(0

INSTRUCTION MANUAL
FOR

CHARACTERISTICS OF SCR, WIOSFET,IGBT,TRIAC & DIAC

A

Characteristics of SCR, MOSFET,IGBT, TRIAC & DIAC Apparatus has been designed to
study the Characteristics and Applications of the following;

A) Diac

B) Triac

C) Silicon Controlled Rectifier(SCR)

D) MOSFET

E) IGBT

The instrument comprises of the following built in parts

y

Tv^/o DC regulated power supplies of 0-3V/15V, 0-5V/ 0-50V.

2 Diac is mounted on front panel and connections are brought out on sockets.

3 Triac is mounted on front panel and connections are brought out on sockets.

^ SCR is mounted on front panel and connections are brought out on sockets.

g MOSFET is mounted on front panel and connections are brought out on sockets.

Q IGBT is mounted on front panel and connections are brought out on sockets.Four moving
coil analog meters are mounted on front panel & connections brought on sockets

^ Four moving coil analog meters are mounted on front panel & connections brought on
sockets.
 THEORY

A) DIAC:
A Diac is a two terminal,three layer bidirectional device which can be
sitched from its OFF state to ON state for either polarity of applied voltage Fig.
shows the basic structure of a diac and Fig.shows the symbol of a Diac. The two
leads are connected to P-regions of silicon separated by an N-region.
The structure of the Diac is somewhat like a transistor with the following basic
differences.

jj There is no terminal attached to the base layer.

jj) The dopping concentrations are identical (unlike a bipolar transistor) to

t
give the device symmetrical properties.

CIRCUIT OPERATION

Circuit diagram of the diac is shown in Fig. and V-l characteristics are shown in Fig.When a
positive or negative voltage is applied
I across the terminals of a diac, only a small
leakage current Ig^ will flow through the
device. As the applied voltage increased, 1K

the leakage current will continue to flow until

DIAC
the voltage reaches the breakover voltage Vm-=L
v
^ Bo'
At this point, avalanche breakdown of
the reversed-bias junction occurs and the
device exhibits negative resistance i.e
current through device increases with the
decreasing values of applied voltage. The voltage across
the device then drops to'breakback'voltage V^.

Fig shows the V-l characteristics of a diac, for

applied positive voltage less than +Vg^and negative voltage
less than a small leakage current(+Ig^)flows through
the device. Onder such conditions,the diac blocks the flow
of current and effectively behaves as an open circuit. The
voltage +Vg^ and -Vg^ are the breakdown voltages and
 usually have a range of 30 to 50 volts. When positive or negative applied voltage is equal to or
greater than the breakdown voltage, diac begins to conduct and the voltage drop across it
; becomes a few volts. Diacs are used primarily for triggering of triacs in adjustable phase control
" of a.c. mains power. Some of the circuit applications of diac are light dimming, heat control and
universal motor speed control.

B) TRIAC:
A Triac is a three terminal semiconductor switching device which can control
alternating current in a load.
Triac is an abbreviation for triode AC switch. Tri' - indicates that the device has three
terminals and AC means that the device controls alternating current or can conduct current in
either direction. Since a triac can control conduction of both positive & negative half-cycles of
a.c. supply, it is sometimes called a bidirectional semi-conductor triode switch. A triac is a
bidirectional switch having three terminals. It can be seen that even symbol of triac indicates that
it can conductfor either polarity of voltage across the main terminals. The gate provides control
over conduction in either direction. Triacs are commercially available to handle maximum r.m.s.
currents from about 0.5A upto 25A, although special triacs for upto about 1000 A have been
developed. As the current handling capacity increases so does the semi-conductor element size
and the containing package.

C) SILICON CONTROLLED RECTIFIER (SCR):

The Silicon Controlled Rectifier
(abbreviated as SCR)is a three terminal semiconductor switching device which is probably the
most important circuit element after the diode and the transistor. SCR are used as a controlled
switch to perform various functions such as rectification,inversion and regulation of power flow.
The SCR has assumed permanent importance in electronics because it can be produced
inversions to handle currents upto several thousand ampears and voltages upto more than 1KV.
It is a unidirectional power switch and is being extensively used in switching DC and AC,rectifying
/\C to give controlled DC output, converting DC into AC etc. In a silicon controlled rectifier, load
is connected in series with anode.The anode is always kept at positive potential w.r.t cathode,
jlie working of SCR can be studied under the following two steps.

