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6 views10 pages

CH 04

Uploaded by

hossain.zihad06
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INTRODUCTION TO VLSI

CSE412

MOSFET
Lecture
4

TANVIR AHMED
ASSISTANT PROFESSOR, CSE DEPARTMENT
MANARAT INTERNATIONAL UNIVERSITY
LECTURE CONTENT

➢ Introduction to MOSFET
➢ Types of MOSFET
➢ Structure of n channel MOSFET
➢ Operation of a MOSFET
➢ Operating regions of MOSFET
MOSFET

➢ MOSFET: Metal Oxide


Semiconductor Field Effect
Transistor.
➢ Can work as switch and
amplifier.
➢ It has mainly 3 terminals:
Source, Drain and Gate.
➢ An additional terminal called
Substrate is not normally used
as either an input or an output
connection but instead it is
used for grounding the
substrate.
➢ Usually in discrete type
MOSFETs, this substrate lead
is connected internally to the
source terminal.
➢ It is a voltage controlled
device.
TYPES OF MOSFET

2 types based on channel:

1. Enhancement type: It
has no conducting
channel region at zero
gate bias voltage.

2. Depletion type: It has


conducting channel
region at zero gate
bias voltage.
STRUCTURE OF MOSFET (N CHANNEL ENHANCEMENT)

➢ Normally, n-type diffusion


is made in a p-type silicon
substate.
➢ A layer of silica (SiO2) is
coated above the surface.
➢ Source and Drain terminal
are brought out from
diffusion area through
metal contact.
➢ Gate is brought out from
silica layer.
➢ SiO2 layer works as an
insulation between gate
and substrate while source
and drain terminal are
connected to n regions.
OPERATION OF MOSFET (N CHANNEL ENHANCEMENT)

➢ The n doped terminal


connected to positive
terminal of the
battery is said to be
reverse biased and
called drain.
➢ The n doped terminal
connected to negative
terminal of the
battery is said to be
forward biased and
called drain.
OPERATION OF MOSFET (CON’T)

➢ No significant current
pass from drain to
source as no channel
exist. Only a tiny
current can flow due
to minority carrier.
OPERATION OF MOSFET (CON’T)

➢ If a positive voltage is
applied at the gate
terminal, due to
electrostatic
attraction, minority
carriers (electrons) of
p substrate will
accumulate near gate
terminal, thus create
a channel between
source and drain.
➢ The higher the
voltage, the higher
the width of the
channel.
OPERATION OF MOSFET (CON’T)

➢ The minimum level of


positive gate voltage for
which current starts to
flow from drain to
source through the
created channel, is
termed as the threshold
voltage (Vt or Vth)

➢ If VG < Vt, MOSFET off


mode.
➢ If VG > Vt, MOSFET on
mode.
➢ Thus, it can work as a
gate-controlled
switching device.
MOSFET OPERATING REGION

1. Cut-off Region:
When VGS < Vthreshold the gate-source voltage is
much lower than the transistors threshold
voltage so the MOSFET transistor is switched
“fully-OFF” thus, ID = 0, with the transistor
acting like an open switch.

2. Linear (Ohmic) Region:


When VGS > Vthreshold and VDS < VGS -Vthreshold
the transistor is in its constant resistance
region behaving as a voltage-controlled
resistance whose resistive value is determined
by the gate voltage, VGS level.

3. Saturation Region:
When VGS > Vthreshold and VDS > VGS -Vthreshold
the transistor is in its constant current region
and is therefore “fully-ON”. The Drain
current ID = Maximum with the transistor
acting as a closed switch.

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