Absolute Maximum Ratings Values SEMITRANS® M

1)
Symbol Conditions ... 123 D ... 123 D1 Units IGBT Modules
VCES 1200 V SKM 200 GA 123 D*)
VCGR RGE = 20 kΩ 1200 V SKM 200 GB 123 D
Tcase = 25/80 °C
IC
ICM Tcase = 25/80 °C; tp = 1 ms
200 / 180
400 / 360
A
A
SKM 200 GB 123 D1 6)
VGES ± 20 V
SKM 200 GAL 123 D 6)
Ptot per IGBT, Tcase = 25 °C 1380 W SKM 200 GAR 123 D 6)
Tj, (Tstg) – 40 . . .+150 (125) °C
Visol AC, 1 min. 2 500 7) V
humidity DIN 40 040 Class F
climate DIN IEC 68 T.1 40/125/56
Inverse Diode FWD 6)
IF= – IC Tcase = 25/80 °C 200 / 130 260 / 180 A
IFM= – ICM Tcase = 25/80 °C; tp = 1 ms 400 / 360 400 / 360 A
IFSM tp = 10 ms; sin.; Tj = 150 °C 1450 1800 A
I2t tp = 10 ms; Tj = 150 °C 10 500 24 200 A2s
SEMITRANS 3
Characteristics
Symbol Conditions 1) min. typ. max. Units 6)
V(BR)CES VGE = 0, IC = 4 mA ≥ VCES – – V
VGE(th) VGE = VCE, IC = 6 mA 4,5 5,5 6,5 V
 Tj = 25 °C
6)
ICES VGE = 0 – 0,2 3 mA

VCE = VCES  Tj = 125 °C – 12 – mA
IGES VGE = 20 V, VCE = 0 – – 1 µA GA GB GAL GAR
VCEsat IC = 150 A VGE = 15 V;  – 2,5(3,1) 3(3,7) V Features
 
VCEsat IC = 200 A Tj = 25 (125) °C  – 2,8(3,6) – V • MOS input (voltage controlled)
gfs VCE = 20 V, IC = 150 A 95 – – S • N channel, Homogeneous Si
CCHC per IGBT – – 700 pF • Low inductance case
Cies • Very low tail current with low
 VGE = 0 – 10 13 nF
temperature dependence
Coes  VCE = 25 V – 1,5 2 nF
Cres  f = 1 MHz – 0,8 1,2 nF • High short circuit capability,
LCE – – 20 nH self limiting to 6 * Icnom
• Latch-up free
td(on)  VCC = 600 V – 220 400 ns • Fast & soft inverse CAL
tr  VGE = -15 V / +15 V3) – 100 200 ns diodes8)

td(off)  IC = 150 A, ind. load – 600 800 ns • Isolated copper baseplate
tf  RGon = RGoff = 5,6 Ω – 70 100 ns using DCB Direct Copper Bon-
Eon 5)  Tj = 125 °C
 – 24 – mWs ding Technology
Eoff 5) – 17 – mWs • Large clearance (13 mm) and
Inverse Diode 8) creepage distances (20 mm).
VF = VEC IF = 150 A  VGE = 0 V;  – 2,0(1,8) 2,5 V Typical Applications: → B6 - 153
 
VF = VEC IF = 200 A  Tj = 25 (125) °C  – 2,25(2,05) – V • Switching (not for linear use)
VTO Tj = 125 °C – – 1,2 V
rT Tj = 125 °C – 5 7 mΩ 1)
Tcase = 25 °C, unless otherwise
IRRM IF = 150 A; Tj = 25 (125) °C2) – 55(80) – A specified
Qrr IF = 150 A; Tj = 25 (125) °C2) – 8(20) – µC 2)
IF = – IC, VR = 600 V,
FWD of types “GAL”, “GAR” "123D1"8) 6) – diF/dt = 1500 A/µs, VGE = 0 V
3)
VF = VEC IF = 150 A  VGE = 0 V;  – 1,85(1,6) 2,2 V Use VGEoff = -5 ... -15 V

IF = 200 A  Tj = 25 (125) °C  See fig. 2 + 3; RGoff = 5,6 Ω
5)
VF = VEC – 2,0(1,8) – V
6)
VTO Tj = 125 °C – – 1,2 V The free-wheeling diodes of the
rT Tj = 125 °C – 3 5,5 mΩ GAL and GAR types have the
IRRM IF = 150 A; Tj = 25 (125) °C2) – 60(90) – A data of the inverse diodes of
Qrr IF = 150 A; Tj = 25 (125) °C2) – 8(23) – µC 7)
SKM 300 GA 123 D
Visol = 4000 Vrms on request
Thermal Characteristics 8)
CAL = Controlled Axial Lifetime
Rthjc per IGBT – – 0,09 °C/W Technology.
Rthjc per diode / FWD “GAL; GAR” – – 0,25/0,18 °C/W Cases and mech. data → B6-154
Rthch per module – – 0,038 °C/W *) SEMITRANS 4 → B6-168

 by SEMIKRON 0898 B 6 – 149

SKM 200 GA 123 D…

Tj = 125 °C
VCE = 600 V
VGE = + 15 V
RG = 5,6 Ω

Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC)

