DDR5 :

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Comparision of technologies :

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Memory Wall problem :
Core count increasing rapidly , Memory BW also increasing , but memory BW/core is constant.

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Bandwidth, bandwidth and Bandwidth :

DDR5 is the fifth-generation DDR, and the feature enhancements from DDR4 to DDR5 are the
greatest yet. While previous generations focused on reducing power consumption and many factors ,
DDR5’s primary driver has been the need for more bandwidth.

Current data rate 6400 MT/s , and can be stressed upto 8400 MT/s.

 DDR5-4000 (PC5-32000)

 DDR5-4400 (PC5-35200)

 DDR5-4800 (PC5-38400)

 DDR5-5200 (PC5-41600)

 DDR5-5600 (PC5-44800)

 DDR5-6000 (PC5-48000)

 DDR5-6200 (PC5-49600)

 DDR5-6400 (PC5-51200)

 DDR5-6800 (PC5-54400)

 DDR5-7200 (PC5-57600)

 DDR5-7600 (PC5-60800)
  DDR5-8000 (PC5-64000)

 DDR5-8400 (PC5-67200)

DDR3 and DDR4 have an 8n prefetch architecture, meaning they fetch 8 times the internal
data bus width (e.g., 64 bytes per burst for a 64-bit bus width).

Processor and Cache Requirements:

 The prefetch buffer must align with the data block size used by caches (e.g., 64-byte
cache lines).
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Terminologies :

Packages
SIMM single data path between the
module and the mainboard
DIMM two data paths between the
module and the mainboard
Small Outline DIMM more compact design than the
"usual" DIMMs
Load reduced DIMM central component of the
LRDIMMs is an isolation
memory buffer (iMB
Registered DIMM central component of the
RDIMMs is an register buffer

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Performance : Adjusted to typical cache size ie 64B of data

DDR5 DIMMs feature two 40-bit (32 bits plus ECC) independent channels. When combined with a
new default burst length of 16 (BL16) in the DDR5 component, this allows a single burst to access
64B of data (the typical CPU cache line size) using only one of the independent channels, or only half
of the DIMM
Detailed comparison bw DDR4 and DDR5
Additional DDR5 Features

 PMIC (Power Management Integrated Circuit): DDR5 modules have an onboard PMIC for
improved power delivery, which is also reflected in the pinout with specific power-related
pins.

 Differential Command/Address signaling: DDR5 uses differential signaling for the

command/address bus, improving signal integrity compared to DDR4.

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Functional Validation Test Case List – ST Ericsson
Functional Description of DDR Interface :
--------------------------------------------------------------------------------------------------------------------------------------

DDR5 pinout assignment

A typical DDR5 DIMM has 288 pins, just like DDR4, but the pin functions are different

 Power pins: Supply power to the module.

 Ground pins: Provide grounding for the module.

 Command/Address pins: Carry command and address information to the memory.

 Data pins: Transfer data between the memory and the system.

 Control pins: Used for control signals, including clock and reset signals.

 Miscellaneous pins: Include things like the serial presence detect (SPD), temperature sensors, and
other special functions.

Pin Group Description

Power Pins VDD, VDDQ, VPP, VREFDQ, VREFCA, VTT, etc.

Ground Pins GND

Pin Group Description

Address Pins A[16:0], BA[1:0], BG[1:0], and ACT

Command Pins CKE, ODT, CS#, WE#, CAS#, RAS#

Data Pins DQ[71:0] (Data lines), DQS, DM, DBI, ECC, etc.

Clock Pins CK, CK# (Differential clock signals)

Control Pins ALERT#, RESET#, RST#

Miscellaneous Pins SPD, SCL, SDA (I²C Interface), TEMP Sensor

DDR5 reset and initialization procedure

Key Steps in DDR5 Reset and Initialization

1. Power-Up Sequence

VDD, VDDQ, VPP are brought to operational levels.

Clock (CK) begins toggling.

Command/address bus is idle.

2. Reset Sequence

Assert RESET# (LOW) to reset the DRAM and PMIC.

Release RESET# (HIGH) after minimum tPW_RESET time.

3. Initialization of PMIC

PMIC stabilizes power delivery.

4. ZQ Calibration

Perform ZQCL calibration for proper termination and drive strength.

