tp 3 OTS
tp 3 OTS
tp 3 OTS
Date : 20/11/2023
-Writing the code and evaluates the operating point and the and the small signal parameters
using the output file :
2.5mA
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V
ID(M1)
VDS
Graph interpretation :
The graphic interpretation of Id (drain current) vs. VDS (drain-source voltage) at a constant
VGS (gate-source voltage) for an NMOS (n-type MOS) transistor typically shows three distinct
regions: cutoff, triode (or linear), and saturation
Labelling the regions of operation :
-saturation region : the MOSFET is fully on, and Id becomes relatively constant with respect
to the drain-source voltage VDS this state is achived when VGS is sufficiently high
VGS>=VTH and VDS>=VGS-VTH so VGS>=2V and VDS<=1.2V
-Triode (or linear regoin) : this region is between cut-off and saturation region.ID varies in
response to changes in VDS and the MOSFET is in an amplification mode VGS>=VTH and
VDS<=VGS-VTH so VGS>=2V and VDS>=1.2V
-cut-off region : The MOSFET is off and the current drain is minimal and VGS is below the
threshold voltage VGS<VTH so VGS<1.2
-Graph interpretation :
The current transfer characteristic (ID vs VGS) of a MOSFET illustrates the relationship
between drain current (ID) and gate-source voltage (VGS). Key points include the threshold
voltage (Vth) marking the onset of conduction, the triode region with linear ID-VGS
relationship, saturation region with relatively constant ID, and potential velocity saturation
effects. Understanding this characteristic is vital for designing and analyzing MOSFET circuits,
influencing the operating region and performance in applications ranging from amplifiers to
digital logic gates.
The subthreshold : region in a MOSFET refers to the operating regime where the voltage
applied to the gate is below the threshold voltage (Vt), which is the minimum voltage
required to turn the transistor on. In this region, the MOSFET is in a state of weak inversion,
and the current between the source and drain terminals is very low SO VG<2V
Linear Region: This is a mode of operation where the transistor is in between fully on
(saturation) and fully off (cutoff). In the linear region, the transistor acts like a variable
resistor, and there is a linear relationship between the input voltage and the output current
SO VGS>2V
Quadratic (or Saturation) Region: When referring to the saturation region of a transistor, it
means the transistor is fully on, and there is a quadratic relationship between the input
voltage and the output current. In this region, the transistor is used as an amplifier, and it is
saturated with charge carriers so VGS>2V
7. the network IDS vs VDS for each VGS value 1V, 3.2V, 4V
12m
8m
4m
0
0V 2V 4V 6V 8V 10V 12V 14V 16V
ID(M1) ((15-VDS)/(2k))
VDS
Graph interpretation :
-We conclude that the saturation value of the
10V
5V
0V 2V 4V 6V 8V 10V 12V 14V 16V
V(4)
Calculate the gain : V(2)
AV=(12-14.1)/(6-3.33)=0.78
-using the .AC analysis and changing the MOSFET with by IRF150 and finding the voltage gain and
bandwidth from the plot
100mV
1 2
0V
>>
-100mV
0s 0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms 4.5ms 5.0ms
2 V(1) V(5)
Time
Calculate the gain and bandwith
Graph interpretation :
The N-type MOSFET amplifier graph includes output characteristics (showing how drain current varies
with drain-to-source voltage) and transfer characteristics (illustrating the relationship between drain
current and gate-to-source voltage). These graphs help understand the MOSFET's amplification
behavior, with the saturation region indicating active amplification and the cutoff region representin
transistor turn-off. Analyzing these characteristics is crucial for designing and optimizing N-type
MOSFET amplifiers.
Conclusion :
In conclusion, practical work with N-type MOSFET transistors involves exploring their operating
characteristics, amplification performance, biasing effects, stability considerations, power dissipation,
and practical applications. Understanding these aspects provides valuable insights for designing
circuits, optimizing performance, and making informed decisions about the transistor's use in various
electronic applications.