Chapter 3 Solutions

Prob. 3.1
Calculate the approximate donor binding energy for GaAs ( e r = 13.2, m* = 0.067 m0).
From Equation 3-8 and Appendix II,
m
T3 _ I-q 4 _ 0.067-(9.11-10-31kg)-(1.6-10"19C)4
8.34-10'22J = 5.2 meV
8-(e 0 e r ) 2 -h 2 8-(8.85-10 -12 ^ -13.2) 2 -(6.63-10¾) 2

Prob. 3.2
Plot Fermi function for Ep—leV and show the probability of an occupied state AE above Ep is
equal to the probability of an empty state AE below Ep so f(EF + AE) = 1 -f(EF -AE).

1
use f(E) = E-E F
and kT=0.0259eV
1+e
E(eV) (E-EF)/kT f(E)
0.75 -9.6525 0.99994
0.90 -3.8610 0.97939
0.95 -1.9305 0.87330
0.98 -0.7722 0.68399
1.00 0.0000 0.50000
1.02 0.7722 0.31600
1.05 1.9305 0.12669
1.10 3.8610 0.02061
1.25 9.6525 0.00006

occupation probability above EF = f(EF+AE) = —

l+ew
1
empty probability below EF = 1 - f(EF- AE) - 1 -
1+e 1 ^
-AE
»kT
1 1 1
l-f(E F -AE) = l - -AE -AE AE AE = f ( E F + A E )
kT kT kT
l+e l+e e +l l+ekT

This shows that the probability of an occupied state AE above Ep is equal to the probability
of an empty state AE below EF.
Prob. 3.3
Calculate electron, hole, and intrinsic carrier concentrations.
15
E g =l.leV ,„ =N
N _,„ ,-,=m 1 5J_
n=10 ^- E c -E d =0.2eV Ec-EF=0.25eV T=300K
C V

n=10 1 5cm^
Er-EF Er-EF 0.25eV
kT
n = Nr-e ->Nr=n-ekT = 10^-6^^=1.56-1019^
° *- cm cm
N v = 1.56-1019 ^ r
v
cm
E F -E V 0.85eV
kT
p = N v -e"
r v
=1.56-10^-^-6^-^^=8.71-104^
cm cm
( Eg \
nj = yn-p = 9 . 3 5 - 1 0 9 ^ note: n ; = yjNc -N v -e 2kT
may also be used
V

Prob 3.4
Find temperature at which number of electrons in T and X minima are equal.
XT 9^1
-^- =—^Le kT from Equation 3-15
nr Ncr
Since there are 6 X minima along the <1 0 0> directions, Equation 3-16b gives:
2 I

N c X *6-(m e X ) 2 cx 6-(0.30)2

N c r ^ ( m e r ) 2 ^ (0.065)2
3

S
nx 6-(0.30) -°-§f
-JL = —- ^-e kT = 1 for n r = n x
n^ (0.065)

.92. ( 0 .065) ass 6 . ( 0 - 3 0 )

H
e = -i '— -> e kT = —^ '— = 59.4
6-(0.30)2 (0.065)2

° ^ = ln(59.4) = 4.09 -+ kT = ™™- = 0.0857eV

kT 4.09
T = 988K
Prob. 3.5
Discuss m*for GaAs and GaP. What happens if a Y valley electron moves to the L valley?
From Figure 3.10, the curvature of the V valley is much greater than L or X. Thus T valley
electrons have much smaller mass. The light mass V electrons in GaAs (/Xn=8500) have
higher mobility than the heavy mass X electrons (/Xn=300) in GaP since /½ is inversely
proportional to m*. If light mass electrons in T were transferred to the heavier mass L
valley at constant energy, they would slow down. The conductivity would decrease (see
discussion in Section 10.3).

