Basic Eletronics
Basic Eletronics
CBCS SGHEMIE
18ELN14/24
USN
0 OR
2 a. With aneat circuit diagram and wave foms, explain the working of centre tapped FWR and
device the expression fro ripple factor and eficiency. (08 Marks)
swto b. Write short notes on:
i) Photo diode
canotine (08 Marks)
i) Light emitting diode.
crOSs c. Forthe silicon diode shown in Fig.Q2(c). Calculate the current I; for R4.7KQ.
/or
d1agonal
and
evaluator
draw
compulsonly
to
apncal
identification,
ers, Fig.Q2(c) (04 Marks)
answ
your Module-2
of
3 a. Explain the construction and operation of JFET with necessary diagramns. (08 Marks)
completing
reveal1ng b. Draw and explain VI characteristics of SCR. (07 Marks)
c. For JFET, if loss =9mA, and VGS(om = -8V(max), calculate the value of Ip for Vas = 0,
and Vas =-1V. (05 Marks)
On Any
I OR
Note With aneat diagram, explain the two transistor model ofSCR.
a. (06 Marks)
b. Explain the working of CMOS inverter. (06 Marks)
Important C. Explain the construction of enhancement type MOSFET. (08 Marks)
Module-3
Describe the characteristics of basicop-amp. List its ideal characteristics. (08 Marks)
b. Derive the expression for output of inverting amplifier. (07 Marks)
C. Design an adder circuit using an op amp to obtain an output voltage of
Vo -[3vj +4v) + 5v3]. (05 Marks)
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0 t a n :
18ELN14/24
OR
6 a.Derive the expression for output voltage for the following :
i) Integrator ii)Voltage follower. (08 Marks)
b. Derive the expression for 3 input invcerting summing amplifiers. (08 Marks)
C. An op-amp has a differential voltage gain of 100000 and common mode gain of 0.25
Determine the CMRR and express in decibels. (04 Marks)
Module-4
7 a. What is amplifier? Explain transistor as an amplifier. (08 Marks)
b. Define feedback amplifier. Explain different types of fcedback amplifier. Derive the voltage
gain for voltage series feçdback. (12 Marks)
OR
a. Explain the operation of Wein-bridge oscillator. Derive the expression for frequency of
Oscollation. (08 Marks)
b. Explain the working of astable oscillator using lc = 555 timer. (07 Marks)
c. Explain transistor as a switch. (05 Marks)
Module-5
a. Convert the following:
i) (186.75)10 =(?)2=(?)16
ii) (11010.01101), =(?)10 = (?)6. (08 Marks)
b. Simplify the following exprèssions and draw the logic circuit using basic gates.
i)) AB+ ABC+ ABC+ ABC
ii) (A + B) (A + C). (06 Marks)
C
Realize full adder úsing two half adders. (06 Marks)
OR
10 a. What multiplexer? Explain the working of 4 : 1 multiplexer. (07 Marks)
b. What is lipflop?
23-02-2
Explain the working of JK flipflop. (07 Marks)
C What is shift register? Explain the working of 4bit shift register. (06 Marks)
- MW
2 of2
LIBRARY
GBCS SCHEME BANIAKPA
17ELN15/25
USN
malpracticc. Note: Answer any FIVE fullquestions, choosing ONE fullquestion from each module.
Module-1
a. Explain the operation ofpn junction diode under forward and reverse bias condition.
as (07 Marks)
trcatcd
b. Asinusoidalwave of v=600 sin 314t is applicd to ahalfwave rectifier. The R. =2K2 and
Rr = 60 2, find: (i) l-e (ii) Ims (ii) Vdc (iv) Efficiency n (05 Marks)
pages
be
will C Draw common emitter circuit. Sketch the input and output characteristics and briefly explain
blank the three regions of operation. (08 Marks)
50,
=
reman1ng
8 OR
42 a. With neat circuit diagram and waveforms, explain the working of full wave bridge rectifier.
eg. (08 Marks)
thewntten b. Explain how Zener diode can be used as voltage regulator. (07 Marks)
on C. Obtain the relationship between d-c and Bde. Calculate Ic, Ig and Bac for a transistor that has
lines
cquations (05 Marks)
Ldc 0.9 and lg 50 uA.