^ WHEN GATE IS OPEN

Fig. shows the SCR circuit with gate open i.e no voltage applied to the gate. Under this condition,
junction JJs reverse biased while junctions J, and Jgare forward biased. Hence the situations in
the junctions and J3 isjust as in a npn transistor with base open. Consequently, no currentflows
 NO
through the load and the SCR is cut off. However, if the VOLTAGE
GATE^_®
applied voltage is gradually increased, a stage is reached when
: reverse biased junction J2 breaks down. The SCR now Jl J3
conducts heavily and is said to be in the ON state. The applied ANODE D n n
n K CATHODE

voltage at which SCR conducts heavily without gate voltage is

called Breakover voltage.
RL

2. WHEN GATE IS POSITIVE W.R.T. CATHODE

The SCR can be made to conduct heavily at smaller applied voltage by applying a small positive
potential to the gate as shown in Fig. Now junction J3is forward biased and junction is reverse
biased. The electron from n type material start moving across
junction J3 towards left where as holes from P type toward the
right. Consequently,the electrons from junction J3 are attracted
across junction and gate current starts flowing. As soon as
the gate currentflows, anode current increases. The increased
anode current in turn makes more electrons available atjunction +

This process continues and in an extrerriely small time,

junction breaks down and the SCR starts conducting heavily.
T I V

Once SCR starts conducting,the gate loses all controls. Even

if gate voltage is removed, the anode current does not
decrease at all. The only way to stop conduction (i.e bring SCR
in off condition)is to reduce the applied voltage to zero.

preakover voltage It is the minimum forward voltage, gate being open , at which SCR starts
conducting heavily i.e turned ON.

poak inverse voltage:- It is the maximum reverse voltage(cathode positive w.r.t anode)that can
be applied to an SCR without conducting in the reverse direction.

I current It is the maximum anode current,gate being open, at which SCR is turned off
from ON conditions.

MOSFET:
D)
MOSFET(Metal Oxide Semiconductor Field Effect Transistor) is a field
effect transistor whose drain current Ip is controlled by the voltage on the gate. This n-channel
enhancement MOSFET finds wide application in digital circuit. MOSFET has a much higher
input impedance because of very small gate leakage current. In a MOSFET gate is formed as a
 small capacitor. One plate of this capacitor is the gate and the other plate is the N-channel with
•4
metal oxide as the dielectric.

When positive voltage is applied to the gate, more electrons are made available in the n-
channel. Therefore more number ofconduction electrpns are made available for current conduction
from source to drain, as a result currentfrom source to drain increases.

note :1. In n-channel enhancementtype MOSFET,Gate is can never operated with negative
voltage.

E) IGBT :
Bipolar junction transistor (BJTs) and MOSFETs, have characteristics that
complern®nt each other in some respect. BJTs especially with large blocking voltage have lower
conduction losses in the on-state but have longer switching times especially at turn - off. MOSFETs,
on the other hand can be turned -on and turned - off much faster but there on state conduction
losses, especially for the device with higher blocking voltages, are larger.
Insulted Gate Bipolar Transistor (IGBT) combines the high off state and low on state voltage
characteristics of BJT and the high input impedance properties of the MOSFET.

1
C QCoiledor
Drill region IC
rc&t»iancc

N OfHt
region
, jl
i

JisSi^iisL
6 OEmltler
(d) Veifics) cross*s^cm (i&) Hi^h current otpivMent drndt'

