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H.W 4 - Solution

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21 views3 pages

H.W 4 - Solution

Uploaded by

24mattew
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We take content rights seriously. If you suspect this is your content, claim it here.
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[EE 362(B)] HW#4_Solution

1. For a typically doped Si npn transistor, sketch the energy band diagram, electrostatic
potential, electric field, and charge density inside the device as a function of position under
active mode biasing.
Sol) Under active mode biasing in the npn transistor VBE > 0 and VBC < 0.

Following the usual procedures in interpreting the energy band diagram to deduce the
electrostatic variables.
2. Given a pnp BJT where 𝐼Ep = 1 mA, 𝐼En = 0.01 mA, 𝐼Cp = 0.98 mA, and 𝐼Cn = 0.1 𝜇A,
calculate:
Sol)
𝐼 0.98 mA
(a) 𝛼T = 𝐼Cp = = 𝟎. 𝟗𝟖𝟎𝟎
Ep 1 mA

𝐼Ep 1 mA
(b) 𝛾=𝐼 = 1 mA+0.01 mA = 𝟎. 𝟗𝟗𝟎𝟏
Ep +𝐼En

(c) 𝐼E = 𝐼Ep + 𝐼En = 1 mA + 0.01 mA = 𝟏. 𝟎𝟏 𝐦𝐀

𝐼C = 𝐼Cp + 𝐼Cn = 0.98 mA + 0.1 𝜇A = 𝟎. 𝟗𝟖𝟎𝟏 𝐦𝐀

𝐼B = 𝐼E − 𝐼C = 1.01 mA − 0.9801 mA = 𝟐𝟗. 𝟗 𝝁𝐀


(d) 𝛼dc = 𝛾𝛼T = 𝟎. 𝟗𝟕𝟎𝟑
𝛼 0.9703
𝛽dc = 1−𝛼dc = 1−0.9703 = 𝟑𝟐. 𝟕
dc

(e) 𝐼CB0 = 𝐼Cn = 𝟎. 𝟏 𝝁𝐀


𝐼CB0 0.1 𝜇A
𝐼CE0 = = = 𝟑. 𝟑𝟕 𝝁𝐀
1−𝛼dc 1−0.9703

(f) 𝐼Cp is increased to a value closer to 1 mA while all other current components remain fixed.
What effect does the 𝐼Cp increase have on 𝛽dc ? Explain

Sol) The 𝐼Cp increase while 𝐼Ep remains fixed indicates that the base transport factor has
been improved. An increase in 𝛼T in turn leads to an increase in 𝛼dc = 𝛾𝛼T and therefore to
an increase in 𝜷𝐝𝐜 .

(g) 𝐼En is increased while all other current components remain fixed. What effect does the 𝐼En
increase have on 𝛽dc ? Explain.
Sol) An increase in 𝐼En while 𝐼Ep remains fixed indicates that the emitter efficiency has been
degraded. A decrease in 𝛾 in turn leads to a decrease in 𝛼dc = 𝛾𝛼T and therefore to a
decrease in 𝜷𝐝𝐜 .

3. The equilibrium majority and minority carrier concentrations in the quasineutral regions of
a BJT are shown as dashed lines in Figs. 4-3 (a) and (b), respectively. These figures are intended
to be linear plots, with a break in the 𝑥-axis depletion regions to accommodate the different
depletion widths associated with the various biasing modes. Note that the carrier concentrations
in the three transistor regions are not drawn to the proper relative scale, but only qualitatively
reflect the fact that 𝑁E ≫ 𝑁B > 𝑁C . Employing solid lines and remembering the figures are
intended to be linear plots, sketch the majority and minority carrier distributions in the
respective quasineutral regions of the 𝑊 ≪ 𝐿B transistor under.
Sol) Majority carriers…Assuming low-level injection, the majority carrier concentrations will
be essentially unperturbed from their equilibrium values in all cases. Thus, the majority carrier
sketches will all be the same, with the solid carrier-distribution lines lying on top of the dashed
equilibrium values in the three device regions.

Majority Carrier Concentrations (all parts)

Minority Carriers… With 𝑊 ≪ 𝐿B , the minority carrier concentration will vary linearly with
position in the base under all biasing conditions. In the emitter and collector regions the carrier
concentrations will decay exponentially with distance from the edges of the respective E-B and
C-B depletion regions. The carrier concentrations will be greater than the equilibrium values
when the applied biases are positive and less than the equilibrium values when the applied
biases are negative. The distributions are concluded to be of the general form pictured below.
Note that 𝑝B (𝑥) in the base is approximately zero everywhere under cutoff biasing if |𝑉EB |
and |𝑉CB | are greater than a few 𝑘𝑇/𝑞 volts

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