Prob. 3.6
Find Eg for Si from Figure 3-17.
Inn
fornjj andn^ on graph

n;i =3-1014 — =2-10' 3 ^

ni2 = 10s :4-10^

This result is approximate because the temperature

dependences of N c , N v , and E are neglected.

n; =JN3Ve" 2 k T -• E =-2kT-ln . n; -»• Inn,- + InV^N,

V 2kT
/ A f
E. ( 1 P
In —— =\n.-a.{l- lnn^ + InV^N; + lnVNcNv
n
i2 v 2kT, V 2k
T2 J
2k T T

3-1014
n„ In
for Si (see above) -» E = 2k • = 2-8.62-1014 • 108 = 1.3eV
3
4-10 -3 ^ -2-10r- Kl
VT2 T
l /
Prob. 3.7
(a) FindNd for Si with 10 cm' boron atoms and a certain number of donors so
EF-Et=0.36eV.

kT
n =n,e
0.36eV
n0 =N d - N . -> N d =n 0 +N a = n i e « ' +N £ = 1.5-10I0-^T-e00259eV + 10 16 -½ = 2.63-1016 ^ r

(b) Si with 10 cm' In and a certain number of donors has EF-EY=0. 2 6eV. How many In atoms
are unionized (i.e.: neutral)?
1 1
fraction of Ea states filled = f(Ea) = Ea-EF 0.26eV-0.36eV
= 0.979
kT 0259eV
1+e 1+e -
unionizedIn = [l-f(E a ) ]-N t o = 0 . 0 2 1 - 1 0 ^ =2.1-10 14
16 i
3
cm

Prob. 3.8
Show that Equation 3-25 results from Equation 3-15 and Equation 3-19. Find the position of the
Fermi level relative to Ei at 300Kfor no=10 cm .

E,
0.347eV
Et

0.55eV

(E c -Ep)
kT
Equation 3-15 -> n 0 =N c -e
Er-EB Ep-E; Ep-E; E E -E:
kT kT kT kT
n0=Nc-e = Nc-e -e = nj-e using 3-21 yields Equation 3-25 a
Ep-Ey
= kT
Equation 3-19 -> p 00 N v •e
•'•''V

Ep-Ev Ef-Ev E(-E F E,--E«

=N e kT : kT , kT kT
Po v- N„-e P =
nd -e using 3-21 yields Equation 3-25b
16
for Fermi level relative to Ei at 300K for no=10 cm
1 5-1010
E F -R =0.0259eV-ln -— = 0.347eV
101
Prob. 3.9
Find the displacement of E{ from the middle ofEgfor Si at 300Kwith mn=l.lm0 and mp=0.56mo,
Ej is not exactly in the middle of the gap because the density of states Nc and Nv differ.
E c -Ej J5g_
kT 2kT
Nc • e = ^/N c • N v • e since each equal to n ; in Equation 3-21 and Equation 3-23
-E r -E:+J-
L
' 2
/ * v„
kT (
Nr vmv
- ^ - v(Ecc +E, ;;) =kT — -In—f = 0 . 0 2 5 9 e V - - - l n — =-0.013eV for Si at 300K
2 4 m! 4 1.1
So, Ei is about one half kT below the center of the band gap.

Er

Es/2 E,

E,

Prob. 3.10
I f 3

Is Si doped with 10 donors per cm n-type at 400K? Is Ge?

At T=400K, Figure 3-17 indicates that n > n; for Si doped with Nd = 1013 cm ; so, the Si would
15
be n-type. At T=400K, Figure 3-17 indicates that n =n; «10° cm"J for Ge doped with Nd = 10us
3
cm" ; so, the Ge would require more donors for useful n-type doping.
Prob. 3.11
Calculate electron, hole, and intrinsic carrier concentrations. Sketch band diagram.
Nc-1019^ ^=5-1018^ E=2eV T=627°C=900K n=10 17 -V
cm'
Er-EF
kT
r \ ^10 17 ^
n = Nc-e -+ EC-EF = -k-T-ln n = -0.078eV-ln = 0.36eV
vN c y > 1019 ,
E F -E V = [(E C -E V )-(E C -E F )] = [E g -(E C -E F )] = [2eV-0.36eV] = 1.64eV
E F -E V 1.64eV
kT
p = N v -e" 5 - 1 0 1 8 ^ ^ °-078eV = 3.7-109-½
cm cm
f _ Eg A
2kT
n ; =yjn^p = 1.9-10,13 1_ note: n ; = ^ N c • N v • e may also be used
v
-C ">
0.36eV

>2eV
1.64eV

• E V ^
Prob. 3.12
!
(a) Show that the minimum conductivity of a semiconductor occurs when ° ' V ^ ^H"

o = q-(n-n n +p-n ) = q n,-

n
V ,
r 2 A

= q-
n 0 for minimum conductivity at electron concentration nE
dn V n
y

2 2 r^p / f~p
n = n •—*-
"n
—>• n • = n - '
mm l mm

(b) What is ami„.

n- = 2-q-n r ^ n -n p
°"min = q - 1 ^ - ^ + ^ - ^ = q- n ; •^P
n U
min y n /Up
n;

(¾) Calculate omm and ff/ ybr 5Y.

