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4th year µElec

Main editor : BENDIB TOUFIK

Group : - AIT MOHAMED SAID SAMI

Date : 20/11/2023

Pratical work N°3 : PSPICE SIMULATION OF N_MOS


V.Static simulation
1-Creating the PSpice model for this MOSFET using .model statement

-Writing the code and evaluates the operating point and the and the small signal parameters
using the output file :

Lambda VGS VDS VTH VDSAT IDSAT GM GDS W/L


[ V-1 ] [V] [V] [V] [V] [mA] [mS] [mS]
0 3.2 6.4 2 1.2 4.30 7.19 0 3
-IDSAT equals to 4.30mA because VDS>VGS-VTH
2-Changing the transistor geometry and the bias voltage VCC in order to adjust the operating
point to a current IDSAT equal to 8.6mA while VDSat remains constant.
-Calculate the new VCC

VCC=R1* IDSAT+VDS+ R4* IDSAT SO : VCC= 2*8.6+6.4=23.6


-Calculate the new geometry parameters :
W2/L2 = (W1/L1)*(IDSAT2/ IDSAT1)=(3)*(8.6/4.3)=6
SO : W2/L2 = 6

3-plotting the characteristic IDS vs VDS using .DC analysis


5.0mA

2.5mA

0A
0V 2V 4V 6V 8V 10V 12V 14V 16V
ID(M1)
VDS
Graph interpretation :
The graphic interpretation of Id (drain current) vs. VDS (drain-source voltage) at a constant
VGS (gate-source voltage) for an NMOS (n-type MOS) transistor typically shows three distinct
regions: cutoff, triode (or linear), and saturation
Labelling the regions of operation :
-saturation region : the MOSFET is fully on, and Id becomes relatively constant with respect
to the drain-source voltage VDS this state is achived when VGS is sufficiently high
VGS>=VTH and VDS>=VGS-VTH so VGS>=2V and VDS<=1.2V
-Triode (or linear regoin) : this region is between cut-off and saturation region.ID varies in
response to changes in VDS and the MOSFET is in an amplification mode VGS>=VTH and
VDS<=VGS-VTH so VGS>=2V and VDS>=1.2V
-cut-off region : The MOSFET is off and the current drain is minimal and VGS is below the
threshold voltage VGS<VTH so VGS<1.2

Operating the point Q VDS=0.723V & ID=7mA


6-Plotting the characteristic IDS vs VGS using .DC analysis command (log scale)

-Graph interpretation :
The current transfer characteristic (ID vs VGS) of a MOSFET illustrates the relationship
between drain current (ID) and gate-source voltage (VGS). Key points include the threshold
voltage (Vth) marking the onset of conduction, the triode region with linear ID-VGS
relationship, saturation region with relatively constant ID, and potential velocity saturation
effects. Understanding this characteristic is vital for designing and analyzing MOSFET circuits,
influencing the operating region and performance in applications ranging from amplifiers to
digital logic gates.

The subthreshold : region in a MOSFET refers to the operating regime where the voltage
applied to the gate is below the threshold voltage (Vt), which is the minimum voltage
required to turn the transistor on. In this region, the MOSFET is in a state of weak inversion,
and the current between the source and drain terminals is very low SO VG<2V
Linear Region: This is a mode of operation where the transistor is in between fully on
(saturation) and fully off (cutoff). In the linear region, the transistor acts like a variable
resistor, and there is a linear relationship between the input voltage and the output current
SO VGS>2V
Quadratic (or Saturation) Region: When referring to the saturation region of a transistor, it
means the transistor is fully on, and there is a quadratic relationship between the input
voltage and the output current. In this region, the transistor is used as an amplifier, and it is
saturated with charge carriers so VGS>2V
7. the network IDS vs VDS for each VGS value 1V, 3.2V, 4V
12m

8m

4m

0
0V 2V 4V 6V 8V 10V 12V 14V 16V
ID(M1) ((15-VDS)/(2k))
VDS

Graph interpretation :
-We conclude that the saturation value of the

current id increases when the value of VGS


increases and the current value increase
when VDS increase until reaching saturation.
-The specific equations governing these
relationships can be quite intricate and

are often determined by the transistor's


characteristics and the technology it is
based on. This behavior is essential in the
analysis and design of electronic circuits using MOS transistors.
VDS IDS
[V] [mA]
Q1 0.723 7
Q2 6.36 4.32

IV.2 MOSFET APPLICATION


-we were using .OP analysis so we dont need to delete the capacitors from our circuits

Pollting the characterstic tranfser :


15V

10V

5V
0V 2V 4V 6V 8V 10V 12V 14V 16V
V(4)
Calculate the gain : V(2)

AV=(12-14.1)/(6-3.33)=0.78

-using the .AC analysis and changing the MOSFET with by IRF150 and finding the voltage gain and
bandwidth from the plot

100mV
1 2

0V

>>
-100mV
0s 0.5ms 1.0ms 1.5ms 2.0ms 2.5ms 3.0ms 3.5ms 4.0ms 4.5ms 5.0ms
2 V(1) V(5)
Time
Calculate the gain and bandwith

AV = corresponding to 1KHZ which is AV=5.75

Bandwidth: between 100hz and 5MHZ

Graph interpretation :

The N-type MOSFET amplifier graph includes output characteristics (showing how drain current varies
with drain-to-source voltage) and transfer characteristics (illustrating the relationship between drain
current and gate-to-source voltage). These graphs help understand the MOSFET's amplification
behavior, with the saturation region indicating active amplification and the cutoff region representin

transistor turn-off. Analyzing these characteristics is crucial for designing and optimizing N-type
MOSFET amplifiers.

Conclusion :
In conclusion, practical work with N-type MOSFET transistors involves exploring their operating
characteristics, amplification performance, biasing effects, stability considerations, power dissipation,
and practical applications. Understanding these aspects provides valuable insights for designing
circuits, optimizing performance, and making informed decisions about the transistor's use in various
electronic applications.

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