Gunn Diode
Gunn Diode
THEORY:
neqptial difotiul
afutad Condutuity abuud in codaia Quk
semiconducte Auiy Codutn hand minins
satelik eteys in the dnngy - nematum (ti) kiagtam
Rut can ercome
n
diole i ulke the disdes hit t
cruids oly of n-dd semicmducor
nt mtoil. (3 condute in loath diec
tns and camot ekt altentny
cwne
Bome &eees wie he tem
Qiade.
0. 097
2
3 Do 268
0325
Veltye V
(n V)
acrey lel unn diode
5 0.356
0.324
0.305
O.292
0. 280
o. 269
(2 Oo257
|2" O.249
KesuLT:
Afuorinte valueof thalel
TNrERENcE:
35b+
.3254
250
14
X
PakT-): e-ahau ReuoMant fauquen cy f luan osclaton
PROCEDURE:
1 Bias the luna diske t any waltays in dh NDR apony
manas ebseud
tue set of olervtions.
4. Caloulite dle
hut he distawe heteew t e succisine maumas s
oy he
-
(a)
(A)
OesvATerS CaLcLATeNS:
Wauyite brad limein, a = Q.5cmm
de da 5cm.
(2-38tm
dy 2 - = 2x 43 Con
-3.4tcm
52
*fau remnt
ranant frgnys
QA1724 58 Xlo°ms
Q1797 Cm
'deuice.
Cvent
siane giony (aR) eeitance dientinl heyatie
he in hias isdide lun hwhen cktaid
LNFERENCE:
GH068 l0. =
egillutor relonant
freg space tnu
Cm
064 -S.
KsULrs: