25AA080C/D, 25LC080C/D: 8K SPI Bus Serial EEPROM
25AA080C/D, 25LC080C/D: 8K SPI Bus Serial EEPROM
Features: Description:
• Max. Clock 10 MHz The Microchip Technology Inc. 25AA080C/D,
• Low-Power CMOS Technology: 25LC080C/D (25XX080C/D*) are 8 Kbit Serial Electri-
- Max. write current: 5 mA at 5.5V cally Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
- Read current: 5 mA at 5.5V, 10 MHz
serial bus. The bus signals required are a clock input
- Standby current: 5 A at 5.5V (SCK) plus separate data in (SI) and data out (SO)
• 1024 x 8-bit Organization lines. Access to the device is controlled through a Chip
• 16 Byte Page (‘C’ version devices) Select (CS) input.
• 32 Byte Page (‘D’ version devices) Communication to the device can be paused via the
• Self-Timed Erase and Write Cycles (5 ms max.) hold pin (HOLD). While the device is paused, transi-
• Block Write Protection: tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
- Protect none, 1/4, 1/2 or all of array
interrupts.
• Built-In Write Protection:
The 25XX080C/D is available in standard packages
- Power-on/off data protection circuitry
including 8-lead PDIP and SOIC, and advanced pack-
- Write enable latch aging including 8-lead MSOP, TSSOP, and 2x3 TDFN.
- Write-protect pin All packages are Pb-free and RoHS compliant.
• Sequential Read
• High Reliability: Package Types (not to scale)
- Endurance: > 1M erase/write cycles
- Data retention: > 200 years TSSOP/MSOP PDIP/SOIC
(ST, MS) (P, SN)
- ESD protection: > 4000V
CS 1 8 VCC CS 1 8 VCC
• Pb-Free and RoHS Compliant SO 2 7 HOLD
WP 3 6 SCK SO 2 7 HOLD
• Temperature Ranges Supported: VSS 4 5 SI WP 3 6 SCK
- Industrial (I): -40C to +85C
VSS 4 5 SI
- Automotive (E): -40°C to +125°C
TDFN
(MN)
CS 1 8 VCC
SO 2 7 HOLD
WP 3 6 SCK
VSS 4 5 SI
Param.
Sym. Characteristic Min. Max. Units Test Conditions
No.
Param.
Sym. Characteristic Min. Max. Units Test Conditions
No.
17 THH HOLD Hold Time 20 — ns 4.5V VCC 5.5V
40 — ns 2.5V VCC 4.5V
80 — ns 1.8V VCC 2.5V
18 THZ HOLD Low to Output 30 — ns 4.5V VCC 5.5V (Note 1)
High-Z 60 — ns 2.5V VCC 4.5V (Note 1)
160 — ns 1.8V VCC 2.5V (Note 1)
19 THV HOLD High to Output 30 — ns 4.5V VCC 5.5V
Valid 60 — ns 2.5V VCC 4.5V
160 — ns 1.8V VCC 2.5V
20 TWC Internal Write Cycle Time — 5 ms (Note 2)
21 — Endurance 1M — E/W 25°C, VCC = 5.5V (Note 3)
Cycles
Note 1: This parameter is periodically sampled and not 100% tested.
2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is
complete.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
CS
17 17
16 16
SCK
18 19
High-Impedance
SO n+2 n+1 n n n-1
Don’t Care 5
SI n+2 n+1 n n n-1
HOLD
CS 12
2 11
7
Mode 1,1 8 3
SI MSB in LSB in
High-Impedance
SO
CS
9 10 3
Mode 1,1
SCK Mode 0,0
13
14 15
Don’t Care
SI
Memory EEPROM
I/O Control X
Control Array
Logic
Logic Dec
Page Latches
SI
SO Y Decoder
CS
SCK
HOLD Sense Amp.