Shows the structure of a typical n-channel IGBT. All discussion here will be concerned with the n-
channel type but p-channel IGBTs can be considered in just the same way. The structure is very
simila""to that of a vertical diffused MOSFET featuring a double diffusion of a p-type region and an n-
type region. An inversion layer can be formed under the gate by applying the correct voltage to the gate
contact as with a MOSFET. The main difference is the use of a p+ substrate layer for the drain. The
effect is to change this into a bipolar device as this p-type region injects holes into the n-type drift
region.
&
Operation.
The ON/OFF state of the device Is controlled, as in a MOSFET, by the gate voltage VG.
If the voltage applied to the gate contact, with respect to the emitter, is less than the threshold voltage
V th then no MOSFET inversion layer is created and the device is turned off. When this is the case,
any applied forward voltage will fall across the reversed biased junction J2. The only current to flow will
be a small leakage current.The forward breakdown voltage is therefore determined by the breakdown
voltage of this junction. This is an important factor, particularly for power devices where large voltages
and currents are being dealt with. The breakdown voltage of the one side junction is dependent on the
doping of the lower-doped side of the junction, i.e. then side. This is because the lower doping results
in a wider depletion region and thus a lower maximum electrical field in the depletion region. It is for
this reason that n- drift region is doped much lighter than the p-type body region . The device that is
being modeled is designed to have a breakdown voltage of600V.The n+ buffer layer is often present to
prevent the depletion region ofjunction J2from extending right to the p bipolar collector. The inclusion
of this layer however drastically reduces the reverse blocking capability ofthe device as this is dependent
on the breakdown voltage of junction J3, which is reverse biased under reverse voltage conditions.
The benefit of this buffer layer is that it allows the thickness of the drift region to be reduced , thus
reducing on - state losses,
on - State Operation
The turning on of the device is achieved by increasing the gate voltage VGE so that the threshold
voltage Vth. This result in an inversion layer forming under the gate which provides a channel linking
the source to the drift region of the device. Electrons are then injected from the source into the drift
rggion while at the same time junction J3, which is forward biased, injects holes into the n- doped drift
region.

f'' i

'-i't -I., >.

T
 This Injection causes conductivity modulation of the drift region where both the electron and hole
densities are several orders of magnitude higher than the original n- doping. It is this conductivity
' modulation which gives the IGBT its low on-state voltage because of the reduced resistance of the
drift region. Some of the injected holes will recombine in the drift region, while others will cross the
region via drift and diffusion and will reach the junction with the p-type region whose base drive current
is supplied by the MOSFET current through the channel. A simple equivalent circuit is therefore as
shown in fig.

S
J
I Vj
*

XPltfklKI
Okie Soty
h h
t-

1 jtiiltir

C») m

Fig was a more complete equivalent circuit which includes the parasitic NPN formed by the n+- type
region .If the current following through this resistance is high enough it will produce a voltage drop that
will forward the junction with the n+ region turning on the parasitic transistor which form part of a
parasitic thyristor. Once this happens there is a high injection of electrons from the n+ region into the
p region and all gate control is lost. This is known as latch up and usually leads to device destruction.

P. IGBT Characteristics . In the N- channel IGBT, the N- channel MOSFET converts the PNP power
bipolar transistor action into a positively controlled device. The emitter of the internal device is seen
externally as collector. The device,therefore, behaves as a voltage controlled constant current source
of approximate forward trans- conductance rating (GfTC) of 3-5 AN (or MHOS). As shown in fig.4
Capacitance OGE can be very significant in state transition due to the Miller effect", namely the
alteration of the apparent value of a component by virtue of it forming a feedback loop of an amplifier.
-fhe component may be parasitic or a separate circuit element. Then,
 Cin = CGE + CGC (1 + Gf] cgc

vcc: :cce I ®/TC

Ocr> CIrcttk Mipi* IGBT Action

I
An IGBT has an inputcapacitanceapproximately (1/10)th that of an equivalent MOSFET but the gate
-to collector overlap capacitance Is comparable and,therefore,the 'Miller effect can be more significant
t
. Like a MOSFET,there Is a gate emitter threshold voltage(V GETH)of 2-5 V which must be exceeded
before significant collector ci
increasing

' j
I

- I

Because of device compounding , the saturation resistance has only a slight temperature coefficient
which is positive at higher levels and negative at low levels of load current . In simple terms, the
collector emitter characteristics are similar to those of the bipolar junction transistor but the control
features(the gate control characteristics Is that of the MOSFET).

