Semiconductors

-Valence Valence Band

2
electron ↓

ci*
·
⑳
·
o
·

...
·
C
2
⑳
⑳
2
3 &

Band
· ⑳

(Conductor)
⑳
o
·

· Solid Structure

=>
atom
single
Conduction
Band
Valence Band
(Insulator)
Solid Structure

duction Band : . -
-

Range of energy possessed by Free

electron is known as Conduction Band .

electrons
>
-
It is
conducting .

>
-
current flow due to such electrons
>
-

if conduction Band is
fully empty
then current conduction is not possible
>
-

Electron exist not in .

it
may
or

Forbidden Gap (EG) .

Ene Eg) .

----
KBI
#= (B)I
-

min n

Energy Gap between conduction Band and valence Band

D
=
if Temp ↑ FEG
(1) Due to difference in concentration (1) Due to diffusion of charge carriers
of charge carriers they diffuse from an internal electic field is produced
higher concentration region to lower across the junction. Due to this field e
concentration region. It means move from p side to n side while holes
electrons diffuse from n to p and move from n side to p side. The motion
holes diffuse from p to n , which of charge carriers due to the electric
causes diffusion current. field is called as drift.
(2) It’s direction is from p to n. (2) its direction is from n to p.
(3) here majority charge carriers (3) Here minority charge carriers
participate. participate.
(4) Initially, it is maximum and then it (4) Drift current mainly depends on
temperature.
decreases during the formation.

This process continuous until the diffusion current equal to the drift current.
Thus a p-n junction is formed. In a p-n junction under equilibrium there is no
net current.

Depletion layer : Near by the junction or across the junction there is a region or layer
where there is total absece of charge carriers and only the presence of immobile +ve and
-ve ions, this layer is called as depletion layer.

Potential barrier or contact potential : Due to diffusion of charge carriers the n material
has lost e and p material has acquired electrons. Therefore n material becomes more positive
related to p material. Since this potential tends to prevent the movement of electrons from
the n region to the p region. It is called as barrier potential. Since it arises across the
contact surface of p and n type material that's why it is called as contact potential.
 P N
·

i ·· i
t
:
t
0
t O 0
E - - -
- _

O - O -

t t t - -
O
-
0
_
0
_
O

t t t it in -
"
-O -0 -
00
-
(af
0 O .

t t t t t -0 -
0
_
0
-
O

i
E

.......

[b )
.

Hi
Some Important points : -

-----o-

1) . The direction of internal electric field is from u to P

.

(2) The width of depletion layer d = 0 . 1 m

(3.) The value of potential barrier

3
For Ge Ybarrier
0
= .

For Si 0 FV
Ybarrier
= .

(4) The potential difference across the junction is

called as
potential barrier because it
the flow of majority charge carriers
opposes
but supports the flow of minority charge carriers
.

(5)
width of depletion layer <
7
"2
(dopping concentration)
Reverse ofdid
characteris :

Reverse
C
Vo

---
"
Voltage

F Reverse
I- +
1
--
MA current
(MA)
(
Y

In reverse bias the current is

very
small (MA)
and almost constant with
change in
voltage it
is called reverse saturation current. At
breakdown voltage ,
current suddenly increase baz
due electric field
bonds start
breaking to
High .

To check
----------
the biasing of diode or PN Junction : -

(1) P >
-

Higher potential ,
Nelower potential ⑬
(2) Pe lower potential , N-Higher Potential RB

(3) P and N at same

potential >
- No
Baising
.
Find the
Baising of given diode
(1) 2018 -

(1) H . P
.
⑬ LP
V -
-

zV
zV -m
3 i
(2) (2)
H .
P .

⑬ LP

D
I 2

+
-
-

>>
I
-
-

°
-

I ICV
E
I
O
·

(3) (3) 2
LP -

O
RB
*
.
H P
-
-

= au I -x I
I
-
-

t
u - -

zu UV
#
-- -

t I
t

=
=
O