Solution: [EE 362(B)] Semiconductor Devices, Final Exam

2021.06.14
Prof. Hee Chul Lee
Common parameters
𝜀𝜀𝑆𝑆𝑆𝑆 = 11.7, 𝜀𝜀𝑆𝑆𝑆𝑆𝑆𝑆2 = 3.9, 𝜀𝜀0 = 8.85 × 10−14 F⁄cm, 𝐸𝐸𝑔𝑔 = 1.12 eV, k = 8.62 × 10−5 eV⁄K,

𝑛𝑛𝑖𝑖 = 1.5 × 1010 cm−3 , 𝑉𝑉𝑡𝑡 = kT⁄𝑒𝑒 = 0.0259 Volts at RT, e = 1.6 × 10−19 C,
𝑁𝑁𝑐𝑐 (Si) = 2.8 × 1019 cm−3 , 𝑁𝑁𝑣𝑣 (Si) = 1.04 × 1019 cm−3

1. Complete the following table making use of the ideal-structure C-V characteristic and energy band
diagrams in Fig. 1. For each of the biasing conditions named in the table, employ letters (a-e) to identify
the corresponding bias point on the ideal MOS-C C-V characteristic. Likewise, use a number of (1-5) to
identify the band diagram associated with each of the biasing conditions. (15)
Bias Condition Capacitance (a-e) Band Diagram (1-5)

Inversion e 4
Depletion c 3
Flat band b 1
𝑉𝑉𝐺𝐺 = 𝑉𝑉𝑇𝑇 d 2
Accumulation a 5

Fig. 1

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2. Figure 2 is a dimensioned energy band diagram for an ideal MOS-C operated at 𝐓𝐓 = 𝟑𝟑𝟑𝟑𝟑𝟑 𝐊𝐊 with
𝑽𝑽𝑮𝑮 ≠ 𝟎𝟎. Note that 𝑬𝑬𝑭𝑭 = 𝑬𝑬𝒊𝒊 at the Si-SiO2 interface. Answer the following questions (20)

Fig. 2

(a) 𝝓𝝓𝒇𝒇𝒇𝒇 =?

(b) 𝝓𝝓𝑺𝑺 =?
(c) 𝑽𝑽𝐆𝐆 =?
(d) Draw the block charge diagram corresponding to the state pictured in the energy band diagram. For
reference purposes, include the maximum equilibrium depletion width, 𝑾𝑾𝑻𝑻 , on your diagram.
(e) Sketch the general shape of the low-frequency C-V characteristic to be expected from the given MOS-
C. Place an × on the C-V characteristic at a point that roughly corresponds to the state pictured in the
energy band diagram.
Sol)

(a) 𝜙𝜙𝑓𝑓𝑓𝑓 = (1⁄𝑞𝑞 )[𝐸𝐸𝑖𝑖 (𝑏𝑏𝑏𝑏𝑏𝑏𝑏𝑏) − 𝐸𝐸𝐹𝐹 ] = 0.3𝑉𝑉

(b) 𝜙𝜙𝑆𝑆 = (1⁄𝑞𝑞 )[𝐸𝐸𝑖𝑖 (𝑏𝑏𝑏𝑏𝑏𝑏𝑏𝑏) − 𝐸𝐸𝑖𝑖 (𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠)] = 𝜙𝜙𝐹𝐹 = 0.3𝑉𝑉

(c) 𝐸𝐸𝐹𝐹 (𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚) − 𝐸𝐸𝐹𝐹 (𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠) = −𝑞𝑞𝑉𝑉𝐺𝐺

V𝐺𝐺 = �1�𝑞𝑞 �[−𝐸𝐸𝐹𝐹 (𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚𝑚) + 𝐸𝐸𝐹𝐹 (𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠)] = 0.6V

(d)

(e)

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3. The C-V characteristics of an MOS-C are measured before and after performing a post-metallization
anneal to eliminate interfacial traps. The AFTER C-V characteristic exhibited by the device is traced in Fig.
3. Assuming acceptor-like interfacial traps, sketch the C-V characteristic of the device BEFORE annealing
on the same set of coordinates. Explain how you arrived at your answer. (15)

Fig. 3

Sol) We infer from the C-V characteristics that the MOS-C is a p-bulk device. Also, we know that acceptor-like
traps are negatively charged when filled with an electron and neutral when empty. For a p-bulk MOS-C the
effect of biasing on the occupation and charge state of the acceptor-like traps is summarized in the following
figure.

We also note
𝑄𝑄𝐼𝐼𝐼𝐼
∆𝑉𝑉𝐺𝐺 = −
𝐶𝐶𝑜𝑜
Thus, relative to the “after” or negligible 𝑄𝑄𝐼𝐼𝐼𝐼 situation, the “before” characteristics will be shifted positively
(𝑄𝑄𝐼𝐼𝐼𝐼 is negative) and the displacement will systematically increase as one progresses from accumulation,
through depletion, to inversion. The deduced “before” characteristics are pictured below.