0 ^ = 2 ^ - ^ - 7 0 ^ = 2-1.6-10-^.1.5-10^^.71350^.480^=3.9.10- •6 1
Q-cm

a ^ q - ( ^ . ^ + ^ . ^ ) = 2 . 1 . 6 . 1 -19r< ^1 ^ . ( 1 3 5 0 ^ . 4 8 0 ^ ) = 4 . 4 - 1 0 - 6 ^
0 - ^ .11 C. 5I-Q1l O0cm 3

or the reciprocal of pi in Appendix III may be taken

Prob. 3.13
(a) Find the current at 300Kwith 10Vappliedfor a Si bar 1 \an long, 100 \tm2 in cross sectional
area, and doped with 10 cm antimony.

With, £ = — - — = 105 -%- the sample is in the velocity saturation regime.

From Figure 3-24, v s = 107 *f.

I = q - A - n - v = 1 . 6 - 1 0 - 1 9 C - 1 0 " 6 c m 2 - 1 0 1 7 ^ y l 0 7 ^ =0.16A
1 s s
cm

(b) In pure Si, find time for an electron to drift 1pm in an electric field of 100-^ ? For 105£ ?

from Appendix HI, p,n = 1350f£

v d = ^ - 8 = 1 3 5 0 ^ - 1 0 0 ^ = 1.35-10 5 ^
low field: L lO^cm n A 1A . l0 nnA
t= — = — = 7.4-10 10s = 0.74 ns
vd 1.35-105 ^f
scattering limited velocity v s = 107 *f-fromFigure 3-24
high field: L !Q-4cm n
t = — = — -7 — = 10 s = 10 ps
vd 10 Jf

Prob. 3.14
(a) Find n0 and pfor Si doped with 10 cm' boron.

N a » n ; so p 0 = N a = 10 -~ may be assumed
n2 0 1 0J^_ )\ 2
( 1 . 5 - 1-»10
"o „ 1
-, rill i
cm" = 2.25-10 3 ^ r
Po 10 cm
N a = 1017 ^ - gives n p = 250&fc from Figure 3-23
a = q-ti p -p o = 1.6-10- 1 9 C-250ff-10 1 7 ^ = 4 . o _ i _

p= — = =0.25Q-cm

(b) Find n0for Ge doped with 3-10 Sb atoms per cm .

n2
Assuming N a is zero and using Equation 3-28 gives n 0 = — + N d or n 2 - N d • n 0 - n 2 = 0.
0

By quadratic formula,
N„ ± j N 2 + 4 - n 2 3-10 1 3 ^r± . / ( 3 - 1 0 ^ ^ + 4 - ( 3 - 1 0 1 3 ^ ) 2
1 X1
n _ d V d i _ cm3 Vv cm3 ' v
cm 3 ; —44.1Q13 1
2 2 • ' cm3
Prob. 3.15
Find the current density for applied voltages 2.5 V and 2500V respectively.
For 2.5V,
a = q-nn-n0(sinceno»ni) = 1.6-10-19C1500^.1015-^=0.24^
1 1
p =— = 4.17Q-cm
24
* °- ain
_ p-L _ 4.17Q-cm-5-10- 4 cm _ 2.83-103Q-cm2
R
A A
I V 2.5V
= 8.82-10-2 A for 2.5V
A R-A 2.83-103Q-cm2

For 2500V, £ = ———,— = 5 • 106 -^- which is in the velocity saturation regime.
S-lO^cm
— = q-n-v = 1.6-10" 19 C-10 15 ^r-10 7 ^=1.6-10 3 ^
s s
A cm cm

Prob. 3.16
Draw a band diagram and give the wave function at D in terms of the normalization constant.