The output characteristics(IC-VCE)of an N -channel IGBT Is shown In flg.5 In the forward direction
they appear qualitatively similar to those of a bipolar junction transistor fig. Except that
controlling parameter Is an Input voltage(VGE)rather than an Input gate current(IG).The characteristics
cf p.channel IGBT would be the same except the polarities of the voltages and current will be reversed

The transfer characteristics (IC - VGE)shown In flg.5 Is Identical to that of power MOSFET's . The
curve is responsible linear over most of the collector current range except when the collector
 1{:^= Imrf<1+PPNP), lllc

\ " d£
''(lO CquivaliHit chcwit duriftE tum-off

VgeTH

The IGBT gate charge characteristics for switching are similar to those of the MOSFET. The basic
action of IGBT turn - on is, therefore, similar to that of a MOSFET The turn off in an IGBT is a duplex
process in which the power bipolar transistor fig.7 Now plays a dominant role.fig.8 shows IGBT turn
off waveforms which has components due to MOSFET and BJT

I « X
N 1 ! '

I I

1-9* Vcc

4 I

^SFCt
Cwrr«nt

(e) ItetwJff tvavefotms.

 As with the MOSFET, several distinct time Interval exit during the turn off period of the device when
switching an Inductive load These are :
I) td(off) or turn -off delay time: The gate voltage falls to a level determined by the gate threshold
'voltage (VGETH), the forward trans - conductance (GfTC) and the MOSFET section current level
(1mos).
il) Trv or voltage rise time: As the collector voltages rises but the collector time current remains
constant, the gate voltage remains constant while charging the Miller capacitance . For a high gain
PNP section the voltage rise time Is virtually Independent of gate resistance, while for an IGBT closely
resembling a MOSFET,the voltage rise Is gate current magnitude dependent.
Ill) Tfl1 or MOSFET current reduction time: This Interval Is largely controlled by the rate at which
the charge is extracted from the gate capacity under the external control and occupies most of the
current fall time due to MOSFET action as In the previous two time Intervals.

iv)Tfl2 or BJT tall time: During this time Interval of turn off current-time characteristics. the current
fall Is outside the control of external effects. Then with the gate voltage at the threshold level(VGETH)
s.
the current time characteristics Is controlled by charge recombination of the residual charge In the
central plasma of the device. A trade off, however, Is necessary between on state losses and faster
switching turn off times of IGBT which Is related with tfl2.

PROCEDURE

procedure for piAC

f.

■] Connect the circuit as shown in Fig. through patchcords.

2. Initially set the current meter range to 1.5mA.
3 Switch ON the instrument using ON-OFF toggle
switch provided on the front panel.
^Sr. DIAC VOLTAGE DIAC CURRENT
4 Increase the voltage in steps with the voltage control
No. [VOLTS] (mA)
potentiometer & note down the value of current. 1.
5 When the current exceeds the current meter range, 2.

change the range of current meter to 60mA. 3.

4.
6. At a particular value of voltage, when applied
5.
voltage approaches the breakover voltage Vg^^as y
OBSERVATION TABLE NO. (1)
shown in Fig. the device exhibits negative
resistance i.e. current through the device increases
with the decreasing values of applied voltage.
 7. Note down the observation in observation Table No.(1).
.4 8. Draw a graph between voltage and current, by taking voltage across X- axis and current
across Y - axis.

PROCEDURE FOR TRIAC

FOR FORWARD CHARACTERISTICS :

(i) WITH OPEN GATE

1 Connect the circuit as

shown in Fig. 600uA/ 60 mA 500"
2. Keep gate supply control
0-50V-
knob to minimum position
5/50V
so that gate current =-3V
becomes zero..

3 Select milliammeter
range to 600pA
connected in series of MT1 and voltmeter range to SOVolts connected across MT1 &
MT2.
4 Increase the 0-50V DC power supply in small steps and note down the corresponding
MT1current. As the MT1 current is small Traic is in 'OFF'state.

NOTE Break over of Triac with open gate will take place at higher voltages, maximum
permissible forward voltage. It is undesirable to apply this voltage as Triac is
never used with open gate.

