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Lab 6

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19 views5 pages

Lab 6

Uploaded by

johnlemmar4
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LABORATORY 6

Bipolar Junction Transistor


Analysis
Members:
Abapo, Daguimol, Jeromi
Anjeanette Jabonga,
Bonilla, Kate Ivan Johnlemmar
Rivera, Charles
Objective/s:

1. Apply the theoretical concepts obtained on the topics of


transistors on experimental conditions.
2. Analyze transistor circuits and troubleshoot possible faults that may arise.

List of Equipment and Component/s:

· Resistors: 470 Ω and


49 kΩ · Transistor:
2N3903
· DC power
supply ·
Multimeter
· Multisim

Theory:

Bipolar junction transistors (BJT) are three-terminal transistors with two pn


junctions that are able to amplify signals. The three terminals of BJT are base,
emitter, and collector. The emitter terminal is highly doped semiconductor
material, thus, it has more current present compared to the other terminals. The
base terminal is the most lightly doped among the three terminals, thus, a very
small amount of current occurs in this terminal. The collector terminal is
moderately doped semiconductor material and a significant amount of
current, almost approximately equal to emitter current, is present.

Important working formulas in dealing with BJT:

𝑰𝑬 = 𝑰𝑩 + 𝑰 𝑪

𝑰𝑪 = 𝜷𝑰𝑩
Procedure:

1. Consider the transistor circuit shown in Figure 6.1 below.


Figure 6.1 Transistor biased circuit

a. Analytically determine the values𝐵of 𝑉 𝐸 , 𝐼𝐵 , 𝐼𝐶 , 𝑉 𝐸 .


of 𝑉 𝐸 , 𝐼𝐵 , 𝐼𝐶 , 𝑉 𝐸 .
𝐶
b. Experimentally determine the values 𝐵
𝐶
Compare the values obtained in 1a and 1b and write the results in Table
6.1. Discuss your observations
c. Is the transistor operating in cutoff, linear, or saturation?
2. Analyze the circuit in Figure 6.1 and answer the following
problems: a. What happens to the circuit parameters if
resistor Rb is open? b. What happens to the circuit
parameters if resistor Rc is open?
c. What happens to the circuit parameters if the base of the transistor
is internally open?
d. What happens to the circuit parameters if the collector of the
transistor is internally open?
e. What happens to the circuit parameters if the emitter of the
transistor is internally open?
f. What happens to the circuit parameters if the emitter terminally is
not properly connected to ground?

Observations:
Table 1. Required Parameter Values
Theoretical Simulation

𝑽𝑩𝑬 𝑰𝑩 𝑰𝑪 𝑽𝑪𝑬 𝑽𝑩𝑬 𝑰𝑩 𝑰𝑪 𝑽𝑪𝑬

0.7V 0.047mA 3.869 mA 7.18 V

Hand Calculations:

𝐵𝐸 :
�
�

V B=V BE =0.7 V

𝐼𝐵 : V BB−V BE 3−0.7
I B= = 3
=0.047 mA
RB 49 × 10
𝐼𝐶 :

I C =β I B =82.323 ( 0.047 )=3.869 mA

𝐶𝐸 :
�
� 3.869
V CE =V CC −I C RC =9− ( 470 )=7.18 V
1000
Discussions:

The circuit is operating as expected since the measured values for VBE,
IB, and IC closely resemble the expected values. Despite being marginally
higher than anticipated, the VCE figure is most likely the result of
measurement errors. The transistor is in the linear zone, which is ideal for most
transistor circuits since it allows input signals to be amplified without
distortion. A fixed-bias or base-bias transistor circuit, which is frequently seen
in amplifiers and other electrical devices, is depicted in Figure 6.1.

Transistor Q1 turns off with no collector current flow when the resistor Rb
is open because the base current drops to zero. As a result, Q1's collector
voltage and supply voltage V2 are equal. On the other hand, the collector
current of Q1 passes via the base-emitter junction when resistor Rc is open,
which could cause the transistor to overheat and possibly fail. The transistor is
turned off by an internal open in the base, collector, or emitter. Similar to the
impact of an open resistor Rb, the transistor will not switch on if the emitter
terminal is internally open or improperly connected to the ground.

In general, if any components in the circuit depicted in Figure 6.1 are


open or shorted, the circuit will not function correctly.

Conclusions:

To sum up, this lab exercise provided insightful knowledge about the
real-world implementation of theoretical concepts associated with Bipolar
Junction Transistor (BJT) analysis. The expected behavior of the circuit was
shown by the tight alignment of the experimental and analytical values for
VBE, IB, and IC. The transistor operated within the linear range, which is
perfect for undistorted signal amplification, even if the VCE value was slightly
raised, most likely due to measurement mistakes.
The circuit for a fixed-bias transistor demonstrated its widespread
use in electrical devices and amplifiers. An open resistor, Rb, deactivated the
transistor, but an open resistor, Rc, caused overheating and possible failure,
according to our investigation into possible defects. The transistor's function
was disrupted by comparable internal openings in the base, collector, or
emitter.
Understanding these circuit characteristics and possible difficulties
improves our ability to identify issues and create reliable electrical systems.
Essentially, this practical experience helped to bridge the gap between
theoretical knowledge and practical skills, resulting in a deeper understanding
of BJT analysis in practical settings.

Recommendation/s:

The BJT analysis lab exercise emphasizes the value of increased measurement
precision by suggesting the use of sophisticated instruments and carrying out
numerous measurements. In order to increase the longevity of electrical
devices, the emphasis is on preventing problems through frequent circuit
inspections. To reduce possible hazards, it is recommended to put safety
measures in place, such as thermal protection equipment. The goal of
encouraging more experimentation with different circuit configurations is to
improve students' understanding of BJT analysis. A thorough approach that
incorporates safety measures, fault prevention, mistake analysis, and ongoing
experimentation enhances the learning process.

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