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WWW - Manaresults.co - In: II B. Tech I Semester Supplementary Examinations, January - 2023 Electronic Devices and Circuits

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WWW - Manaresults.co - In: II B. Tech I Semester Supplementary Examinations, January - 2023 Electronic Devices and Circuits

Uploaded by

lakkasindhu29
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R16 SET - 1

Code No: R1621041

II B. Tech I Semester Supplementary Examinations, January - 2023


ELECTRONIC DEVICES AND CIRCUITS
(Com to ECE, EIE and ECC, E.Comp.E)
Time: 3 hours Max. Marks: 70

Note: 1. Question Paper consists of two parts (Part-A and Part-B)


2. Answer ALL the question in Part-A
3. Answer any FOUR Questions from Part-B
~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~
PART –A (Marks:14)
1. a) Define drift and diffusion currents of a semiconductor. (2M)
b) Draw the V-I characteristics of a UJT and write its applications. (2M)
c) What is a filter and mention the different types of filters used in rectifier (2M)
circuits?
d) What are FET parameters and give the relation between them? (3M)
e) What is thermal runaway? (2M)
f) Write the expressions for the h-parameters of a transistor under CB (3M)
configuration.
PART –B (Marks: 4x14=56)
2. a) Derive the continuity equation and write its utility towards current flow. (7M)
b) Explain Hall effect. What are its applications? (7M)
3. a) Give the current component of PN junction diode and define diode current (7M)
equation.
b) Explain the construction and working of Varactor diode with the help of V-I (7M)
characteristics.
4. a) Derive the ripple factor and efficiency of a Half wave rectifier with show the (7M)
wave form.
b) A full wave rectifier delivers 50 W to a load of 200 ohm. If the ripple factor is (7M)
1%, calculate the ac ripple voltage across the load.

5. a) Draw the input output characteristics of NPN transistor in CE configuration and (7M)
explain.
b) Explain the construction and working of n-channel JFET and draw the drain (7M)
and transfer characteristics.

6. a) What is the need for biasing what are the factors effecting the operating point in BJT? (7M)
b) In a self-bias n-channel JFET, the operating point is to be set at ID = 1.5mA (7M)
and VDS =10 V. The JFET parameters are IDSS = 5 mA and VGS(off) = − 2 V.
Find the values of RS and RD. Given that VDD = 20 V.

7. a) Draw the circuit diagram of common Emitter amplifier and derive expression for (7M)
voltage gain, current gain, input impedance and output admittance using approximate
model.
b) Draw the small signal low frequency h- parameter model of CE, CB, and CC (7M)
configurations and compare voltage gain, current gain, input impedance, output
impedance.

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