting
it maintains almost constant voltage across the terminals whatever may be the current through it, i.e., it
has very low dynamic resistance. It is used in voltage regulators.
Circuit Diagram:
V-I Characteristics:
(i) Forward Bias
Procedure:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Reverse Bias
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
V-I Characteristics:
Precautions:
1. While doing the experiment do not exceed the ratings of the zener diode. This may lead to damage
the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections as per the
circuit diagram.
Result: The V-I characteristics of a zener diode in both forward bias and reverse bias are observed.
Conclusion: