<br>

Chapter 2
E 8 V = 24.24
1. The load line will intersect at Ip= mA and Vp= 8 V.
330 S2

(a) Vp
0.92 V
21.5 mA
V

VR=E- Vp. =8 V-0.92 V=7.08

(b) Vp 0.7 V
Ip 22.2 mA
VR=E- V,. =8 V

-0.7V=7.3 V

(c) VDo 0V
Ip 24.24 mA

VR=E- V. =8 V-0V= 8 V
For (a) and (b), levels of Vp and p are quite close. Levels of part (c) are reasonably close
but as expected due to level of applied voltage E.

(a) Ip
E 5V
2. =2.27 mA
2.2 kOQ
R
The load line extends from I, = 2.27 mA to V» =5V.
VD, 0.7 V, Ip, mA 2

(b) Ip= E 5V = 10.64 mA

0.47 kS
R
The load line extends from lp= 10.64 mA to Vp=5 V.
Vp, 0.8V, Ip,
9 mA
E 5 V
(c) I,= 27.78 mA
R0.18 ks2
The load line extends from I, = 27.78 mA to Vp = 5 V.
Vp,
0.93 V, 1, 22.5 mA
The resulting values of V. are quite close, while I,. extends from 2 mA to 22.5 mA.

3. Load line through I, = 10 mA of characteristics and Vp=7Vwill intersect Ip axis as

11.25 mA.

mA
= E 7V
Ip= 11.25
R R

with R =
7V = 0.62 k2
11.25 mA

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E-Vp 30 V-0.7 V
4. (a) Ip = lR= = 13.32 mA
R 2.2 kQ
V»=0.7 V, V=E- Vp=30 V
-0.7V= 29,3 V
E-VD 30 V–0 V
(b) I,= 13.64 mA
R 2.2 kS2
Vp=0 V, VR= 30V

Yes, since E > V the levels of lp and Vz are quite close.

5 (a) I=0 mA; diode reverse-biased.

(b) V209-20 V-0.7 V= 19.3 V (Kirchhoff's voltage law)

19.3 V
I= =0.965 A
20 2
10V
(c) I= =1 A; center branch open
10Q

6. (a) Diode forward-biased,

Kirchhoff's voltage law (CW): -5 V + 0.7 V –V% =0
V,=-4.3 V
V
4.3 V
1.955 mA
R 2.2 k2
(b) Diode forward-biased,
8 V-0.7 V
= 1,24 mA
1.2 kQ + 4.7 kQ
V,= Va1g + V»=(1.24 mA)(4.7 k) + 0.7 V
=6.53V

2 k2(20 V -0.7V-0.3 V)
7. (a) Vo=
2 kS2 +2 k2
v
1

-(20 –I V
V)= (19 V) =9.5

10V+2V -
0.7 V) 11.3 V

(b) I= 1.2 kS2 + 4.7 kS2

=1.915 mA
5.9 k2
V'= IR =(1.915 mAX4.7 kQ)=9V
V,= V'-2V=9 V-2 V=7V

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8. (a) Determine the Thevenin equivalent circuit for the 10 mA source and 2.2 ksQ resistor.

Er, = IR =(10 mA)(2.2 k2) = 22 V

RTh
-2. 2k2
oV Diode forward-biased
+ 2.2 kS2 22 V -0.7 V
=6.26 mA
22 V
2.2 kS2 +1.2 k2
V,= lb(1.2 ks2)
= (6.26 mA)(1.2 kS2)
=7.51 V
(b) Diode forward-biased
20 V+ 5 V -0.7 V =
2.65 mA
6.8 kQ
Kirchhoff'svoltage law (CW):
+V,-0.7 V+5 V =0
V=-4.3 V
9. (a) V, = 12 V -0.7 V = 11.3 V
V
=0.3 V
(b) V, =-10 V+ 0.3 V + 0.7V=-9V
10 V -0.7 V -0.3 V 9V
1.2
=2 mA, V

=2 mA)(3.3 k2) =-6.6 V

k2 +3.3 kS2 4.5 k2

10. (a) Both diodes forward-biased

20 V-0.7 V
IR= = 4.106 mA
4.7 k2
Assuming identical diodes:
4.106 mA
=2.05 mA
2 2
V,= 20 V-0.7 V= 19.3 V

(b) Right diode forward-biased:

15 V+ 5 V
-0.7V =8.77 mA
2.2 k2
V,= 15 V

-0.7V= 14.3 V

11. (a) Ge diode "on" preventing Si diode from turning "on'":

10 -0.3 V 9.7V V

I= 1
9.7 mA
1
k2 kQ

16 V -0.7 V -0.7 V-12 V 2.6 V

(b) I= =0.553 mA
4.7 kQ 4.7 kQ
V,= 12 V+ (0.553 mA\4.7 k2) = 14.6 V

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12. Both diodes forward-biased:

=
V, =0.7V, V, 0.3 V

20 V– 0.7 V 19.3 V =
1
19.3 mA
kQ 1
k2
0.7 V–0.3 V
lo.47 k)= =0.851 mA
0.47 kQ
I(Sidiode) = I1 ko lo47 k2 -
= 19.3 mA –0.851 mA
= 18.45 mA

13. -
For the parallel Si 2 kS2 branches a Thevenin equivalent will result (for "on" diodes) in a
single series branch of 0.7 V and k2 resistor as shown below:
1

10 V
o V,= 2KS2 (10V-0.7 V)
1
kQ
1
k2 + 2 kS2
0.7 V V
2
k2 =6.2
ETh, RTh

6.2 V
=3.1 mA
2 kQ
I2
ko3.lmA =1.55 mA
2 2

14. Both diodes "off". The threshold voltage of 0.7Vis unavailable for either diode.
V,=0 V

15. Both diodes "on", V,= 10 V -0.7 V =9.3 V

16. Both diodes on".

V,=0.7 V

17. Both diodes "off", V,= 10 V

18. The Sidiode with-5 V at the cathode is "on" while the other is “off". The result is
V,=-5 V + 0.7 V=-4.3 V

19. 0 Vat one terminal is “more positive" than -5 V at the other input terminal. Therefore
assume lower diode "on" and upper diode "off".
The result:
V,=0V-0.7 V =-0.7 V
The result supports the above assumptions.

20. Since all the system terminals are at 10 V the required difference of 0.7 V across either diode
cannot be established. Therefore, both diodes are "off" and
V,=+10 V
as established by 10 V supply connected to 1 k2 resistor.

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21. The Sidiode requires more terminal voltage than the Ge diode to turn "on". Therefore, with
5V at both input terminals, assume Si diode off" and Ge diode "on".
The result: V, = 5 V -0.3 V =4.7 V
The result supports the above assumptions.

22.
2 V
Váe =0.318 Vm>m= 6.28 V
0.318 0.318

6.28 V

0V

6.28 V 2.85 mA
I,, = 2.85 mA
R 2.2 kS2

23. Using Vac 0.318(Vm V) -

2 V=0.318(Vm -0.7 V)
Solving: Vm=6.98 V 10:1 for V:VT

6.98 V 6.98 V
2.85 mA
0.7 V

Vdc 2V
24. Vm =6.28 V
0.318 0.318

6.28 V 6.28 V

0V
0 o

A L
max
6.28 V
6.8 k2

0.924 mA
=0,924

0 mA
. mA

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6.28 V
Imax(2.2 k2) = =2.855 mA
2.2 kS2
I, =I, "max
tIma(2.2 kS2) =0.924 mA + 2.855 mA = 3.78 mA

3.78 mA

0 mA

25. V,= V2 (110 V) = 155.56 V

Ve =0.318V,=0.318(155.56 V)=49.47 V

155.56 V

26. Diode will conduct when v, =0.7 V; that is,

10 kS2(v)
Vo =0.7V=
10 kQ+1 k2
Solving: V=0.77 V

For v,> 0.77 V Si diode is "on" and v, =0.7 V.

For v, < 0.77 V Si diode is open and level of v, is determined
by voltage divider rule:
10k2(v,) 0.909 vi
10 kQ +1 k2

v; V:
For =-10 0.7 V
V, =0.909(-10 V)
=-9.09 V

When v,
=0.7 V, V.=Vm -0.7 V
= 10 V -0.7 V =9.3 V 9.3 mA
9.3 V
1
=9.3 mA
k2
10 V
Imasreverse) = =0.909 mA -0.909 mA
1
kQ+10 kS2

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27. (a) Pmax= 14 mW= (0.7 V)lb

14 mW =
20 mA
0.7 V

(b) 4.7 k2|| 56 kSQ=4.34 k2

VR=160V -0.7 V= 159.3 V
159.3 V
Imax 36.71 mA
4.34 kS2

L max 36.71mA
(c) ldiode = 18.36 mA
2 2

(d) Yes, Ip = 20 mA > 18.36 mA

(e) ldiode 36.71l mA > Imax

-20 mA
28. (a) V= V2 (120 V) = 169.7 V

= 169.7 V- 2(0.7 V)= 169.7 V- 14V

= 168.3V
V
Vde =0.636(168.3 V)=107.04

(b) PIV = V(load) + V= 168.3 V + 0.7 V = 169 V

V
168.3 V
(c) lp(max) = 1
168.3 mA
R, kQ

(d) Pmax = Vplp = (0.7 V)max

=(0.7 V)(168.3 mA)
= 117.81 mW

29.
PIV = 100 V

-100 V

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30. Positive half-cycle of v;:

Voltage-divider rule:
"on diode
2.2 kS2(V ma

+
Network redrawn:
2.2 kS2
+2.2 k2
2.2 kS2
2.2 kS2

22.2 kS La00
)
=50 V
Negative half-cycle of v;:

"on diode"
Polarity of v, across the 2.2 k2
resistor acting as a load is the samne.

2.2 kS2 Voltage-divider rule:

2.2 k2 2.2 ks2(V)
V
2.2 ks2
2.2 kS2 +2.2 kS2
1

(100 V)
50 V
50V
Vae=0.636V, =0.636 (50 V)
=31.8 V

31. Positive pulse of V;:

Top left diode "off, bottom left diode "on"
2.2 k2| 2.2 ks2= 1.1 kQ
1.1k2(170 V)
= 56.67V
Opcak
1.1 k2 +2.2 k2

Negative pulse of v;:

Top left diode "on", bottom left diode off"
1.1k2(170 V) =

Opeak
56.67V
1.1 kQ +2.2 kS2
Vae =0.636(56.67 V)= 36.04 V

Si diode open for positive pulse of and v =0 V

v,
32. (a)
For -20V<v,s-0.7 V diode on" and v, = V;+0.7 V.
For v, =-20 V, v, -20 V + 0.7 V=-19.3 V
For v, =-0.7 V, V, =-0.7 V +0.7 V = 0V

0V

-19.3 V

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(b) For v; s5 V the 5 Vbattery will ensure the diode is forward-biased and v, = V;-5V.
At v, =5 V
V,
=5 V-5V=0 V
At v, =-20 V
V =-20 V – 5 V=-25 V
For v; > 5 V the diode is reverse-biased and v, =0 V.

0V

-25 V

33. (a) Positive pulse of v;:

1.2 ks2(10 V-0.7 V)
=3.28 y 3.28 V
1.2 kS2+ 2.2 kS2
Negative pulse of v: 0V
diode "open", v, = 0 V
4o
(b) Positive pulse of v: |14.3 V

V,= 10 V-0.7 V +5 V= 14.3 V

Negative pulse of v:
0V
diode open", v, = 0 V

34. (a) For v;= 20 V the diode is reverse-biased and v, =0 V.

For v, =-5 V, v, overpowers the 2 V battery and the diode is "on".

Applying Kirchhoffs voltage law in the clockwise direction:

-5 V+2 V-v, =0
V,
=-3 V
0V

-3V
(b) For V,= 20 V the 20 V level overpowers the 5 V supply and the diode is "on". Using the
short-circuit equivalent for the diode we find V, = V,=20 V.

For v, =-5 V, both v; and the 5 V supply reverse-bias the diode and separate v, fromn Vo.

However, v, is connected directly through the 2.2 k2 resistor to the S V supply and
V =5 V.

Do A 20 V

5V

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35. (a) Diode "on" for v, > 4.7 V

For v; > 4.7 V, V, =4 V+0.7V=4.7 4.7 V

For v; < 4.7 V, diode "off" and v, = V;

(b) Again, diode "on" for y; >4.7 but v, V

now defined as the voltage across the diode

For v, > 4.7 V, v, =0.7 V

For v, < 4.7 V, diode off", I=l=0 mA and V22 kn= IR=(0 mA)R=0V

Therefore, V, = V,-4 V
At v; = 0 V, v, =-4 V
V;=-8 V, V, =-8 V–4 V=-12 V
0.7 V

-12 V

36. For the positive region of v;:

The right Si diode is reverse-biased.
The left Sidiode is "on" for levels of v, greater than
+ v,
5.3 V
0.7 V =6 V. In fact, V, =6 V for >6 V.

For v; <6 V both diodes are reverse-biased and v, = V;.

For the negative region of v,:

The left Si diode is reverse-biased.
v, more negative than 7.3 V +0.7
The right Si diode is "on" for levels of
V=8 V. In
fact, v, -8 V for v, S-8V.

For v, >-8 V both diodes are reverse-biased and v, = V.

6V

ip:For -8 V<v,<6V there is no conduction through the 10 kS resistor due to the lack of a

complete circuit. Therefore, ig =0 mA.

For v; 6 V
VR =V; V=V;-6 V
For v, = 10 V, V = 10V -6 V= 4 V
4 V
and i =0.4 mA
10 kQ
For v s -8 V
VR= V; -
V, = V;
+8 V

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v,
For =-10 V
VR=-10 V+8 V=-2 V
-2 V
and i = =-0.2 MA
10 kS2
iR

+6 V--
0.4mA
0|

37. (a) Starting with v;=-20 V, the diode is in the "on" state and the capacitor quickly charges
to -20 V+. During this interval of time v, is across the "on diode (short-current
equivalent) and v =0 V.
When v, switches to the +20V level the diode enters the off" state (open-circuit
equivalent) and v, = y, tve=20 V + 20 V = +40 V

40 V

total swing of v, = total swing of v;

(b) Starting with v;=-20 V, the diode is in the "on" state and the capacitor quickly charges
up to -15 V+. Note that v;=+20 V and the 5 V supply are additive across the capacitor.
During this time interval V, is across "on diode and 5V supply and v, =-5 V.

When v, switches to the +20 V level the diode enters the "off" state and v, = v;
t vc=
20 V + 15 V = 35 V.

+35 V

)40 V swing (= that of v; )

-5 V -5 V

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38. (a) -
For negative half cycle capacitor charges to peak value of 120 V 0.7 V = 119.3 V with
polarity (HE +). The output v, is directly across the on" diode resulting in
=-0.7 V as a negative peak value.
For next positive half cycle V, = v,+119.3 V with peak value of
V= 120 V+119.3 V = 239.3 V.
239.3 V

- vertical shift of 119.3 V

-0.7 V

(b) - -
For positive half cycle capacitor charges to peak value of 120 V 20 V 0.7 V = 99.3V
with polarity(+ ). The output v, =20 V + 0.7 V = 20.7 V
For next negative half cycle v, = V;-99.3 V with negative peak value of
V =-120 V – 99.3V=-219.3 V.

20.7 V
vertical shift of -99.3 V
V
-99.3

Using the ideal diode approximation the vertical shift of part (a) would be 120 V rather
than 119.3 V and -100 V rather than -99.3 V for part (b). Using the ideal diode
approximation would certainly be appropriate in this case.