cross
diagonal
Module-2
/or 3 a With neat circuit diagram, explain the operation of base bias. circuit with necessary
and
equations. (08 Marks)
evaluator
draw b. What is op-amp? List the characteristics of an ideal op-amp. (06 Marks)
C For the circuit shown in Fig.Q3(c), find the output voltage Vo.
compulsonly Go k
to
appeal
-2V
ident1ficat1on.
answers, 36 ka
3y
Vo
your
of
completing Fig.Q3(c) (06 Marks)
revcaling
OR
On Any
4 a. In the circuit shown in Fig.Q4(a), a silicon transistor with VBE =0.7 V,ß = S0 is used. Draw
the DC 1load line and markQ point.
L. 2.
Note:
2.2k
lmpotant 240 ka
Iof2
17ELNI5/25
voltagc.
b. Explain how op-amp can be used as an integrator. Derive the expression for output (07 Marks)
C Draw and write output voltage expression for following circuits using op-amp: (06 Marks)
(1) Inverting amplifier (ii) Voltage follower (ii) Diferentiator
Module-3
Perform the following:
(i) (37)o =(?)2=(?)8 (08 Marks)
(i) (10110101001.101101)2=(?)6=(?)0
(06 Marks)
b Subtract (101011); from (111001)2 using l's and 2's complements.
c. Simplify and realize using basic gates Y=ABC +ABC +ABC + ABC. (06 Marks)
Module-4
a. Explain the working of NAND Gate latch using logic diagram and truth table. (06 Marks)
b. Explain the working of RS flip-flop using logic diagram and truth table. (06 Marks)
C. With block diagram, explain the architecture of 80S1 Microcontroller. (08 Marks)
OR
a. Explain the working of clocked RS flip-flop using logic diagram and truth table. (07 Marks)
b. Define microcontrollers.Wite theirimportant applications. (05 Marks)
C. With block diagram, explain microcontroller based stepper motor control system. (08 Marks)
Module-5
a Explain the block diagram of basic communication system. (06 Marks)
b. Define amplitude modulation. Derive the mathematicalexpression for AM signal. (08 Marks)
c. Explain the construction and the principle of operation of LVDT. (06 Marks)
OR
10 a. Explain the need for modulation. (06 Marks)
b. Explain the principle of operationof piezoelectric transducer. (08 Marks)
C. Write a short note on photoelectric transducers. (06 Marks)
2of2
3 MV
IRARY
GBCS SChiME
17ELNI5/25
USN
Note: Ansuwer any FIVE full questions, chousing ONEfull question from euch module.
Module-1
I l splain the V-I char:acleristies ofp-n junction divd. (08 Marks)
b W th neat eneuit dgram and wavelorm xplain thhe iworking of fiuli wav: bridge iectilier.
(08 Marks)
Derive the relationship: between a and p. AIso calculate the a value and B value of a
:ansistor. If-100uA and le 21nA. (04 Marks)
OR
2 d. W ith a neatl diagram. explain the Input-Qutpul characteristies of a transistor in common base¢
configuration. (08 Marks)
b. With neat cireuit diagram and wavelorms, explain the working of a half-w.ave rectifier.
(08 Marks)
e. Explain briely capacitor filter cireuit. (04 Marks)
Module-2
3 a. 1xplain the eharacter istic of Ideal operational amplilier. (06 Marks)
b. What is DC load line? Explain with neat circuit the operation of voltage div ider bias cireuit
(O8 Marks)
. Derive the outpul expression of Op-Amp differentiator. (06 Marks)
OR
a Falculate the output voltage of a three input inverting summing amplitier. given
R 200KO. R: 250KO, R3 500K2, R, = IM2, V =-2V. V»= -1V and V = +3V.
(06 Marks)
b. For the circuit shown in Fig.Q.4(6) find theQ-point values and draw DC-load line. w here
Vs0.7Vand B 50, (06 Marks)
+Vce 1 2 Y
R 2 . 2 KA
Vo
Vi-
Fig..i(b)
Iplain brielly inveilng and non-unventing operatoal annpliliet» (U8 Marks
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Module-3
a Convert:
d101101),(?)0 and (101.0D> (?)1
)(48.i50).o(?1(N
FA86)1s ( ()o
(08 Marks)
)(23), =(?)1» ()n
b. P'erform the subtraction
1) (22 - 17)1o by using l's complenient.