IC [A] 1502iu.vpo
1000
Tj = 125 °C t(p)= 1 pulse
VCE = 600 V 20us TC = 25 °C
VGE = + 15 V Tj < 150 °C
IC = 150 A 100
100us

1ms
10

10ms

1 Not for
1 10 100 1000 10000
VCE [V] linear use
Fig. 3 Turn-on /-off energy = f (RG) Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)

ICpuls/IC 1502rso.vpo ICSC/ICN 1502soas.vpo

2.5 Tj < 150 °C 12 Tj < 150 °C

VGE = 15 V VGE = + 15 V
RGoff = 5,6 Ω 10 tsc < 10 µs
2
IC = 150 A L < 25 nH
8
ICN = 150 A
1.5 Note:
*Allowed numbers of
6 short circuit:<1000
*Time between short
1 circuit:>1s

0.5
2

0
0
0 500 1000 1500
0 500 1000 1500
VCE [V] VCE [V]

Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit IC = f (VCE)

B 6 – 150 0898 © by SEMIKRON

 Tj = 150 °C
VGE > 15 V

Fig. 8 Rated current vs. temperature IC = f (TC)

IC [A] 1502us7.vpo
IC [A] 1502us3.vpo
200 200
17V
17V
180 180
15V
15V
160 160
13V 13V
140 140 11V
11V
9V
120 120
9V 7V
100 100
7V
80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 0 1 2 3 4
VCE [V] VCE [V]

Fig. 9 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 10 Typ. output characteristic, tp = 80 µs; 125 °C
IC [A] 1502gf3.vpo
320

280
Pcond(t) = VCEsat(t) . IC(t)
240
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t)
200

VCE(TO)(Tj) ≤ 1,5 + 0,002 (Tj - 25) [V]

160

typ.: rCE(Tj) = 0,0066 + 0,000027 (Tj - 25) [Ω] 120

80
max.: rCE(Tj) = 0,0100 + 0,000033 (Tj - 25) [Ω]
40
+2
valid for VGE = + 15 [V]; IC > 0,3 ICnom
−1 0
0 2 4 6 8 10 12
VGE [V]
Fig. 11 Saturation characteristic (IGBT) Fig. 12 Typ. transfer characteristic, tp = 80 µs; VCE = 20 V
Calculation elements and equations

© by SEMIKRON 0898 B 6 – 151

SKM 200 GA 123 D…

VGE [V] 1502Qg3.vpo 1502C.vpo

C [nF]
20 100
18
600V 800V ICpuls = 150 A VGE = 0 V
16
f = 1 MHZ
14
10 Ciss
12

10

8
Coss
6 1
Crss
4

0 0.1
0 200 400 600 800 1000 1200 0 10 20 30 40
QG [nC] VCE [V]

Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.VCE

1502tic.vpo t [ns] 1502trg.vpo
 104

tdoff Tj = 125 °C Tj = 125 °C

QV
VCE = 600 V VCE = 600 V
tdoff
VGE = + 15 V VGE = + 15 V
tdon
RGon = 5,6 Ω 103 IC = 150 A
tr
RGoff = 5,6 Ω induct. load
tdon
102 induct. load
tf tr

W 102 tf

10
10
0 100 200 300 400
0 20 40 60
IC [A]
5* >::@
Fig. 15 Typ. switching times vs. IC Fig. 16 Typ. switching times vs. gate resistor RG

0*%;/6


P- 9&&  9
5*
7M  ƒ&
9*( ‘ 9 Ω


Ω

Ω

  Ω

 30 Ω


(RII'


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Fig. 17 Typ. CAL diode forward characteristic Fig. 18 Diode turn-off energy dissipation per pulse

B 6 – 152 0898 © by SEMIKRON

© by SEMIKRON 0796 B 6 – 153
SKM 200 GA 123 D…

SEMITRANS 3
Case D 56
UL Recognized
File no. E 63 532

SKM 150 GB 123 D

SKM 200 GB 123 D
SKM 200 GB 123 D1
SKM 200 GB 173 D
SKM 200 GB 173 D1

Dimensions in mm

SKM 150 GAL 123 D SKM 200 GAL 123 D SKM 150 GAR 123 D SKM 200 GAR 123 D
SKM 200 GAL 173 D
Case D 57 (→ D 56) Case D 58 (→ D 56)

Case outline and circuit diagrams For SKM 200 GA 123 D (SEMITRANS 4) → B 6 - 168

This is an electrostatic discharge

Mechanical Data sensitive device (ESDS).
Symbol Conditions Values Units Please observe the international
min. typ. max. standard IEC 747-1, Chapter IX.
M1 to heatsink, SI Units (M6) 3 – 5 Nm Three devices are supplied in one
to heatsink, US Units 27 – 44 lb.in. SEMIBOX A without mounting hard-
M2 for terminals, SI Units (M6) 2,5 – 5 Nm ware, which can be ordered separa-
tely under Ident No. 33321100
for terminals US Units 22 – 44 lb.in. (for 10 SEMITRANS 3). Larger pack-
a – – 5x9,81 m/s2 ing units of 12 and 20 pieces are
w – – 325 g used if suitable
Accessories → B 6 - 4.
SEMIBOX → C - 1.
6)
Freewheeling diode → B 6 - 149, remark 6.

B 6 – 154 0898 © by SEMIKRON