PE5E6BA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 6mΩ @VGS = 10V 39A

100% UIS Tested

PDFN 3X3P 100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ±20
Tc = 25 °C 39
Continuous Drain Current4 ID
Tc = 100 °C 25
1 IDM
Pulsed Drain Current 100
A
4
TA = 25 °C 16
Continuous Drain Current ID
TA = 70 °C 13
Avalanche Current IAS 33
Avalanche Energy L =0.1mH EAS 54 mJ
TC = 25 °C 17.8
Power Dissipation
TC = 100 °C 7
PD W
3
TA = 25 °C 3
Power Dissipation
TA = 70 °C 2
Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient t ≦10s RqJA 40
2
Junction-to-Ambient Steady-State RqJA 60 °C / W
Junction-to-Case Steady-State RqJC 7
1
Pulse width limited by maximum junction temperature.
2
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
The Power dissipation is based on RqJA t ≦10s value.
4
Package limitation current is 13A.

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PE5E6BA
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.3 2 2.3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V, TJ = 55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 8.8A 6 9
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 11A 4 6
Forward Transconductance1 gfs VDS = 5V, ID = 11A 36 S
DYNAMIC
Input Capacitance Ciss 1004
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 324 pF
Reverse Transfer Capacitance Crss 190
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.8 Ω
Qg(VGS=10V) 23
Total Gate Charge2
Qg(VGS=4.5V) VDS = 15V , VGS = 10V, 13
nC
2 ID = 11A
Gate-Source Charge Qgs 2.4
Gate-Drain Charge2 Qgd 7.9
2 td(on)
Turn-On Delay Time 24
Rise Time 2 tr VDS= 15V, ID @ 11A, 25
nS
Turn-Off Delay Time 2 td(off) VGS = 10V, RGEN= 6Ω 50
Fall Time2 tf 22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
3 IS
Continuous Current 15 A
1 VSD IF = 11A, VGS = 0V
Forward Voltage 1.2 V
Reverse Recovery Time trr 21 nS
IF = 11A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 7.2 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 13A.

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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PE5E6BA
N-Channel Enhancement Mode MOSFET

A. Marking Information(此产品代码为：L3）

B. Tape&Reel Information:5000pcs/Reel

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

D.Label rule
标签内容(Label content)

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