(1 1010) - (10000) by using 2's complement. (04 Marks)
1)
State and prove De-Morgan's theorems. (08 Marks)
OR
a. xplain the full adder cireuit with cireuit diagram. truth table. (05 Marks)
b W hat are universal gates" Realize AN) and OR gates using NAND gates (05 Marks)
Module-4
a. plain the operation ofNOR Latch with symbol, circuit diagram and truth table. (06 Marks)
b. xplain w ilh neat block diagram architecture of 8051 mierocontroller. (08 Marks)
(06 Marks)
c. xplain the working of elocked R$-flip, flóp us ing NAND-gates.
OR
W'rite a note on NANI)-gate latch. (06 VMarks)
With the help of block diagram, explain the microcontroller bascd stopper motor control
b
s steni. (08 VMarks)
C. xplain R-S Aip-flop with diagram and truth table. (06 larks)
Module-5S
9 a. With the he lp of block diagram, cexplain the communicat ion system. (06 Marks)
Define Modulation. Derive mathematical expression for amplitude modulation. draw
waveforms. (06 Marks)
C. Explain the construction and working principle ofLVDT. (08 Marks)
OR
10 a. A carrier of 1MIHz, with 400W of its power is amplitude modulated with a sinusoidal signal
of 2500H. The depth of modulation is 75%. Calculate the side band frequeney. Bandw idth.
the power in the side bands and the total power in the modulated wane (06 1arks)
b. I.ist 1he differcnces between Amplitude'Modulation and frequcncy modulaton (06 Marks
d I xplain the picezoclectrie transdueer and photo elcctric transducer. (08 larks
2 of 2
SMV
Note: Answer any FIVE full questions, choosing ONE full question from each module.
Module-1
1a Explain the diode characteristics under forward and reverse biased condition with neat
diagram. (06 Marks)
b. What is a voltage regulator? Explain with a neat diagram the work1ng of a zener volage
regulator. (06 Marks)
C. With a neat diagram and waveforms, explain the working of a bridge rectifier. Derive the
efticiency of this rectifier. (08 Marks)
OR
2 a. Explain the working of a centre tap full wave rectifier, with a neat diagram and waveform.
Derive the ripple factor for it. (08 Marks)
What is an LED? Explain the working of an LED, with a neat diagram. (06 Marks)
C. In the zener voltage regulator, Vz = 10V, Rs = 1 KQ, RL = 2 KQ. If the input voltage V, is
varied from 22 V to 40 V, find the maximum and minimum value of zener current. [Refer
Fig.Q2(c)
RS
M
V R
Fig.Q2(c) (06 Marks)
3 a.
Module-2
With a neat graph for the drain characteristics of an N channel JFET, explain the following:
(i) Cut-off voltage ii) ohmic region
(ii) Pinch off voltage (iv) Break-down (O8 arka)
b. What is commutation? Explain one method of commutation of an SCR with neat diagram.
(06 Marks)
For an n channel JFET, Ioss = 9 mA and Vosto)=-8 V (maxm), using these values
determine the drain current for VGS = OV; -1 V, and -4V. (06 Marks)
OR
4 . With neat circuit diagrams, explain the construction and operation of an enhancement type
MOSFET (08 Marks)
b. How is CMOS used as an inverter? Explain with neat diagram. (06 Marks)
C. Explain the switching action of an SCR using two transistor model. (06 Marks)
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18ELN14/24
Module-3 t
5 a. With neat diagrams and explanation analyze a differential input op-amp amplifier. (06 Marks)
h. With respect to an op-amp. explain the following and give their ideal values:
(1) CMRR
(ii) PSRR
(11) Input offset voltage
(iv) Input offset current (08 Marks)
With relevant diagram and derivation show how an op-amp can be used as mverting
(06 Marks)
summing amplifier (Adder).