WHEN GATE IS POSITIVE / NEGATIVE W.R.T MT2 :■

(ii)-

1. Connect the circuit as AAA/\r-]

shown in Fig. eoopA/eomA 5oon

2. Repeat steps (2) to (4)

0-50V!
as given in case of ^
open gate circuit.
3. Select milliammeter
range to 60 tpA.
4. Increase gate current
(Ig) in small steps, at a pedicular value of Ig, Triac will turn ON resulting sudden increase in
 f-

MT1 current and decrease in MT1 - MT2

MT1+VE
voltage. /gate
GATE SIGNAL
/ +VEOR-VE
+VE
5. Change the range of voltmeter to 5V after
triggering oftheTriac. vbo

6. Also note down the gate current Ig required -v Vdb +V

for Wggering the Triac. MT1-VE

GATE SIGNAL
7. Plot the graph as shown in the Fig. +VE OR -VE
1
PROCEDURE FOR SILICON CONTROLLED RECTIFIER

FORWARD CHARACTERISTICS ;

(0 WITH OPEN GATE

1. Connect the circuit as shown 1.5/60mA

in Fig.
2. Keep gate supply control knob
to minimum position so that — 0-50V
DC
gate current becomes zero. V 15/50V

3. Select milliammeter range to

f 1.5mA and voltmeter range to
aOVolts.
4. Increase anode supply and note down corresponding anode-cathode voltage and anode
current lA.As lA is small SCR is in 'OFF'state.

NOTE Break over of SCR with open gate will take place at higher voltage (Say lOOv),
g, maximum permissible forward voltage. It is undesirable to apply this voltage as SCR
is never used with open gate.

(ii) WHEN GATE IS POSITIVE W.R.T CATHODE

1. Connect the circuit as shown in Fig.

2. Repeat step(2)to(4)as given above (in case of open gate circuit).
3. Select milliammeter range to 60 mA.
4. Increase gate current(1^)in small steps at a particular value of Ig.SCR will turn ON resulting
sudden increase in anode current lA, if lAexceeds the current meter range reduce AA

(Anode Voltage).
rr

5. Change the range of voltmeter to 5V after triggering of SCR and note down the Anode-
Cathode voltage.
6. Also note down the gate current Ig required for triggering the SCR at a given

TO RECORD HOLDING CURRENT IH.

7. Select milliammeter range to 60 mA&.voltmeterto50VDC range.

8. Turn ON the SCR(Say forV^^=15v)and turn the gate suply knob to minimum position.
9. Decrease 1^ by decreasing anode supply gradually.At certain value of lA drops suddenly
towards zero and increases. This value of anode current(lA)is the holding current
(1^). Below 1^ SCR will remains in OFF state. On the other hande above 1^ SCR remains in
ON state.

TO RECORD HOLDING VOLTAGE(VH)

10. Turn ON the SCR and change the range of voltmeter to 5V start decreasing slowly so
that anode current decreases to holding current IH. Record the corresponding value of
This is the holding voltage VH(appx.0.8 to 0.9V).

REVERSE CHARACTERISTICS 1.5/ 60mA

+/

1. Connect the circuit as

shown in Fig. 0-50V
0-2.5V --
2. Repeat all the steps V'15/ 50V

as in case of forward
characteristics procedure.
3. Record all the possible results and plotthe graph as shown in Fig.(In reverse characteristic
SCR will not turn on).

PROCEDURE FOR MOSFET

1 Connect the circuit as shown in Fig.

2 Keep control Knobs of both the Power supplies anticlock wise & switch on the instrument
by changing the position of toggle switch to ON side provided on the front panel. LED
provided on the front panel will glow indicating that instrument is ready for use.
 MOSFET CHARACTERISTICS APPARATUS

0-3/15V DC 1.5/60mA DC 5/50V DC

(fi) <o)

Rs ■■ ^^-4..+
+ <o) ®- r"(o)—
ID &
®
SET VOLTS
SET VOLTS

-(i)"

3 Keep V^g(Gate to Source Voltage)constant at 3.2V.

4 Keep Drain to Source voltage at 0.5 V & note down

the corresponding Drain current.
-❖^-cinrentj

'■^J-current 2
Increase the drain-source voltage in the steps of0.5 - iv cunent 3

