2N60

Surface Mount N-Channel Power MOSFET

P b Lead(Pb)-Free DRAIN CURRENT
2 AMPERES

Description: DRAIN SOURCE VOLTAGE

600 VOLTAGE
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts D-PAK3/(TO-251)
based on half bridge topology.
2 DRAIN

Features: D-PAK/(TO-252)
* 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
* Low gate charge
1 GATE
* Low Crss
* Fast switching
* Improved dv/dt capability 3
SOURCE TO-220 TO-220F

Maximum Ratings(T A =25 C Unless Otherwise Specified)

Rating Symbol Value Unit
Drain-Source Voltage VDSS 600
V
Gate-Source Voltage VGSS 30
Avalanche Current - (Note 1) I AR 2.0
Continuous Drain Current ID 2.0
A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 8.0
Avalanche Energy, Single Pulsed (Note 2) E AS 140 mJ
Avalanche Energy, Repetitive, Limited by TJMAX E AR 4.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Total Power Dissipation 2N60P(TC=25˚C) 44
2N60F(T C=25˚C) 23
2N60I/D(TC=25˚C) PD 34 W
2N60P(Derate above 25°C) 0.35
2N60F(Derate above 25°C) 0.18
2N60I/D(Derate above 25°C) 0.27
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds TL 300 ˚C

Operating Junction and Storage Temperature Range TJ,Tstg -55~+150 ˚C

* Drain current limited by maximum junction temperature.

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 2N60
Electrical Characteristics (TA = 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Static
Drain-Source Breakdown Voltage @V GS=0,ID=250μA BVDSS 600 - -
V
Gate Threshold Voltage @V DS=VGS,ID=250μA VGS(Th) 2.0 - 4.0
Gate-Source Leakage current Forward@V GS=30V,V DS=0V - - 100 nA
IGSS
ReVerse@V GS=-30V,VDS=0V - - -100
Drain-SourceLeakage Current(Tj=25˚C) @VDS=600V,VGS=0 - - 10
IDSS μA
Drain-SourceLeakage Current(Tj=125˚C) @VDS=480V,VGS=0 - - 100

Drain-Source On-State Resistance @VGS=10V,I D=1.0A RDS(on) - 4.0 5.0 Ω

Forward Transconductance @VDS=50V,I D=1.0A(Note 4) gfs - 2.25 - S

Breakdown Voltage Temperature Coefficient ∆BV DSS

- 0.4 - V/˚C
I D =250 µA, Referenced to 25°C /∆TJ

Dynamic
Input Capacitance @VGS=0V,VDS=25V,f=1.0MHz Ciss - 320 380

Output Capacitance @VGS=0V,VDS=25V,f=1.0MHz Coss - 30 45 pF

Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz Crss - 3 5.6

Switching
Turn-on Delay Time
td(on) - 13 30
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
Turn-on Rise Time
tr - 12 60
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
ns
Turn-off Delay Time td(off) - 73 100
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5)
Turn-off Fall Time
VDD =300V,ID =2.0A,R G=25Ω(Note 4, 5) tf - 14.3 70

Total Gate Charge

Qg - 9.3 13
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Gate-Source Charge Qgs - 2.0 - nC
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)
Gate-Drain Change
Qgd - 3.3 -
VDS =480V,ID =7.5A,VGS =10V(Note 4, 5)

WEITRON 2/9 12-Apr-2011

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 2N60
Electrical Characteristics (TA = 25℃ Unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Source-Drain Diode Characteristics

Drain-Source Diode Forward Voltage @VGS=0V,IS=7.5A VSD - - 1.4 V

Maximum Continuous Drain-Source Diode Forward Current IS - - 2.0 A

Maximum Pulsed Drain-Source Diode Forward Current I SM - - 8.0 A

Reverse Recovery Time @VGS=0V,IS=7.5A,dlF/dt=100A/µs (Note 4) T rr - 230 - ns

Reverse Recovery Charge

Q rr - 1.0 - µC
@VGS=0V,IS=7.5A,dlF/dt=100A/µs(Note 4)

Thermal Data
Characteristic Symbol Value Unit
Junction-to-Ambient 2N60P 62.5
2N60F 120
RJA 112
°C/W
2N60I
2N60D 112
Junction-to-Case 2N60P 2.26
2N60F RJC 5.56 °C/W
2N60I 3.7
2N60D 3.7
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, IAS = 2.58A, VDD = 123V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

Ordering Information
Pin Assignment
Order Number Package Packing
1 2 3

2N60P TO-220 G D S Tube

2N60F TO-220F G D S Tube

2N60I D-PAK3/TO-251 G D S Tube

2N60D D-PAK/TO-252 G D S Tube

WEITRON 3/9 12-Apr-2011

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 2N60
Test Circuits And Waveforms
D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * I SD controlled by pulse period
VGS * D.U.T.-Device Under Test
as D.U.T.