R/W Control
WP
VCC
VSS
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Data Out
High-Impedance
SO 7 6 5 4 3 2 1 0
CS
Twc
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction 16-bit Address Data Byte
SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26 27 28 29 30 31
SCK
Instruction 16-bit Address Data Byte 1
SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0
CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
Data Byte 2 Data Byte 3 Data Byte n (16/32 max)
SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 1 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7
SCK
SI 0 0 0 0 0 1 10 0
High-Impedance
SO
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
Instruction
SI 0 0 0 0 0 1 0 1
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SCK
SI 0 0 0 0 0 0 0 1 7 6 5 4 3 2 1 0
High-Impedance
SO
WEL WPEN WP
Protected Blocks Unprotected Blocks STATUS Register
(SR bit 1) (SR bit 7) (pin 3)
0 x x Protected Protected Protected
1 0 x Protected Writable Writable
1 1 0 (low) Protected Writable Protected
1 1 1 (high) Protected Writable Writable
x = don’t care
A low level on this pin selects the device. A high level 3.6 Hold (HOLD)
deselects the device and forces it into Standby mode.
However, a programming cycle which is already The HOLD pin is used to suspend transmission to the
initiated or in progress will be completed, regardless of 25XX080C/D while in the middle of a serial sequence
the CS input signal. If CS is brought high during a without having to retransmit the entire sequence again.
program cycle, the device will go into Standby mode as It must be held high any time this function is not being
soon as the programming cycle is complete. When the used. Once the device is selected and a serial
device is deselected, SO goes to the high-impedance sequence is underway, the HOLD pin may be pulled
state, allowing multiple parts to share the same SPI low to pause further serial communication without
bus. A low-to-high transition on CS after a valid write resetting the serial sequence. The HOLD pin must be
sequence initiates an internal write cycle. After power- brought low while SCK is low, otherwise the HOLD
up, a low level on CS is required prior to any sequence function will not be invoked until the next SCK high-to-
being initiated. low transition. The 25XX080C/D must remain selected
during this sequence. The SI, SCK and SO pins are in
3.2 Serial Output (SO) a high-impedance state during the time the device is
paused and transitions on these pins will be ignored. To
The SO pin is used to transfer data out of the resume serial communication, HOLD must be brought
25XX080C/D. During a read cycle, data is shifted out high while the SCK pin is low, otherwise serial commu-
on this pin after the falling edge of the serial clock. nication will not resume. Lowering the HOLD line at any
time will tri-state the SO line.
3.3 Write-Protect (WP)
This pin is used in conjunction with the WPEN bit in the
STATUS register to prohibit writes to the nonvolatile
bits in the STATUS register. When WP is low and
WPEN is high, writing to the nonvolatile bits in the
STATUS register is disabled. All other operations
function normally. When WP is high, all functions,
including writes to the nonvolatile bits in the STATUS
register operate normally. If the WPEN bit is set, WP
low during a STATUS register write sequence will
disable writing to the STATUS register. If an internal
write cycle has already begun, WP going low will have
no effect on the write.
XXXXXXT 5L8DI
YWWNNN 9281L7
XXXXXXXX 25LC080D
T/XXXNNN I/P e3 1L7
YYWW 0928
XXXXXXXT 25LC08DI
XXXXYYWW SN e3 0928
NNN 1L7
XXXX 5L8D
TYWW I628
NNN 1L7
XXX C44
YWW 928
NN 17
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
NOTE 1
E1
1 2 3
D
E
A A2
A1 L
c
e
b1 eB
b
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A – – .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015 – –
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB – – .430
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
8-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm Body [TSSOP]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
NOTE 1
1 2
b
e
c
A A2 φ
A1 L1 L
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.65 BSC
Overall Height A – – 1.20
Molded Package Thickness A2 0.80 1.00 1.05
Standoff A1 0.05 – 0.15
Overall Width E 6.40 BSC
Molded Package Width E1 4.30 4.40 4.50
Molded Package Length D 2.90 3.00 3.10
Foot Length L 0.45 0.60 0.75
Footprint L1 1.00 REF
Foot Angle φ 0° – 8°
Lead Thickness c 0.09 – 0.20
Lead Width b 0.19 – 0.30
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Revision A (4/2009)
Original release of this document.
Revision B (12/2012)
Revised Table 1-2, Param. 21.
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