^3eV

General Wavefunction: *F(x,t) = a • e

h 2 -k 2
EnergyatD = h-a)= = 3eV + 4eV = 7eV = 7eV-1.6-10-19 -h
eV
= 1.12-10"18J
2-m 0
1.12-10"18J 1.12-10~18J
co = 1.06-1016 Hz
h 1.06-10-j4J-s
/l.l2-10- 1 8 J-2-m7_ /l.l2-10-18J-2-9.11-10-31kg _ 10 ,
2 34 2 m
V h i (1.06-10- J-s) ^ °

Wavefunction at D: Y(x,t) = a • el(1'35'10 m'x"106'10 ^ where a is the normalization constant

Prob. 3.17
Show the electron drift velocity in pure Si for 100£- is less than vth. Comment on the electron
drift velocity for 104 -^-.

vd = S-u.n = 1 0 0 ^ - 1 3 5 0 ^ = 1.35-10 5 ^
/2kT
imX=kT -+ v a = =9.54-10 6 ^
V mo
so, vd < vft for 1 0 0 ^

For 104 -^, the equivalent calculation for drift velocity assuming constant ^ gives 1.35-107 <f
which is larger than the thermal velocity. The device is in velocity saturation.

Prob. 3.18
Plot mobility versus temperature.

"\Q ^ I i i i t i | i i i i i ; i i i i i I i i i i i I i i i i i

0 100 200 300 400 500

Temperature (K)
Prob. 3.19
Repeat plot of mobility versus temperature in 3.18 considering carrierfreeze out.

e
10 .

- S " N d = 1 0 1 4 cm' 3
10 -.
- • " N d = 1 0 1 6 cm' 3
- O . N d = 1 0 1 8 cm' 3

10--=

8 3
3 10 J -

10 i i i i
•nrr i ii iI i' » • • » ii i i i i i i i i i

100 200 300 400 500

Temperature (K)

When freeze-out occurs, ionized impurity scattering disappears, and only the phonon scattering
remains. In Si, other mechanisms, including neutral impurity scattering, contribute to mobility.
Prob. 3.20
Find the hole concentration and mobility with Hall measurement on ap-type semiconductor bar.
The voltage measured is the Hall voltage plus the ohmic drop.
The sign of VH changes with the magnetic field, but the ohmic voltage does not.

_ v m - v m _ 3.2mV - (-2.8mV)
V,Hall 2 2
3.0mV
ohmic drop = 3.2mV-3.0mV = 0.2mV

L-B. 3-10~3A-10~4^-
Po (Equation 3-50) = iy J J
= 3.125 - 1 0 1 7 ^
q-t-v,AB 1.6-10" C-2-10" cm-3-10- V
V -w-t _ . „ ri. 2-10*V-5-10"2cm-2-10"3cm nMn„
p = - ^CD (Equation 3-51) = : — - rJ — ; = 0.033Q-cm
3-10~ A-2-10"*cm
o 1 1i
Vr,
= 600—
q-po q-p-Po 1.6-10" C-0.033Q-cm-3.125-1017 ^ r
19 v
"

Prob. 3.21
Find VffWith Hall probes misaligned.
Displacement of the probes by an amount 5 give a small IR
drop V§ in addition to VH. The Hall voltage reverses when
the magnetic field is reversed; however, Vs does not depend
on the direction of the magnetic field.

:
for positive magnetic field: V ^ VH+V,
for negative magnetic field: V^, = -VH + Vs
V
AB V^=2-VH
V+ - V"
vu V
AB V
AB

So, the true Hall voltage may be obtained by subtracting

the voltage with a negative magnetic field from the voltage
with a positive magnetic field and dividing by 2.
Prob. 3.22
Find expected resistivity and Hall voltage.
un = 700 f £ from Figure 3-23

a = q-^.n o (p 0 isnegligible)=1.6-10- 1 9 C-700f|.10 1 7 ^ = 1 1 . 2 ^

p= - = = 0.0893 Q-cm

1 3
! - c m
H
~ " q-n ~ " 1.6-10"19C-1017-L ~ " ' ~
~ ° cm
1 B R 10~ 3 A-10^^-(-62 5—)
From Equations 3-49 and 3-52, V ^ = -^—z—s. = s s l J : — L _ £ J 1 = -62.5//V
t 10 cm