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.) di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

WEITRON 4/9 12-Apr-2011

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 2N60
Test Circuits And Waveforms(cont.)
RL
VDS
VDS 90%

VGS VDD
RG

10%
VGS
D.U.T.
10V t D(ON ) tD (OFF)
Pulse Width ≤ 1μs tR tF
Duty Factor ≤0.1%

Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2 μF 0.3 μF
VDS
QGS QGD
VGS

DUT
VG
3mA

Charge

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

L
VDS

BVDSS

RD
VDD

10V D.U.T.
tp IAS
tp Time

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

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 2N60
Typical Characteristics
On-Region Characteristics Transfer Characteristics

V GS VDS=50V
Top: 15.0V
10 .0V 250 μs Pulse Test
8 .0V
100 7 .0V
6 .5V
Drain Current, I D (A)

Drain Current, ID (A)

6 .0V
Bottorm : 85 °C
5.5V
0
10 25 °C
-1
10 -20 °C

250μs Pulse Test

-2 TC=25°C 10
-1
10
-1 0 1 2 4 6 8 10
10 10 10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)

On-Resistance Variation vs. Drain Current and Bo dy Dio de Fo rwa rd Vo ltag e Va riati onvs.
Gate Voltage Source Current and Temperature
12
Drain-Source On-Resistance, R DS(ON) ( Ω )

TJ=25 °C VGS=0V
250 μs Pulse Test
VGS=10V
Reverse Drain Current, IDR (A)

10
VGS=20V
8

0
6 10
125 °C
4 25°C

0 10-1
0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain Current, ID (A) Source-Drain Voltage, VSD (V)

Capacitance vs. Drain-Source Voltage Gate Charge vs. Gate Charge Voltage

500 12
Ciss=C GS+CGD
(CDS=shorted) VDS=120V
Coss=C DS+CGD 10
Gate-Source Voltage, VGS (V)

400 VDS=300V
Crss=CGD VDS=480V
Capacitance (pF)

Ciss
8
300
C oss
6
200
4
Crss
100
VGS=0V 2
f = 1MHz ID=2.4A
0 0
-1
10 100 101 0 2 4 6 8 1
0
Drain-Source Voltage, V (V) Total Gate Charge, Q (nC)

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 2N60
Typical Characteristics
Breakdown Voltage vs. Temperature On -Resistance vs. Temperature

1.2 3.0 V =10V

Drain-Source Breakdown Voltage,

VGS=10V GS
ID=250ӴA ID=4.05A

Drain-Source On-Resistance,
2.5
1.1
VDSS (Normalized)

RDS(ON) (Normalized)
2.0

1.0 1.5

1.0
0.9
0.5

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature, TJ (ć) Junction Temperature, T J (ć)

Max. Safe Operating Area Max. Drain Current vs. Case Temperature

2.0
Operation in This Area
is Limited by RDS(on)
10 1
Drain Current, ID (A)

Drain Current, ID (A)

100Ӵs 10Ӵs 1.5

1ms
100 10m 1.0
Ds
C

10 -1 0.5
TC=25ć
TJ=125ć
Single Pulse
10 -2 0.0
100 101 102 103 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (ć)

Thermal Response
Thermal Response, ӰJC (t)

D=0.5
10 0
JC (t) = 2.78 /W Max.
0.2
Duty Factor, D=t1/t2
0.1 TJM -TC=PDM× JC (t)
0.05
-1 0.02
10 PDM
0.01
Single pulse t1
t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Square Wave Pulse Duration, t1 (s)

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 2N60
TO-220 Outline Dimensions Unit:mm

D
A TO-220
C1 Dim M in M ax
Ø A 4.47 4.67
F
A1 2.52 2.82
B 0.71 0.91
H B1 1.37
1.17
C 0.31 0.53
E1
E C1 1.17 1.37
D 10.01 10.31
E 8.50 8.90
B1 L1 A1 E1 12.06 12.446
B G 2.54 TYP
G1
L

4.98 5.18
F 2.59 2.89
H 0.00 0.30
G C L 13.4 13.8
G1 L1 3.56 3.96
Φ 3.73 3.93

TO-220F Outline Dimensions Unit:mm

TO-220F
Symbol Dimension 1 Dimension 2
A 3.3±0.15 2.70±0.75
B 2.55±0.20 3.0±0.20
C 4.72±0.2 4.5±0.20
D 1.47MAX 1.75MAX
L 15.75±0.30 15±0.30

WEITRON 8/9 12-Apr-2011

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 2N60
TO-251 Outline Dimensions unit:mm

E TO-251
G
A Dim M in M ax
4 H
A 6 .4 0 6 .8 0
B 6 .8 0 7 .2 0
B J C 0 .5 0 0 .8 0
D - 2 .3 0
1 2 3
E 2 .2 0 2 .5 0
M G 0 .4 5 0 .5 5
N H 1 .0 0 1 .6 0
D K J 5 .4 0 5 .8 0
C
K 0 .4 5 0 .6 9
L L 0 .9 0 1 .5 0
M 6 .5 0 -
N - 0 .9 0
1 . Em it t er
2 . Base
3 . Collect or

TO-252 Outline Dimensions unit:mm

E TO-252
A G Dim Min Max
A 6.40 6.80
4 H
B 9.00 10.00
C 0.50 0.80
J D - 2.30
1 2 3 B E 2.20 2.50
G 0.45 0.55
H 1.00 1.60
M
J 5.40 5.80
D K K 0.30 0.64
C L 0.70 1.70
L M 0.90 1.50

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