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Analog Assignment 3

Analog VLSI

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6 views

Analog Assignment 3

Analog VLSI

Uploaded by

simranjit28p
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Indian Institute of Technology

Roorkee

Analog VLSI Circuit Design


(ECC-537)
(Assignment-3)

Submitted to: Submitted by:


Dr Bishnu Prasad Das Simranjit Singh
24915017
PhD
Simranjit Singh 24915017

Assignment - 3
AIM: Transition Frequency “fT” Measurement
For NMOS transistor with W=4μm, obtain “fT” under the bias condition of Vgs
=1 V, Vds=1.8 V and AC signal amplitude = 1mV (You need to AC simulation)
1. Plot “fT” versus L; for L = 0.18μm, 0.25μm, 0.35μm, 1μm and 2μm.
2. Plot “fT” versus “(Vgs- vth)”; for Vgs = 0.4V to 1.8V with step of 0.2V and
L=0.18μm.
3. Plot “fT” vs “(gm/Id)”; for L = 0.18μm, 0.25μm, 0.35μm, 1μm and 2μm.

Schematic/Theory: An NMOS (N-channel Metal-Oxide-Semiconductor) transistor


is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used
in electronic circuits for switching and amplification. It has three terminals: the
gate (G), the drain (D), and the source (S). The operation of the NMOS transistor
is controlled by the voltage applied to the gate terminal relative to the source
terminal.

Working Principle

• Gate Voltage (Vgs): When a positive voltage is applied to the gate relative to the
source, it creates an electric field that attracts electrons to the channel, forming a
conductive path between the drain and source.
• Drain-Source Voltage (Vds): This voltage drives the current through the channel
from the drain to the source.

Transition Frequency(fT): The transition frequency, ofTen denoted as fT , is a key


parameter of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that
represents the frequency at which the current gain of the device drops to unity (1). In simpler
terms, it's the frequency at which the transistor stops amplifying signals effectively.
At frequencies below fT , the MOSFET can amplify signals, but as the frequency increases,
the capacitive effects (like the gate capacitance) become more significant, reducing the gain.
fT is an important metric in high-frequency applications, such as RF (Radio Frequency)
circuits, because it defines the upper limit of the transistor's useful frequency range.
Mathematically, fT can be expressed as:
𝑔𝑚
𝑓𝑇 =
2𝜋(𝐶𝑔𝑠 + 𝐶𝑔𝑑 )

where:
• gm is the transconductance of the MOSFET,
• Cgs is the gate-to-source capacitance,
• Cgd is the gate-to-drain capacitance.
In essence, fT gives an idea of the speed at which the MOSFET can operate efficiently.
Fig 1: Schematic of NMOS Transistor

Procedure: Following is the procedure:

1. In schematic window make the required schematic using scl and analoglib libraries.

2. At the gate provide ac voltage along with dc. Make the gate length variable.

3. In ADE L use ac analysis. Plot Id vs Vgs and Ig vs Vgs graphs.

4. Take both the plots to the calculator to get the gain Id/Ig.

5. Use unity gain function in calculator to get the value of transition frequency.

6. Using parametric analysis, we get the graph for fT vs given lengths

7. For fT vs (Vgs-Vth) plot we can use wavevsWave function in the calculator.

8. For this plot we must go with dc analysis.

9. Finally fT vs gm/Id plot can also be plotted using wavevsWave function of the calculator
1. Plot “fT” versus L

Fig 2: fT vs Length Plot

2. Plot fT versus (Vgs- vth)

Fig 3: fT versus (Vgs- vth) Plot


3. Plot fT vs (gm/Id)

Fig 4: Plot fT vs (gm/Id) Plot

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