5. Mode Register Programming

Configure MR0–MR15 to set operational parameters.

6. Write Leveling and Data Bus Training

Align DQS with CK using write leveling.

Train data lanes for both reads and writes.

7. Read and Write Training

Further refine the synchronization of read and write paths

 8. Final Initialization Complete

DDR5 module is ready for normal read and write operations

Detailed explaination :

1. Power-Up Sequence

The power-up sequence ensures that the DDR5 DIMM is supplied with the correct voltages before
any other processes begin. DDR5 has a more complex power delivery system, including the onboard
PMIC.

 VDD (Core Voltage): This powers the DRAM core.

 VDDQ (I/O Voltage): This powers the I/O pins for data and command/address signals.

 VPP (Pump Voltage): Required for internal row activation circuits.

For DDR5, the PMIC manages the power sequencing, distributing the required voltages to the DRAM
dies. The power-up sequence typically follows these steps:

1. VDD and VDDQ rise simultaneously to their operating levels.

2. VPP is powered on to its required voltage level.

3. The clock (CK, CK#) begins toggling.

4. The command/address (CA) bus is stable and idles at a predefined level.

2. Reset Sequence

The memory controller initiates the reset sequence by asserting the RESET# pin. The DDR5 module
needs to be reset properly to ensure that the internal state is cleared before any configuration or
operation begins.

 RESET# is driven LOW to reset the DDR5 DRAM and PMIC.

 After a reset, the module stays in an idle state where it awaits further initialization
commands.

 RESET# is released (set HIGH) after the minimum required time (tPW_RESET).

3. Initialization of PMIC

DDR5 introduces a Power Management Integrated Circuit (PMIC) on the DIMM, responsible for
regulating the power supply to various parts of the module. After the reset, the PMIC begins its
initialization:

 The PMIC brings up the necessary power rails (VDD, VDDQ, and VPP) for DRAM operation.

 The PMIC may perform voltage calibration and ensure all power domains are stable before
allowing the memory initialization to continue.

4. ZQ Calibration
ZQ calibration is necessary to set the proper drive strength and termination values for the I/O pins.
This ensures that the electrical characteristics of the memory bus are correctly configured.

 The ZQ pin is used to initiate the ZQ calibration.

 The memory controller issues a ZQCL (ZQ Calibration Long) command to the DDR5 module,
which performs a long calibration process.

 The calibration adjusts the on-die termination (ODT) and drive strength to match the
system’s electrical environment.

5. Mode Register Programming (MR)

The memory controller programs various mode registers (MRs) to configure the operational
parameters of the DDR5 module. This step is essential for setting the timing parameters, burst
lengths, data bus width, etc.

 The memory controller issues a Mode Register Set (MRS) command to the DDR5 module.

 MR0–MR15 are the mode registers that control different features, such as:

o Burst length (BL16 for DDR5).

o CAS latency, CAS Write Latency (CWL), and other timing parameters.

o Write Recovery, Read-to-Precharge, and other timing values.

o ODT configuration.

o Error Correction Code (ECC) settings (if supported).

6. Write Leveling and Data Bus Training

DDR5 memory introduces Write Leveling and Data Bus Training to synchronize the clock signal with
the data strobe (DQS) signals. This step ensures proper alignment between the memory controller
and the DRAM for reliable data transmission.

 Write Leveling: Ensures that the DQS and clock signals are aligned for each DRAM device on
the memory module. The memory controller sends a Write Leveling Command and adjusts
the timing to ensure synchronization.

 Data Bus Training: This involves training the data lanes (DQ) for read and write operations to
ensure that the data is correctly transmitted and received without errors. This can include:

o Write Training: Aligns the DQ signals with the clock (CK).

o Read Training: Ensures the memory controller can correctly capture data from the
DRAM.

7. Read and Write Training

Once basic data bus training is complete, additional read and write leveling is performed to ensure
that all lanes are fully synchronized for optimal performance.

 Read Training: Aligns the incoming data signals (DQ) with the data strobe (DQS) and clock
signals. This is necessary because different DQ lines may have slightly different delays due to
signal integrity issues.
  Write Training: Ensures that the data sent to the DDR5 module arrives correctly aligned with
the DQS signals for reliable data capture.

