Basic Electronics

Unit 5
Thyristors and Other Devices
 Thyristor

• A thyristor is a three-junction (J1, J2, J3), Four layer of alternating P-type and N-
type materials (PNPN) Semiconductor device, which has an Anode, Cathode, and
Gate (three terminals). It typically has three electrodes: an anode, a cathode, and
a gate (the control electrode). The silicon-controlled rectifier (SCR) is the most
prevalent type of thyristor. The primary function of a thyristor is to control electric
power and current by acting as a switch. A small current on its gate terminal
controls the larger current of the anode-to-cathode path. For such a small and
lightweight component, it offers adequate protection to circuits with large voltages
and currents.
•
The most common type of thyristor is the silicon-controlled rectifier (SCR
Thyristor). When the cathode is negatively charged relative to the anode, no
current flows until a pulse is applied to the gate. Then, the SCR conducts current
until the voltage between the cathode and anode is reversed or reduced below a
certain threshold or holding value. Using this type of thyristor, large amounts
of power can be switched or controlled using a small triggering current or voltage.
• A thyristor is the most important type of power semiconductor device.They are
mostly used in power electronic circuits. They are operated as bi-stable switches
from non-conducting to conducting state. Thyristors are high-speed electronic
switches that can be used to replace electromechanical relays in many circuits as
they have no moving parts, no contact arcing, or suffer from corrosion or dirt. But
in addition to simply switching large currents “ON” and “OFF”, thyristors can be
made to control the mean value of an AC load current without dissipating large
amounts of power.
Symbol Of Thyristor
 Construction of Thyristor

• A thyristor is a four-layer semiconductor device, consisting of alternating P-type

and N-type materials (PNPN). A thyristor usually has three terminals- an anode, a
cathode, and a gate, also known as a control electrode.
• Thyristors have three terminals: an anode, a cathode, and a gate.
• Thyristors are four-layer semiconductors with alternating P-type and N-type
materials.
• Thyristor has three junctions- J1, J2, and J3, in which J1 and J3 will be forward
biased and J2 will be reversed biased in the Forward Conduction mode of the
Thyristor.
• The 4-layer diode is a type of thyristor that acts something like an ordinary diode
but conducts in the forward direction only after a certain anode to cathode voltage
called the forward-breakover voltage is reached.
• The 4-layer diode has two terminals, labeled the anode (A) and the cathode (K).
• The symbol reminds you that it acts like a diode. It does not conduct when it is
reverse-biased.
• The SCR had its roots in the 4-layer diode. By adding a gate connection, the SCR
could be triggered into conduction. The SCR is the most widely used thyristor. It
can switch very large currents on and off.
 Thyristor Working

• A Thyristor works as an electronic switch due to its high power switching

characteristics
• Thyristors operate in one of the following three states, depending on the
requirements:
• Thyristor consists of four layers(PNPN or NPNP) three terminals A(Anode),
K(Cathode), and G(Gate), and three junctions J1, J2, and J3.
• In thyristors, there are three junctions J1, J2, and J3.
• In the operation of thyristor, these junctions play a very important role.
• Depending on whether the junctions are forward-biased or reverse-biased, the
thyristor will either conduct the current or will not be conducted. For the thyristor
to conduct current, all three junctions must be forward-biased. If any one of the
junctions is reverse biased the thyristor will not conduct any current and hence
acts as an open switch.
 Mode Of Operation

• Reverse blocking mode– In this mode of operation, the diode will block the
voltage which is applied. In this case, the junctions J1 and J3 are reverse biased,
whereas J2 is forward biased. Hence, the thyristor does not conduct and acts as an
open switch.
• Forward blocking mode– In this mode, the voltage applied in a direction makes a
diode to conduct. In this case, junction J2 is reverse biased, whereas junctions J1
and J3 are forward biased, again due to which the thyristor does not conduct and
acts as an open switch.
• Forward conducting mode– The thyristor has triggered and current will flow
through the device until the forward current reaches below the threshold value
which is known as “Holding current”. In this mode of operation, all the three
junctions will be forward bias
V-I Characteristics of Thyristor
• Region 1
• When the positive terminal of the supply is connected to cathode and the negative
terminal is connected to anode with the gate circuit open then the thyristor
operates in Region 1. In this region junctions J1 and J3 become reverse biased,
whereas junction J2 becomes forward biased.
• Region 2
• When the positive terminal of the supply is connected to anode and the negative
terminal is connected to the cathode with the gate circuit open then the thyristor
operates in Region 2. In this region junction J1 and J3 become forward biased,
whereas junction J2 gets reverse biased.
• Region 3
• When the positive terminal of the supply is connected to the anode and the
negative terminal to the cathode with the gate circuit closed the operates in
Region 3. In this region, all the three junctions (J1, J2, and J3) act as Forward
biased
 Types of Thyristor

• Silicon controlled thyristor or SCRs

• Gate turn off thyristors or GTO thyristor
• Integrated gate commutated Thyristors or IGCTs
• MOS turn off thyristors or MTOs
• Bidirectional phase controlled thyristors or BCTs
• Reverse conducting thyristors or RCTs
• Light-activated silicon controlled rectifiers or LASCRs
• FET controlled thyristors or FET-CTHs
• Fast-switching thyristors or SCRs
• Bidirectional Triode Thyristors or TRIACs
 Silicon Controlled Rectifier (SCR)

