2SC5296-datasheet__oook

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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5296

DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode

APPLICATIONS
·Designed for ultrahigh-definition CRT display horizontal
deflection output applicaitions

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current- Continuous 8 A

ICP Collector Current-Pulse 16 A

Collector Power Dissipation


3.0
@ Ta=25℃
PC W
Collector Power Dissipation
60
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5296

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V

ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA

ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 1.0 mA

IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 40 130 mA

hFE-1 DC Current Gain IC= 1A ; VCE= 5V 15 25

hFE-2 DC Current Gain IC= 5A ; VCE= 5V 4 7

Switching times; Resistive load

tstg Storage Time 3.0 μs


IC= 4A , IB1= 0.8A ; IB2= -1.6A
RL= 50Ω
tf Fall Time 0.2 μs

isc Website:www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5296

isc Website:www.iscsemi.cn

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