This step is critical for ensuring proper timing at the higher data rates supported by DDR5.

8. Final Initialization Complete

Once the above steps are completed, the DDR5 module is ready for normal operation. The memory
controller will perform a final check to ensure that all initialization processes are successful.

 The memory controller may issue NOP (No Operation) commands during this phase to allow
timing synchronization and signal settling.

 After all the training and calibration are complete, the DDR5 module can begin handling read
and write commands as per normal operation.

Key Differences from DDR4 Initialization

 PMIC Integration: DDR5 includes the PMIC on the DIMM, which requires an additional
initialization step compared to DDR4.

 Higher Burst Length: DDR5 has a burst length of 16, double that of DDR4, which is accounted
for during mode register programming.

 More Training Steps: Due to the increased complexity of signaling and higher data rates,
DDR5 requires more extensive training of the data bus and command/address lines than
DDR4.

DDR5 Mode Registers:

DDR5 Mode Registers (MRs) play a crucial role in configuring and controlling various operational
parameters of the DDR5 memory module. These mode registers (MR0 to MR15) are programmed by
the memory controller during the initialization process and can be updated dynamically during
operation. Each register controls specific features such as timing, data burst length, termination, and
error correction.

Overview of DDR5 Mode Registers (MR0–MR15)

 MR0–MR3: Basic memory configuration, timing settings, and operational features.

 MR4–MR6: Advanced memory features like on-die termination (ODT) and signal calibration.

 MR7–MR15: Additional settings for fine-tuning performance, such as refresh controls, Error
Correction Code (ECC) configurations, and various features related to signal integrity.

Here’s a detailed look at each of these mode registers:

Mode Register Details

MR0 (Mode Register 0) Controls fundamental operational settings like burst length, CAS
 latency, and write recovery time.
 Burst Length (BL): Sets the data burst length. DDR5 typically
uses BL16 as the default burst length.
 CAS Latency (CL): Specifies the column access latency, which
is the number of clock cycles between the issue of a read
command and when the data becomes available.
 Write Recovery (WR): Determines the number of cycles
required between a write command and the next command
(precharge).

MR1 (Mode Register 1) Handles additional operational timing and control parameters.
 Drive Strength and ODT: Controls the on-die termination
(ODT) settings, including the strength of the termination
resistance.
 DLL Enable/Disable: Controls the delay-locked loop (DLL)
functionality, which is used for synchronizing clock signals.
 Additive Latency (AL): Specifies extra latency added to CAS
latency to improve timing flexibility.

MR2 (Mode Register 2) Provides finer control over timing parameters such as CAS Write
Latency (CWL) and temperature-related features.
 CAS Write Latency (CWL): Specifies the delay between the
write command and when data is written to the memory.
 Self-Refresh Temperature Range (SRT): Configures the
temperature range at which self-refresh can be applied.
 Fine Granularity Refresh (FGR): Adjusts refresh rate settings
to accommodate different power or performance
requirements.

MR3 (Mode Register 3) Contains settings related to command and address bus training.
 Write Leveling Enable: Enables or disables write leveling, a
procedure to align data strobe (DQS) with the clock signal
(CK).
 Data Bus Inversion (DBI): Allows the use of DBI, which helps
reduce power consumption and improve signal integrity by
inverting data patterns when needed.

MR4 (Mode Register 4) Controls features related to error reporting and timing optimization.
 Error Correction Code (ECC) Enable: Configures the use of
ECC for detecting and correcting data errors.
 ODT On/Off: Additional on-die termination controls, including
fine-tuning for dynamic termination settings.
 Read Preamble and Postamble: Adjusts the preamble (time
before data transfer) and postamble (time after data transfer)
for improved data integrity.

MR5 (Mode Register 5) Includes various control functions for power management and
performance tuning.
 Read/Write Command Latency: Fine-tunes the latency for
read and write commands.
 Dynamic ODT: Enables or configures dynamic ODT, which
 adjusts the termination based on the command issued to the
memory.
 CA Training: Controls address and command bus training
procedures to ensure signal synchronization.