• Silicon Controlled Rectifier (SCR) is one of the most commonly used thyristors, This
also belongs to Thyristor family. They are high-speed semiconductor switching
devices. They are similar to Shockley diodes but with an extra terminal. The chosen
material for the construction of the SCR is silicon. SCR works like a silicon rectifier
diode with an anode and a cathode.
• The anode is the positive terminal and the cathode is the negative terminal of the
SCR. It has four layers of alternating P and N-type material. It also has an additional
control terminal called the gate. The presence of the gate allows the SCR to be
triggered into conduction. It is a unidirectional device that allows the current to
only flow when in one direction and opposes the flow in the opposite direction.
 SCR Apllications

• Silicon-Controlled Rectifiers (SCRs) are used in many applications that require high-
power control, such as:
• Inverters: SCRs are used as solid-state switches to convert DC power to a stepped
waveform output.
•
• Light dimming: SCRs are used to control the brightness of lights.
•
• Motor control: SCRs are used to control large industrial motors.
•
• Regulators: SCRs are used in regulators that require medium to high voltage AC
power management.
•
• Phase controlled rectification: SCRs are used to regulate the output voltage of
diode rectifiers.
 Unijunction Transistor (UJT)

• A Unijunction Transistor (UJT) is a three-terminal semiconductor device that has a

unique switching behavior. It consists of a bar of lightly doped N-type
semiconductor material with a P-type semiconductor region in the center, acting
as a voltage-sensitive gate. UJTs are often used in triggering applications, such as in
oscillators, pulse generators, and thyristor triggering circuits.
 IGBT

• IGBT Full Form in electronics is an Insulated Gate Bipolar Transister. It is a power

transistor that combines an input MOS and an output bipolar transistor. IGBT
terminals - IGBT is a three-terminal device. The three terminals are Gate (G),
Emitter (E), and Collector (C).
• IGBT is a voltage-controlled device.
• IGBT Working
• When a positive voltage is applied between the gate-to-emitter terminals of an
IGBT, it allows the flow of both majority and minority charge carriers during its
operation. Here are the simplified working steps:
• The application of a positive voltage between gate-emitter terminals forms an
inversion layer near the surface channel region under the dielectric layer.
• This inversion layer provides low resistance paths for both holes and electrons to
flow between emitter and collector terminals.
• The inverted P- region under the gate now allows electron flow from the emitter
to the collector like in a MOSFET.
• Simultaneously, the built-in PNP transistor formed by P+, N-drift, and P-body
regions inject holes into the N-drift region.
• Movement of both holes and electrons reduces the resistance of the drift region,
enhancing current flow from collector to emitter.
 Phototransistor

• A Phototransistor is an electronic switching and current amplification component

which relies on exposure to light to operate. When light falls on the junction,
reverse current flows which are proportional to the luminance. Phototransistors
are used extensively to detect light pulses and convert them into digital electrical
signals. These are operated by light rather than electric current. Providing a large
amount of gain, low cost and these phototransistors might be used in numerous
applications.
• Phototransistors are transistors with the base terminal exposed. Instead of sending
current into the base, the photons from striking light activate the transistor. This is
because a phototransistor is made of a bipolar semiconductor and focuses on the
energy that is passed through it. These are activated by light particles and are used
in virtually all electronic devices that depend on light in some way. All silicon
photosensors (phototransistors) respond to the entire visible radiation range as
well as to infrared. In fact, all diodes, transistors, Darlington’s, TRIACs, etc. have the
same basic radiation frequency response.
• The structure of the phototransistor is specifically optimized for photo
applications. Compared to a normal transistor, a phototransistor has a larger base
and collector width and is made using diffusion or ion implantation.
 Light Activated Silicon – Controlled Rectifier
(LASCR)
• LASCR is a type of SCR that is triggered using a light source such as an LED. It
consists of three terminals the cathode, anode, and gate. A trigger current is
initiated through a light source when the photon particles hit the junction to
produce electron-hole pairs. This trigger current is supplied to the LASCR which
activates the gate terminal and hence current flows through the device. This also
aids in the prevention of electrical noise disturbances from being generated. The
power circuit and the light source circuit are electrically isolated by the LASCR.
 Main Differences Between Diode and Thyristor

• A diode is a two-layer device having a p and and n region. While a thyristor is a

four-layer semiconductor device formed by alternate arrangement of p and n type
material.
• Due to two layers in diode, a single junction is exist in case of diode. Whereas due
to 4 layers, the thyristor has 3 junctions.
• A diode is a two terminal device namely anode and cathode. But a thyristor is a
three terminal device, out of the three terminal, 2 are anode and cathode while
the other is gate which is used to provide external triggering to the circuit.
• The power handling ability of thyristors is comparatively better than the diodes.
• Diodes exhibit a low operating voltage nearly about 5000 V. While, the operating
voltage is around 7000 V in case of thyristors which is comparatively higher than
diodes.
Difference Between Thyristor and Transistor