OR
6 a. Explain how an op-amp can be used as a difference amplifier with neat diagram. (08 Marks)
b. For the circuit of the inverting amplifier shown in Fig.Q6(b), calculate the following:
(i) Closed loop gain Ar (ii) Output voltage Vo
(i) Input current I (iv) Feedback current I
0K
AV M
Module-4
7 a. How does a transistor voltage amplifier work? Explain and also derive the cquation for
voltage gain. (08 Marks)
b. With relevant diagrams and equations, explain the concept of positive and negative fecdback
amplifier concept. (06 Mark)
C. Determine the voltage gain and the ac output voltage if r'e = 50 Q for the circuit shown in
Fig.Q7(c). What value of Re will get a voltag gain of 50?
Re k
RB LVour
MA- Ve
VA 00
() VBB m
2 of 3
LIBRARY
18ELNI4/24
OR
ANTAK
a. How docs a transistor function like a switch? Explain with relevant diagrams. (06 Marks)
With a ncat circuit diagram. cxplain RC phase shift oscillator. Write the equation for the
frequeney of oseillation. (08 Marks)
C. With relevant diagram. explain the internal block diagram of IC 555 T1mer (06 Marks)
Module-5
d. Realize a full adder using two half adders. Derive the expression for sum and carry
(08 Marks)
b Convert the following as indicated:
() (FA C E)16= )
(ii) (1001101)2=
(11) (126)s = (
10
(iV) (l689)1o = ( (08 Marks)
16
Subtractl1010 from 10111 using 2's complement method. (04 Marks)
OR
(08 Marks)
10 a. With a neat diagram, explain the block diagram ofa GSM system.
circuit
(06 Marks)
and function table
b. Explain the working of a RS latch with neat diagram
c. Prove the following identities using truth table:
3 of3
SMV
Module-
1 a. Draw and explain the VI- characteristics of a PN-junction diode. (08 Marks)
b. With neat circuit diagram, explain the working principles of full wave bridge rectifier.
(08 Marks)
C. Derive the relationship between a and B. Also calculate the value of a and ß value ofa
transistor if lg = 100uA and Ic= 2uA. (04 Marks)
OR
2 a. With a neat diagram, explain the input and output characteristics of a transistor in common
base configuration. (08 Marks)
b. With neat diagram and wave forms, explain the working of a halfwave rectifier. (08 Marks)
c. Define i) Zener breakdown ii) Avalanche breakdown, (04 Marks)
Module-2
a. What is op-Amp? List the characteristics of an ideal op-amp. (06 Marks)
b. For the base bias circuit for npn transistor, findlp, Ic and VcE if Rc 2K2, Ra = 220K2,
B 60, VBE = 0.7V and Voc 18V.
(06 Marks)
C.
Explain with neat circuit diagram op-amp integrator. (08 Marks)
OR
4 a. With neat circuit diagram, explain the voltage divider bias circuit. (06 Marks)
b. Find the output voltage of a three input adder circuit in which Ri = R2 = R3 = 4KQ and
feedbackresistance Rp= 6KQ and given that Vi =4V, V2=-2V and V3 = 3V.
(05 Marks)
C. Explain briefly non-inverting, inverting and voltage follower circuit using operation
amplifier. (09 Marks)
Module-3
5 a. Convert the following
i) (69)10= (?)2 i) (101010101)2 (?)1o ii) FA876)16=()»
iv) (867)10- (?)8 v) (57345)io(?)16 vi) (BCDEh6= (?)s. (09 Marks)
b. State and prove De - Morgan's theorem for 2 variables with truth table.
(06 Marks)
c. Realize AND, OR, NOT using universal gates (05 Marks)
OR
6a. Explain half adder. Design the full adder cireuit by using two half adder circuits. (08 Mark
b. Simplify the following :
i) Y =ABCD+ABCD+ABCD+ ABCD
ii)Y = AB+ AC¥BD+CD (06 Marks)
C.
Perform the following
i) (22-17) by using 2's complement method
i)(11010110% (01000101h bv using l's
-
Module-4
7 a. What is the flip-flop? Explain with circuit diagram and truth table NOR gated SR - flip-flop.
(08 Marks)
b.