MR6 (Mode Register 6) Contains settings for further ODT and data bus-related features.
 VrefDQ Training: Configures the data reference voltage
training to optimize signal margins and improve stability.
 ZQ Calibration: Controls the ZQ calibration, which adjusts the
I/O impedance to ensure signal integrity.
 ODT for Read/Write: Additional settings for ODT during read
and write operations.

MR7 (Mode Register 7) Primarily controls refresh mechanisms and training-related settings.
 Refresh Mode Selection: Configures the refresh mode, which
determines how often the memory cells are refreshed to
retain data.
 Internal Vref Calibration: Configures internal reference
voltage calibration for improved signal integrity.
 Data Mask (DM): Enables or disables the use of data masking
during write operations to selectively modify data.

MR8 (Mode Register 8) Provides advanced settings for timing control and signal integrity
features.
 Read Latency Adjustment: Fine-tunes the latency between
the read command and when the data is available.
 Write Latency Adjustment: Fine-tunes the latency between
the write command and when the data is written to the
memory.
 Read/Write Preamble: Fine-tunes the timing for preamble
periods for better signal synchronization.

MR9 (Mode Register 9) Controls advanced power-saving features and additional refresh
options.
 Temperature Compensated Self-Refresh (TCSR): Adjusts the
self-refresh rate based on the current temperature to save
power.
 Fine Granularity Refresh Enable: Fine-tunes the refresh
timing to balance power and performance.
 Self-Refresh Abort (SRA): Enables aborting self-refresh during
critical system conditions.

MR10 (Mode Register 10) Provides configuration options for the command/address bus and
additional training procedures.
 Command/Address Training: Controls training sequences to
ensure that the command and address signals are properly
synchronized with the memory controller.
 ZQ Calibration Initiation: Allows manual initiation of ZQ
calibration to adjust termination settings.

MR11 (Mode Register 11) Primarily used for timing and voltage-related configuration.
  VDD Voltage Level: Configures the voltage level for the
memory core.
 Command Latency: Fine-tunes the latency for specific
commands based on system requirements.
 Clock Cycles for Refresh: Adjusts the number of clock cycles
required to complete a refresh operation.

MR12 (Mode Register 12)

MR13 (Mode Register 13)

MR14 (Mode Register 14)

MR15 (Mode Register 15)

Key Features Managed by Mode Registers

 Timing and Latency Control: Parameters like CAS Latency (CL), CAS Write Latency (CWL),
Write Recovery (WR), and Additive Latency (AL) are configured via mode registers.

 On-Die Termination (ODT): ODT settings help ensure signal integrity by controlling
termination resistance.

 Burst Length: DDR5 uses a default burst length of 16 (BL16), which is configured in the mode
registers.

 Error Correction Code (ECC): ECC settings control whether error detection and correction are
enabled and how they operate.

 Power Management: Fine granularity refresh, self-refresh temperature range, and other
power-saving features are configured to optimize power consumption.
DDR5 Command Descriptions and Operations:
DDR5 commands and operations are critical for managing how the memory controller interacts with
the DRAM to perform tasks like reading, writing, refreshing, and configuring the memory module.

Each command is initiated by the memory controller over the command/address (CA) bus and is
followed by specific timing sequences to complete the operation.

Overview of DDR5 Commands

 Active (ACT) Command: Activates a row in a bank.

 Read (RD) Command: Initiates a read from the DRAM.

 Write (WR) Command: Initiates a write to the DRAM.

 Precharge (PRE) Command: Closes a row in a bank.

 Refresh (REF) Command: Refreshes the contents of the memory.

 Self-Refresh (SREF) Command: Puts the DRAM into a low-power state.

 ZQ Calibration (ZQCL) Command: Initiates impedance calibration.

 Mode Register Set (MRS) Command: Programs the mode registers.

 Power-Down (PD) Command: Reduces power by putting the DRAM in a low-power state.
1. Active (ACT) Command

The Active (ACT) command opens a specific row in a given bank for read or write operations. Before
any read or write commands can be issued to a bank, the memory controller must activate a row in
that bank.

 Inputs: Row address, bank address, bank group.

 Operation: The selected row is moved into the bank's sense amplifiers, which makes it
accessible for subsequent read or write operations.

 Timing Parameter: tRCD (Row-to-Column Delay) – the time between the ACT command and
the following READ or WRITE command.

