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amplifier. conventional amplifier ?Explain
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MOSFET. 4x5 bandwidth and input / output impdance.
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minoity carrier concentration behaviour in a cascode amplifier and expiain is *uhing in bricf.
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frequency and mid band voltage gain. 10
derive the equations for all the four ampiifier
(ü) Explain V-I characteristics and sensitivity parameters.
variation of a photodiode. Briefly discuss about 7 (i) Explain construction and working efan avaianche
Photo FET. 10
transistor. Also write its applicatinS.
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source MOSFET amplifier at low frequencies and () Semiconductor LASER
derive and expression for voltage gain with and
without source resistance included in the circuit. (i) Operating point stabilization techniques used in
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V (a) Diffused transistor.
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figure 3 (1)
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o(c) Hetro junction. 3+4+3

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difference of responses.? 10

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circuit? 10

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channel JFET and derive the relation for Av, Ri &
10
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diagram and different features of this circuit from
10
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applications.
configuration
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UJT relaxation
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oscillator and explain its working with wave form. 10

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B.E. I| (EEE)
EC. Devi. & Cir.
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Second B.E. Examination,2014
. / Write short notes on ANYTWO: (Electronics and ElectricalEngineering)
(2 Theory of LED (III -Semester Examination Scheme)
Darlington circuit v EEE-203 A: ELECTRONICDEVICES
(c) Boot-strap biasing AND CIRCUITS
(d) Transformer coupled amplifier
(5+5=10) Time:Three Hours
Maximum Marks: 50

Note :(1) Attempt any FIVE questions

(2) Allquestions carry equal marks.
(3) Marks allotted to each part of the question
are. indicated on:the ight side.

(a) Explain working theory of a p-n junction iode

in forward and reverse bias: (5)

Explain construction of BJT (NPN) with its

input &output characteristics. (5)

SPH-18+ (Contd,)
300
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B.E. (UEC)
EC. Devi, && Cir.

Sccond B.E. Examination, 2013

(Elcctronics änd Electrical Engineering)
(ThirdSemester)
EEE-203 A : ELECTRONIC DEVICES AND
CIRCrITS

Time-Three Hours
Maximum Marks-50
Note :-(1) Answer any TIVE questions.
(2) Marks allotted to each part of the question
arc indicated on the right side.

1. ka) Describe open circuit p-n junction with the help

of energy band diagram. 5

fb) The current flowing in a-p-n junction at room

temperature 27°Cis 2 x 10" A, when a large
reverse bias voltage applied. Calculate the current
Ilowing. wher 0.1V is applied.
(Contd.)
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CIRCUITS
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