S-LMBT3904LT1G General Purpose Transistors NPN Silicon
1. FEATURES SOT23(TO-236) ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring 3 COLLECTOR unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 BASE
2. DEVICE MARKING AND ORDERING INFORMATION 2 EMITTER
Parameter Symbol Limits Unit Collector–Emitter Voltage VCEO 40 V Collector–Base Voltage VCBO 60 V Emitter–Base Voltage VEBO 6 V Collector Current — Continuous IC 200 mA
4. THERMAL CHARACTERISTICS Parameter Symbol Limits Unit Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC Thermal Resistance, Junction–to–Ambient(Note 1) RΘJA 556 ºC/W Junction–to–Case(Note 1) RΘJC 300 ºC/W Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in.
Leshan Radio Company, LTD. Rev.D Dec. 2023 1/5
LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS Characteristic Symbol Min. Typ. Max. Unit Collector–Emitter Breakdown Voltage VBR(CEO) 40 - - V (IC = 1.0 mA, IB = 0) Collector–Base Breakdown Voltage VBR(CBO) 60 - - V (IC = 10 μA, IE = 0) Emitter–Base Breakdown Voltage VBR(EBO) 6 - - V (IE = 10 μA, IC = 0) Collector Cutoff Current ICEX - - 50 nA ( VCE = 30 V, VEB = 3.0V) Base Cutoff Current IBL - - 50 nA (VCE = 30 Vdc, VEB = 3.0Vdc) ON CHARACTERISTICS (Note 2.) DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) 40 - - (IC = 1.0 mA, VCE = 1.0 V) HFE 70 - - (IC = 10 mA, VCE = 1.0 V) 100 - 300 (IC = 50 mA, VCE = 1.0 V) 60 - - (IC = 100 mA, VCE = 1.0 V) 30 - - Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(sat) - - 0.2 V (IC = 50 mA, IB = 5.0 mA) - - 0.3 Base–Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VBE(sat) - - 0.85 V (IC = 50 mA, IB = 5.0 mA) - - 0.95 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT 300 - - MHz (IC = 10mA, VCE= 20V, f = 100MHz) Output Capacitance Cobo - - 4 pF (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance Cibo - - 8 pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 V,VBE=-0.5V, td - - 35 Rise Time IC = 10mA, IB1 = 1.0 mA) tr - - 35 ns Storage Time (VCC = 3.0 V, IC = 10 ts - - 200 Fall Time mA,IB1 = IB2 = 1.0 mA) tf - - 50 2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD. Rev.D Dec. 2023 2/5
LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon
6.ELECTRICAL CHARACTERISTICS CURVES
10 400 150℃ Cibo
300
HFE DC Current Gain
C,Capacitance(pF)
25℃
200
Cobo -55℃
100
1 0 0.01 0.1 1 10 100 0.1 1.0 10.0 100.0 VR.Verse Voltage(V) IC,Collector Current (mA) Capacitance DC Current Gain
0 0 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 IC, Colletor Current(A) IB, Base Current(mA) VBE(on) vs. IC Collector Saturation Region
600
500
400 Rthja (K/W)
300
200
100
0 6.0E-06 6.0E-04 6.0E-02 6.0E+00 6.0E+02 Time (s) Rthja
Leshan Radio Company, LTD. Rev.D Dec. 2023 4/5
LMBT3904LT1G, S-LMBT3904LT1G General Purpose Transistors NPN Silicon
7.OUTLINE AND DIMENSIONS
SOT23 DIM MIN NOR MAX A 0.89 - 1.12 A1 0.01 - 0.10 A2 0.88 0.95 1.02 b 0.30 - 0.50 b1 0.30 0.40 0.45 c 0.08 - 0.20 c1 0.08 0.10 0.16 D 2.80 2.90 3.04 E 2.10 - 2.64 E1 1.20 1.30 1.40 e 0.95BSC e1 1.90BSC L 0.40 0.46 0.60 L1 0.54REF θ 0º – 8º All Dimensions in mm
8.SOLDERING FOOTPRINT
SOT-23 DIM (mm) X 0.80 Y 0.90 A 2.00 B 0.95 C 0.95
Leshan Radio Company, LTD. Rev.D Dec. 2023 5/5
DISCLAIMER ● Curve guarantee in the specification. The curve of test items with electric parameter is used as quality guarantee. The curve of test items without electric parameter is used as reference only.
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● All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using LRC's Products,please confirm the latest information with a LRC sales represe- -ntative.