2. Read (RD) Command

The Read (RD) command retrieves data from the DRAM. It specifies the column address and initiates
data transfer from the DRAM to the memory controller. The data is read from the sense amplifiers of
the active row.

 Inputs: Column address, bank address, bank group, burst length (BL).

 Operation: Data is sent out on the data bus after the specified CAS Latency (CL) cycles.
  Burst Length: DDR5 has a default burst length of 16 (BL16), meaning data is transferred in
bursts of 16 units (128 bits for each read operation).

 Timing Parameters:

o CAS Latency (CL): The number of clock cycles between the RD command and when
data is available.

o tRTP (Read-to-Precharge): The minimum time between a READ and a subsequent

PRECHARGE command.

3. Write (WR) Command

The Write (WR) command sends data from the memory controller to the DRAM. Similar to the READ
command, it targets a specific column within the active row of a bank.

 Inputs: Column address, bank address, bank group, data, burst length (BL).

 Operation: Data is written into the DRAM’s sense amplifiers and stored in the active row.

 Burst Length: The default burst length is BL16, meaning 128 bits of data are written per
command.

 Timing Parameters:

o Write Recovery Time (tWR): The time required after a write operation before a
PRECHARGE command can be issued.

o tCWL (CAS Write Latency): The delay from the WR command to when data is
transferred from the memory controller to the DRAM.

4. Precharge (PRE) Command

The Precharge (PRE) command closes the currently open row in a bank, preparing the bank for
another row activation or a refresh operation. If a row is not precharged before activating a new row,
it could cause a row conflict and increase latency.

 Inputs: Bank address, bank group, row address.

 Operation: The active row in the specified bank is closed, and its data is stored back into the
DRAM cells.

 Timing Parameter: tRP (Row Precharge Time) – the time required between a PRE command
and the next ACT command in the same bank.

5. Refresh (REF) Command

The Refresh (REF) command refreshes the contents of the DRAM cells to prevent data loss, as DRAM
cells leak charge over time.

 Types of Refresh:

o Auto-Refresh (REF): Automatically refreshes a row at regular intervals.

o Self-Refresh (SREF): A low-power refresh mode used when the system is in a low-
power state.
  Timing Parameters:

o tRFC (Refresh Cycle Time): The time required to complete a refresh operation.

o tREFI (Refresh Interval): The interval at which refresh commands must be issued to
ensure data retention.

6. Self-Refresh (SREF) Command

The Self-Refresh (SREF) command puts the DRAM into a low-power state while maintaining the
refresh operations internally to preserve data.

 Operation: The DRAM continues to refresh its memory cells internally without needing
commands from the memory controller.

 Power Saving: This mode is typically used when the system is idle or in a low-power state,
reducing power consumption while maintaining data integrity.

7. ZQ Calibration (ZQCL) Command

The ZQ Calibration (ZQCL) command adjusts the DRAM's on-die termination (ODT) and drive
strength to compensate for voltage and temperature changes. This ensures reliable data
transmission over the memory bus.

 Operation: The ZQ pin is used to perform a calibration, and the command is issued to update
the I/O impedance settings.

 Types of Calibration:

o ZQCL (ZQ Calibration Long): A longer calibration procedure that occurs during
initialization.

o ZQCS (ZQ Calibration Short): A shorter calibration that is performed periodically

during normal operation.

8. Mode Register Set (MRS) Command

The Mode Register Set (MRS) command programs various mode registers in the DDR5 DRAM. These
registers control the memory’s operation, such as burst length, CAS latency, and ODT settings.

 Inputs: Mode register address, data for the register.

 Operation: The memory controller programs the desired operational settings into the DDR5
module’s mode registers.

 Common Mode Registers:

o MR0: Controls burst length, CAS latency, and write recovery time.

o MR1–MR15: Control various features like on-die termination (ODT), ECC, and power-
saving features.

9. Power-Down (PD) Command

The Power-Down (PD) command reduces power consumption by putting the DRAM into a power-
saving state while no read or write operations are taking place.
  Operation: Non-essential parts of the DRAM are powered down, but no refresh operations
are performed, unlike in the Self-Refresh state.