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4. The experimental characteristics of an ideal n-channel MOSFET biased in the saturation region are
shown in Fig. 4. If 𝑾𝑾⁄𝑳𝑳 = 𝟓𝟓 and 𝒕𝒕𝒐𝒐𝒐𝒐 = 𝟐𝟐𝟐𝟐𝟐𝟐 Å, determine 𝑽𝑽𝑻𝑻 and 𝛍𝛍𝒏𝒏 . (15)

Fig. 4

Sol)
We find that 𝑉𝑉𝑇𝑇 ≅ 0.2𝑉𝑉 (3 points, the rest score 12 points)
Now

𝑊𝑊μ𝑛𝑛 𝐶𝐶𝑜𝑜𝑜𝑜
�𝐼𝐼𝑑𝑑 (𝑠𝑠𝑠𝑠𝑠𝑠) = � (𝑉𝑉𝐺𝐺𝐺𝐺 − 𝑉𝑉𝑇𝑇 )
2𝐿𝐿

∈𝑜𝑜𝑜𝑜 (3.9)(8.85 × 10−14 )

𝐶𝐶𝑜𝑜𝑜𝑜 = =
𝑡𝑡𝑜𝑜𝑜𝑜 200 × 10−8
or
𝐶𝐶𝑜𝑜𝑜𝑜 = 1.73 × 10−7 F⁄cm2
We are given 𝑊𝑊 ⁄𝐿𝐿 = 5
From the graph, for 𝑉𝑉𝐺𝐺𝐺𝐺 = 3𝑉𝑉, we have

�𝐼𝐼𝑑𝑑 (𝑠𝑠𝑠𝑠𝑠𝑠) ≅ 0.033

Then

𝑊𝑊μ𝑛𝑛 𝐶𝐶𝑜𝑜𝑜𝑜
0.033 = � ∙ (3 − 0.2)
2𝐿𝐿

or
𝑊𝑊μ𝑛𝑛 𝐶𝐶𝑜𝑜𝑜𝑜
= 0.139 × 10−3
2𝐿𝐿
where
𝑊𝑊 𝜀𝜀𝑜𝑜𝑜𝑜 (3.9)(8.85 × 10−14 )
=5, 𝐶𝐶𝑜𝑜𝑜𝑜 = = = 1.73 × 10−7 F⁄cm2
𝐿𝐿 𝑡𝑡𝑜𝑜𝑜𝑜 200 × 10−8

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or
1
(5)μ𝑛𝑛 (1.73 × 10−7 ) = 0.139 × 10−3
2
𝜇𝜇𝑛𝑛 = 321 cm2 ⁄V ∙ s

5. A silicon MOSFET has parameters 𝑵𝑵𝒂𝒂 = 𝟒𝟒 × 𝟏𝟏𝟏𝟏𝟏𝟏𝟏𝟏 𝐜𝐜𝐜𝐜−𝟑𝟑 , 𝒕𝒕𝒐𝒐𝒐𝒐 = 𝟏𝟏𝟏𝟏 𝒏𝒏𝒏𝒏 = 𝟏𝟏𝟏𝟏𝟏𝟏 Å, 𝑸𝑸′𝒔𝒔𝒔𝒔 = 𝟒𝟒 × 𝟏𝟏𝟏𝟏𝟏𝟏𝟏𝟏 𝐜𝐜𝐜𝐜−𝟐𝟐 ,
and 𝝓𝝓𝒎𝒎𝒎𝒎 = −𝟎𝟎. 𝟓𝟓 𝐕𝐕. The transistor is biased at 𝑽𝑽𝑮𝑮𝑮𝑮 = 𝟏𝟏. 𝟐𝟐𝟐𝟐 𝐕𝐕 and 𝑽𝑽𝑺𝑺𝑺𝑺 = 𝟎𝟎. (20)
(a) Calculate ∆𝑳𝑳 for ∆𝑽𝑽𝑫𝑫𝑫𝑫 = 𝟐𝟐 𝐕𝐕. ∆𝑽𝑽𝑫𝑫𝑫𝑫 is defined as ∆𝑽𝑽𝑫𝑫𝑫𝑫 = 𝑽𝑽𝑫𝑫𝑫𝑫 − 𝑽𝑽𝑫𝑫𝑫𝑫 (sat)
(b) Determine the minimum channel length L such that ∆𝑳𝑳⁄𝑳𝑳 = 𝟎𝟎. 𝟏𝟏𝟏𝟏 for 𝑽𝑽𝑮𝑮𝑮𝑮 = 𝟏𝟏. 𝟐𝟐𝟐𝟐 𝐕𝐕 and ∆𝑽𝑽𝑫𝑫𝑫𝑫 = 𝟐𝟐 𝐕𝐕.
Sol)
(a)
𝜀𝜀𝑜𝑜𝑜𝑜 (3.9)(8.85 × 10−14 )
𝐶𝐶𝑜𝑜𝑜𝑜 = = = 2.876 × 10−7 F⁄cm2
𝑡𝑡𝑜𝑜𝑜𝑜 120 × 10−8
′ (4 × 1010 )(1.6 × 10−19 )
𝑄𝑄𝑠𝑠𝑠𝑠
𝑉𝑉𝐹𝐹𝐹𝐹 = 𝜙𝜙𝑚𝑚𝑚𝑚 − = −0.5 − = −0.5223 V
𝐶𝐶𝑜𝑜𝑜𝑜 2.876 × 10−7
Now
′
|𝑄𝑄𝑆𝑆𝑆𝑆 (max)|
𝑉𝑉𝑇𝑇 = + 𝑉𝑉𝐹𝐹𝐹𝐹 + 2𝜙𝜙𝑓𝑓𝑓𝑓
𝐶𝐶𝑜𝑜𝑜𝑜
We find
4 × 1016
𝜙𝜙𝑓𝑓𝑓𝑓 = (0.0259) ln � � = 0.3832 V
1.5 × 1010
1⁄2
4(11.7)(8.85 × 10−14 )(0.3832)
𝑥𝑥𝑑𝑑𝑑𝑑 = � � = 1.575 × 10−5 cm
(1.6 × 10−19 )(4 × 1016 )
′
|𝑄𝑄𝑆𝑆𝑆𝑆 (max)| = 𝑒𝑒𝑁𝑁𝑎𝑎 𝑥𝑥𝑑𝑑𝑑𝑑 = (1.6 × 10−19 )(4 × 1016 )(1.575 × 10−5 ) = 1.008 × 10−7 C⁄cm2
So
1.008 × 10−7
𝑉𝑉𝑇𝑇 = − 0.5223 + 2(0.3832) = 0.595 V
2.876 × 10−7
𝑉𝑉𝐷𝐷𝐷𝐷 (𝑠𝑠𝑠𝑠𝑠𝑠) = 𝑉𝑉𝐺𝐺𝐺𝐺 − 𝑉𝑉𝑇𝑇 = 1.25 − 0.595 = 0.655 V
For n+p junction,