Explain the architecture of 8051 microcontroller. (12 Marks)
OR
8 a. With the help of block diagram, explain the micro controller baséd stepper motor control
system. (08 Marks)
b. With the diagram and truth table explain NAND gate latch.. (06 Marks)
c. Explain the register banks of 8051 microcontroller. (06 Marks)
Module-5
9 a. Explain the communication system with neat block'diagram. (08 Marks)
b. Explain the construction and working operation of linear variable differential transducer's.
(06 Marks)
C. is
AS00W IMHz carrier amplitude modulated with a sinusoidal
signal of IKHz, he depth
of modulation is 60%. Calculate the Bandwidth and power in the side band, sideband
frequencies and total power in the modulated wave. (06 Marks)
OR
10 a. Define modulation. Derive the mathematical expression for the amplitude modulation and
the wave forms. (08 Marks)
b. List the differences between amplitude modulation and frequency modulation.
(06 Marks)
c. What is transducer? Explain active transducer and pássive transducer.
(06 Marks)
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2 of 2
sMV
LIBRARY
18ELN14/24
USN
Note: Answer any FIVE full questions, choosing ONEfull question from each module.
Module-1
a. Explain the operation of PN junction diode under forward andreverse bias conditions.
(06 Marks)
b. A full wave bridge rectifier with an input of 1 00V (ms) feeds a load of I K , Vr = 0.7V,
i) If the diodes employed are silicon, what is the DC voltage across the load?
ii) Determine the PIV rating of each diodec
iii) Determine the maximum curent that each diode conducts and the diode power rating.
(06 Marks)
C. Write a short note on
i) Light emitting diode
ii) Photodiode
iii) Photo coupler. (08 Marks)
OR
a. What is Zener diode? With a neat circuit diagram, explain the operation of a voltage
regulator. (08 Marks)
b. A silicon diode has Is = 10nA at 25°C. Calculate Ip for a forward bias of0.6V. (04 Marks)
c. Define rectifier. Sketch a half wave rectifier with wavefoms derive the following:
i) Average voltage
ii) Average current
iii) Efficiency
iv) Ripple factor. (08 Marks)
Module-22
a. Explain the construction and operation of N-channel JFET (06 Marks)
b. With a neat diagram, explain the operation of CMOS inverter (08 Marks)
C. With a neat diagram, explain the VI characteristics of SCR. (06 Marks)
OR
a. Explain the characteristics of n-channel JFET. (06 Marks)
b. With a neat diagram, explain the characteristics of a enhancement type MOSFET
(N-channel) (08 Marks)
C. With neat diagram, explain the two transistor model of an SCR. (06 Marks)
Module-3
5 a. For an op-amp
i) List the characteristics of an ideal op-amnp
ii) Draw the three input summing circuit (inverting amplifier) and drive the expression for its
output voltage. (08 Marks)
b. Define the terms with respect to op-amp
i) Slew rate ii) CMRR ii) Common mode gain Acm or Ac of op-amp. (06 Marks)
. Design an adder circuit using an op-amp to obtain the output voltage of -(2V +3V2 + 5V;).
06 Marks
MVI
TM
LIBRARY
SANTAKA 18ELN14/24
OR
6 a. Draw the circuit ofnon-inverting op-amp. Derive the expression for its voltage gain.
(08 Marks)
b. With a neat cireuit diagrams, explain how an op-amp can be used as a :
i) differentiator ii) an integrator. (06 Marks)
C. Find the output Vo for the following op-amp circuit.
looK 40K
M-
Rok
V:Sv
-U
Fig.Q6(0) (06 Marks)
Module-4
7 a. What is an amplifier? Explain the operation of transistor amplifier circuit. (08 Marks)
b. Define feedback amplifier? With a necessary diagram and equation explain different types
of feedback. (12 Marks)
OR
8 a. Briefly explain how a transistor is used as an electronic switch. (06 Marks)
b. Explain how 555 timer can be used as an oscillator. (06 Marks)
c. Define an oscillator? Derive the equation for Wein bridge oscillator. (08 Marks)
Module-5
9 a. Convert the following:
i) (725.25)1o=(» = (?)16
OR
10 a. What is multiplex? Explain the workingof4: IMUX. (06 Marks)
b. With the help of a logic diagram and truth table, explain the working of a clocked SR flip-
flop. (06 Marks)
c. What is a shift register? Explain the working a 4-bit SISO shift register. (08 Marks)
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