 Power-Down Types:

o Active Power-Down: The DRAM is still able to respond quickly to commands but
consumes less power.

o Precharge Power-Down: The DRAM is in a precharged state but consumes less

power.

Burst Operation - burst length , burst type , burst order

burst length, burst type, and burst order are key components that define how data is transferred
between the memory controller and the DRAM. These factors influence the memory's performance,
efficiency, and behavior during read and write operations.

1. Burst Length (BL) in DDR5

Burst Length (BL) refers to the number of data transfers that occur in a single burst. In DDR5, the
burst length is fixed and set to BL16.

 BL16 means that 16 data transfers occur for each read or write command issued by the
memory controller.

2. Burst Type (BT) in DDR5

Burst Type (BT) defines the order in which data is accessed within a burst. The burst type in DDR5
can be either sequential or interleaved, similar to previous DDR generations.

 Sequential Burst (BT = 0): Data is accessed in a continuous, linear order. For a burst of 16
data units, data is transferred in order: 0, 1, 2, 3, ... 15.

 Interleaved Burst (BT = 1): Data is accessed in a non-sequential pattern where the middle of
the burst is transferred first, followed by alternating high and low data addresses.

3. Burst Order in DDR5

The burst order refers to how data is physically transferred from the memory. DDR5 defines burst
order based on the burst type chosen (sequential or interleaved). In general, burst order determines
which data unit comes first, second, third, etc., during the burst process.

This burst architecture enables DDR5 to achieve high data transfer rates, greater power efficiency,
and better flexibility for various types of workloads and system architectures.

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Special Features that help DDR5 to come up with such performance :

1. The 2-cycle command cancellation

The 2-cycle command cancellation feature in DDR5 allows the memory controller to cancel or
override a command within two clock cycles of its issuance. This capability improves memory
efficiency and flexibility, particularly in scenarios where scheduling errors or changes in priority might
occur during memory operations. DDR5 introduces this feature to mitigate delays or conflicts caused
by issuing a command that needs to be revoked.

2. The Multi-Purpose Command (MPC)

The Multi-Purpose Command (MPC) in DDR5 adds significant versatility by handling a variety of non-
data memory operations, such as calibration, training, and status monitoring, all within a single
command structure. This feature improves system efficiency, reduces command overhead, and
enhances performance and reliability by enabling real-time adjustments to memory operation and
signal integrity.

3. 2N Mode / Gear down mode

2N Mode plays a more critical role due to the much higher data rates and the increased complexity
of managing signals over the command/address bus. As DDR5 can reach speeds beyond 6000 MT/s,
the need for relaxed timing (like 2N Mode) becomes more pronounced compared to previous DDR
generations like DDR4 or DDR3, where the standard 1N Mode could be sufficient for most operations
at lower speeds.

In summary, 2N Mode is a timing mechanism in DDR5 (and earlier DDR technologies) that relaxes the
timing constraints on the command bus, improving stability at the cost of slightly higher latency and
reduced command throughput. It is especially useful for high-speed and high-capacity memory
configurations where signal integrity and noise are more difficult to manage.

4. Multi-tap decision feedback equalizer (DFE)

One of these is the addition of equalization in the form of a multi-tap decision feedback equalizer
(DFE) in the DQ receivers. The DFE mitigates the effects of inter-symbol interference (ISI) at the
higher rates by opening up the data eyes inside the device.

5. New and improved training modes

New and improved training modes, including a new read preamble training mode, command and
address training mode, chip select training mode, and a write leveling training mode

6. Duty cycle adjuster (DCA) circuit

Duty cycle adjuster (DCA) circuit capable of adjusting both the DQ and DQS duty cycles for the read
path internally. This helps to correct the small duty cycle distortions that occur naturally as those
signals pass through the devices and PCB, ultimately optimizing the duty cycles for the DQ and DQS
signals received by the controller.
 7. Data Bus Inversion (DBI)

Data Bus Inversion (DBI) is a feature that helps reduce the overall power consumption on the data
bus and improve signal integrity by limiting the number of simultaneous bit transitions.

 How DBI Works: If more than half of the bits in a data transfer would change from low to
high (or high to low), the system inverts the entire data transfer and asserts the DBI signal.
This reduces the number of switching bits, which in turn reduces power consumption and
electromagnetic interference (EMI).