V and note the effect of that voltage on drain current

'o-

er Now repeatthe steps4&5for different Gate voltages

say 3.3V, 3.5V etc and notedown the observation in Table
#
No.(3).
fs. v,s = 20V
No.
Vgs(V) iDs(mA)
7 Plot a Graph between Drain to source Voltage (VDS)& 1
Drain Current (1^) keeping V^g (Gate to Source Voltage)
2
constant as shown in Fig.
ft;
3
Transfer Characteristics:
4

1 Connect the circuit as shown in Fig. 5

6
V J
2 Keep control Knobs of both the Power supplies anticlock
wise & switch on the instrument by changing the position of
 toggle switch to ON side provided on the front panel. LED provided on the front panel will glow
indicating that instrument is ready for use.

3 Keep Vpg(Drain to Source Voltage)constant at SOVolts.

Keep Gate to Source voltage at 0.5V and note down the drain
\
-/
current. -O-Cotimal

Increase the gate source voltage in steps and note down ",„
corresponding drain current in Observation Table.

6 Plot a graph between Gate- Source Voltage(V^g)and Drain Current(1^)as shown in Fig
(3).

PROCEDURE FOR IGBT

3»%
A
To show the transfer and output characteristics of Insulated gate Bipolar Transistor.
1. Keep the variable voltages pot VGE & VCE at extreme anticlockwise position.

IGBT CHARACTERISTICS APPARATUS

0-3/15V DC 1.5/60mA DQ 5/50V DC

<fi) <o) <S>

Rs ■■ ■
+(|)—-®—nA/V\A r--®— —
Id

SET VOLTS
SET VOLTS

-d). ■d)-
2. Connect the voltmeters, milliammeter & also the IGBT's GATE, collector & Emitter terminals
(G,C & E)from the characteristics circuit with the G,C & E terminals at the top right side of
panel respectively.
3. Keep the switch lamp switch in Off position.
4. Now switch on the power supply.
As the current is observed at the threshold voltage,therefore we take the observation at
VGE=V,.
Take VGE = 4.7V constant

Serial VGE IC VCE

no. (In volts) (In mA) (In volts)
1

Table No.(1)
Similarly take the readings for VGE = 4.9V, 5.1V and 5.3V
ForlGBTHGTG 12N60G3P Vth=4.5V. At the value ofyGE=5.5V(approx.)the IGBT not able to
reach its saturation current.
PRECAUTIONS:

1. Do not short the sockets on front panel.

2. Keep the mains off when connections are made or break.
3. Keep current polarities in account.
 5. Set the gate Emitter voltage VGE = 1V by rotating the pot of 0-1OVDC in clockwise
direction.

6. By rotating the pot 0-20VDC i.e. VCE in clockwise direction .observe the reading
miliammeter i.e. !(,.
7. now set the VCE again in extreme anticlockwise position & repeat the steps 5 & 6 for
VGE=1.SV.Thus steps 5&6 is repeated for increasing value of VGE.
8. The collector current(10)displays zero on Meter until VGE reaches its threshold voltage
V,^ i.e. IGBT acts in its active region. The value of Vth lies between 2-5 volts.
9. At the threshold voltage when we increase the VCE the current 1^, reaches its saturation
current l^sat.The voltage between collecter & emitter at which current is saturated is
called VCEsat. Take the observations in observation table.
10. Beyond the threshold voltage the saturation current is different for different values of VGE.
11. Plot the output characteristics of IGBT by making graph between Ic & VCE at different
values of VGE the curve is similar to as in fig.5
12. Plot the transfer characteristics i.e graph between l^, & VGE by setting VCE = 5V as in fig.6
As the current is observed at the threshold voltage,therefore we take the observation at
VGE=V^.
Take VGE = 4.7V constant

Serial VGE IC VCE

no. (in volts) (In mA) (In volts)
1

Table No.(1)
Similarly take the readings for VGE = 4.9V, 5.1V and 5.3V
For IGBT HGTG 12N60C3P Vth=4.5V.Atthe value of yGE=5.5V (approx.)the IGBT not able to
reach its saturation current.
PRECAUTIONS:

1. Do not short the sockets on front panel.

2. Keep the mains off when connections are made or break.
3. Keep current polarities in account.