2𝜀𝜀𝑠𝑠 𝑉𝑉𝑏𝑏𝑏𝑏
𝑥𝑥𝑝𝑝 = � , 𝑉𝑉𝑏𝑏𝑏𝑏 = 0.56 + 𝜙𝜙𝑓𝑓𝑓𝑓
𝑒𝑒𝑁𝑁𝑎𝑎

2𝜀𝜀𝑠𝑠 2(11.7)(8.85 × 10−14 )

� =� = 1.799 × 10−5 cm⁄V 1⁄2
𝑒𝑒𝑁𝑁𝑎𝑎 (1.6 × 10−19 )(4 × 1016 )

2𝜀𝜀𝑠𝑠
∆𝐿𝐿 = � ��𝜙𝜙𝑓𝑓𝑓𝑓 + 0.56 + 𝑉𝑉𝐷𝐷𝐷𝐷 (𝑠𝑠𝑠𝑠𝑠𝑠) + Δ𝑉𝑉𝐷𝐷𝐷𝐷 − �𝜙𝜙𝑓𝑓𝑓𝑓 + 0.56 + 𝑉𝑉𝐷𝐷𝐷𝐷 (𝑠𝑠𝑠𝑠𝑠𝑠)�
𝑒𝑒𝑁𝑁𝑎𝑎

→ ∆𝐿𝐿 = (1.799 × 10−5 ) × �√0.3832 + 0.56 + 0.655 + 2 − √0.3832 + 0.56 + 0.655�

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 ∆𝐿𝐿 = 1.138 × 10−5 cm = 0.1138 ㎛

(b)
∆𝐿𝐿 0.1138
= 0.12 =
𝐿𝐿 𝐿𝐿

𝐿𝐿 = 0.948 ㎛

6. The as-fabricated C-V characteristic derived from an MOS-C is pictured in Fig.6. After fabrication,
precisely one-half of the gate area is exposed to ionizing radiation, which increases the apparent fixed
charge (𝑸𝑸𝑭𝑭 ) in the exposed half of the device. The increase in interfacial trap density caused by the
irradiation is negligible. Sketch the expected form of the C-V characteristic after irradiation on the same
set of coordinates as the pre-irradiation characteristic. Also explain how you arrived at your answer. HINT:
Think of the two halves of the MOS-C as separate capacitors, (15)

Fig. 6

Sol)

The two halves of the MOS-C may be viewed as separate capacitors.

Before irradiation, each half will contribute precisely one-half of the observed capacitance, each yielding a C-V
1
characteristic like that labeled “ before” in the figure below. After irradiation, the C-V characteristic of the
2
1
affected half (labeled “ after” in the figure below) will be shifted toward negative voltages due to apparent 𝑄𝑄𝐹𝐹 .
2
1 1
Graphically combining the “ before” and “ after” curves yields the total expected “after curve.
2 2