 Power Savings: Fewer bit transitions result in lower power consumption, which is significant
when operating at high data rates.

8. DDR5 On-Die ECC (Error-Correcting Code)

DDR5 On-Die ECC (Error-Correcting Code) is one of the significant innovations introduced with the
DDR5 memory standard. On-Die ECC is designed to enhance the reliability of data stored within the
DRAM chips themselves, ensuring that errors that occur inside the chip can be detected and
corrected before the data is sent to the memory controller or external systems

 Internal to the DRAM Chip: On-Die ECC operates within the DRAM, handling errors that occur as
data is stored and retrieved inside the chip, before that data is sent to the memory controller.

 Focus on Single-Bit Errors: On-Die ECC primarily corrects single-bit errors, which are the most
common types of memory errors caused by phenomena such as electrical noise, cosmic rays, or
process variations.

9. on-die temperature sensors

 On-die temperature sensors are integrated into DDR5 DRAM modules for
continuous real-time thermal monitoring.
 Accurate temperature readings help the system adjust memory performance and
protect against overheating through dynamic scaling, throttling, and adaptive refresh
rates.
 System integration via SMBus allows temperature data to be shared with the
memory controller or system thermal management, ensuring coordinated cooling
strategies.
 Programmable temperature thresholds and alerts can trigger system responses to
prevent overheating in high-performance or thermally constrained environments.
 Critical in high-performance systems, such as servers, data centers, and gaming
setups, ensuring both reliability and maximum performance under varying thermal
conditions.

DDR5’s on-die temperature sensors play a crucial role in improving memory stability,
performance, and efficiency, particularly as memory speeds and densities continue to
increase.
Addressing :

If you are accessing a particular location in a DDR5 DIMM, the memory

controller would issue the following:

 Rank: Selects the appropriate rank (using CS#).

 Bank Group: Determines which bank group to access (using BG[1:0]).
 Bank: Selects the bank within the bank group (using BA[1:0]).
 Row: Specifies the row within the selected bank (using A[16:0]).
 Column: Specifies the column within the selected row (using column address bits).

Key Innovations in DDR5 Addressing:

 Increased Bank Groups: DDR5 doubles the number of bank groups compared to DDR4,
improving parallelism and memory access efficiency.
 Dual Channel per DIMM: Each DDR5 DIMM has two independent 40-bit channels, reducing
latency and increasing bandwidth.
 Burst Length of 16: DDR5 uses a burst length of 16, ensuring more data is transferred per
memory access, improving data transfer rates.
 On-Die ECC (Error Correction Code): DDR5 introduces on-die ECC, helping to detect and
correct errors during memory operations, making addressing more reliable.
DDR5's enhanced addressing mechanisms, higher bank group count, and
support for more addressable memory allow it to achieve greater
performance and efficiency

Key Functions of a DRAM Controller

1. Address Mapping:
o Converts the logical address provided by the processor into a physical address
format suitable for DRAM (row, column, bank, and rank).
2. Command Sequencing:
o Issues appropriate DRAM commands such as:
 Activate (ACT): Opens a specific row in a bank for access.
  Read (RD): Reads data from the activated row.
 Write (WR): Writes data to the activated row.
 Precharge (PRE): Closes a row after access.
3. Timing Management:
o Ensures compliance with DRAM timing parameters like:
 RAS (Row Access Strobe): Time between activating a row and accessing it.
 CAS (Column Access Strobe): Time to access a specific column.
 tRCD, tRP, tRC: Various row and column cycle times.
4. Data Buffering:
o Buffers data from the processor to handle differences in speed between the CPU and
DRAM.
5. Refresh Management:
o Periodically refreshes DRAM cells to prevent data loss due to charge leakage,
adhering to the refresh interval requirements.
6. Error Detection and Correction (Optional):
o Implements error correction techniques like ECC (Error-Correcting Code) to detect
and fix errors in data.
7. Power Management:
o Puts DRAM into low-power modes (e.g., self-refresh, power-down) when idle to
conserve energy.
8. Arbitration and Prioritization:
o Handles simultaneous access requests from multiple masters (e.g., CPU, GPU, DMA)
by scheduling and prioritizing them.