39. (a) r= RC= (56 k2)(0.1 uF) = 5.6 ms

5T =28 ms

T lms
(b) 5t =28 ms > 2 2
=0.5 ms, 56:1

(c) Positive pulse of v:

Diode "on and v, =-2 V + 0.7 V =-1.3 V
Capacitor charges to 10 V+2 V- 0.7 V = 11.3 V

Negative pulse of v:
Diode off" and v, =-10 V- 113 V=-21.3V

-1.3 V

-21.3 V

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40. Solution is network of Fig. 2.176(b) using a 10 V supply in place of the 5 V source.

41. Network of Fig. 2.178 with 2 V battery reversed.

2 V

42. (a) In the absence of the Zener diode

180 2(20 V)
=9 V
180 S2+ 220 2
V=9V<V=10 V
and diode non-conducting

20 V
Therefore, I, =Ip= 50 mA
220 S2+ 180 2
with I =0 mA
and V, =9 V

(b) In the absence of the Zener diode

470 Q(20 V)
13.62 V
470 2+ 220 2
V,= 13.62 V > V,= 10 V and Zener diode "on"

Therefore, V, =10V and V = 10 V

=V /R =10 V/220 2 = 45.45 mA

I
=
I,= V/R, 10 V/470 2=21.28 mA
and Iz= I, -h= 45.45 mA- 21.28 mA = 24.17 mA

(c) P
max
=400 mW = Vly= (10 V)l)
400 mW =
40 mA
10 V
= I
-I, =45.45 mA 40 mA =5.45 mA

R = V 10 V
I 5.45 mA
1,834.86 2
min

Large R, reduces I, and forces more of I, to pass through Zener diode.

(d) In the absence of the Zener diode

V= 10 V= R, (20 V)
R, + 2202
10R, + 2200 = 20R,
10R, =2200
RL= 2202

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V 12 V
43. (a) Vz= 12 V, R, = = 60 Q
I, 200 mA
V, 12 V = R,V 60 2(16 V)
V=
R, +R, 60 2+ R,
720 + 12R, = 960
12R, =240
2
R,=20

(b) Pzs = Vzlz

= (12 V)(200 mA)
= 2.4 W

44. Since I, = =is fixed in magnitude the maximum value of I, will occur when lz is a
R,
maximum. The maximum level ofI, will in turn determine the maximum permissible level
of V;
P
max
400 mW =
50 mA
V 8 V

Vz 8 V
=36.3 mA
R, R 220 Q
= 50 mA+ 36.36 mA = 86.36 mA
=L+I

R,
or V;= I R, + Vz
= (86.36 mA)(91 2)+8 V= 7.86 V+ 8 V =
15.86 V

Any value of v; that exceeds 15.86 will result in a current I, that will exceed the maximum
V

value.

45. At 30 V we have to be sure Zener diode is "on".

..
V,=20 V=
RV, k2(30V) 1

R, + R, I kS2+ R,

Solving, R=0.5 kQ

50 V -20 V
At 50V, IR = = 60 mA, I, = 20 V = 20 mA
1
0.5 k2 k2
IzM= I - I,=60 mÁ – 20 mA =40 mA

46. For v, = +50 V:

Z forward-biased at 0.7 V
Z, reverse-biased at the Zener potential and V, = 10 V.
Therefore, V,= V, +V, =0.7 V+ 10V = 10.7 V

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v, V:
For =-50
Z, reverse-biased at the Zener potential and V,
=-10 V.
Z, forward-biased at -0.7 V.
Therefore, V, = V, +V, =-10.7 V

I6,7V

-10,7Y

,
For a 5 V square wave neither Zener diode will reach its Zener potential. In fact, for either
polarity of v, one Zener diode will be in an open-circuit state resulting in = V;.

-Sy

47. V=1.414(120 V) = 169.68 V

=
2Vm=2(169.68 V) 339.36 V

48. The PIV for each diode is 2 Vm

..PIV = 2(1.414)(Vms)

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