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Supporting Information: Ternary Organic Solar Cells Offer 14% Power Conversion Efficiency

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Jawad Ahmad
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9 views13 pages

Supporting Information: Ternary Organic Solar Cells Offer 14% Power Conversion Efficiency

Uploaded by

Jawad Ahmad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Supporting Information

Ternary organic solar cells offer 14% power conversion efficiency

Zuo Xiao, Xue Jia, Liming Ding*

Dr. Z. Xiao, X. Jia, Prof. L. Ding


Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and
Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing
100190, China.
E-mail: [email protected]

X. Jia, Prof. L. Ding


University of Chinese Academy of Sciences,
Beijing 100049, China

Zuo Xiao and Xue Jia contributed equally to this work.

1. Device fabrication and measurements


2. Optimization of device performance
3. Absorption spectra for the binary and ternary blend films
4. Exciton dissociation probabilities
5. SCLC
6. Bimolecular recombination
7. AFM and TEM

1
1. Device fabrication and measurements

1.1 Inverted solar cells


The ZnO precursor solution was prepared according to literature.[1] It was spin-coated onto
ITO glass (4000 rpm for 30 s). The films were annealed at 200 °C in air for 20 min. ZnO film
thickness is ~30 nm. A PTB7-Th:COi8DFIC:PC71BM blend in chlorobenzene (CB) with DIO
additive was spin-coated onto ZnO layer. MoO3 (~6 nm) and Ag (~80 nm) was successively
evaporated onto the active layer through a shadow mask (pressure ca. 10-4 Pa). The effective
area for the devices is 4 mm2. The thicknesses of the active layers were measured by using a
KLA Tencor D-120 profilometer. J-V curves were measured by using a computerized
Keithley 2400 SourceMeter and a Xenon-lamp-based solar simulator (Enli Tech, AM 1.5G,
100 mW/cm2). The illumination intensity of solar simulator was determined by using a
monocrystalline silicon solar cell (Enli SRC2020, 2cm×2cm) calibrated by NIM. The external
quantum efficiency (EQE) spectra were measured by using a QE-R3011 measurement system
(Enli Tech). The film morphology was studied by AFM and TEM. AFM was performed on a
Multimode microscope (Veeco) by using tapping mode. TEM was performed on a Tecnai G2
F20 U-TWIN instrument operated at 200 kV.

1.2 Hole-only devices


The structure for hole-only devices is ITO/PEDOT:PSS/PTB7-Th:COi8DFIC:PC71BM
/MoO3/Al. A 30 nm thick PEDOT:PSS layer was made by spin-coating an aqueous dispersion
onto ITO glass (4000 rpm for 30 s). PEDOT substrates were dried at 150 °C for 10 min. A
PTB7-Th: COi8DFIC:PC71BM blend in CB with 1 vol% DIO additive was spin-coated onto
PEDOT layer. Finally, MoO3 (~6 nm) and Al (~100 nm) was successively evaporated onto
the active layer through a shadow mask (pressure ca. 10-4 Pa). J-V curves were measured by
using a computerized Keithley 2400 SourceMeter in the dark.

1.3 Electron-only devices


The structure for electron-only devices is Al/PTB7-Th:COi8DFIC:PC71BM /Ca/Al. Al (~80
nm) was evaporated onto a glass substrate. A PTB7-Th:COi8DFIC:PC71BM blend in CB with
1 vol% DIO additive was spin-coated onto Al. Ca (~5 nm) and Al (~100 nm) were
successively evaporated onto the active layer through a shadow mask (pressure ca. 10-4 Pa).
J-V curves were measured by using a computerized Keithley 2400 SourceMeter in the dark.

2
2. Optimization of device performance

Table S1 Optimization of D/A1/A2 ratio for PTB7-Th:COi8DFIC:PC71BM inverted solar


cells.a

D/A1/A2 A2/(A1+A2) Voc Jsc FF PCE


[w/w/w] [%] [V] [mA/cm2] [%] [%]
1:1.5:0 0 0.69 23.84 63.8 10.48 (10.17±0.25)b
1:1.35:0.15 10 0.69 26.93 69.8 12.87 (12.58±0.28)
1:1.2:0.3 20 0.69 27.10 70.1 13.12 (12.79±0.26)
1:1.05:0.45 30 0.70 28.20 71.0 14.08 (13.71±0.31)
1:0.9:0.6 40 0.70 26.72 67.4 12.67 (12.31±0.34)
1:0.6:0.9 60 0.71 25.13 64.0 11.46 (11.07±0.21)
1:0:1.5 100 0.75 16.21 60.2 7.36 (6.99±0.33)

a
Blend solution: 18 mg/mL in CB with 1 vol% DIO; spin-coating: 1600 rpm for 60 s.
b
Data in parentheses stand for the average PCEs for 8 cells.

Table S2 Optimization of active layer thickness for PTB7-Th:COi8DFIC:PC71BM inverted


solar cells.a

Thickness Voc Jsc FF PCE


[nm] [V] [mA/cm2] [%] [%]
79 0.68 25.18 62.0 10.69 (10.37±0.28)b
89 0.69 25.83 67.8 12.16 (11.75±0.37)
108 0.70 28.20 71.0 14.08 (13.71±0.31)
128 0.69 27.08 67.0 12.47 (12.04±0.38)
156 0.68 26.14 59.8 10.57 (10.34±0.20)

a
D/A1/A2 ratio: 1:1.05:0.45 (w/w/w); blend solution: 18 mg/mL in CB with 1 vol% DIO.
b
Data in parentheses stand for the average PCEs for 8 cells.

3
Table S3 Optimization of DIO content for PTB7-Th:COi8DFIC:PC71BM inverted solar cells.a

DIO Voc Jsc FF PCE


2
[vol%] [V] [mA/cm ] [%] [%]
0 0.72 22.63 65.2 10.64 (10.38±0.29)b
0.50 0.70 24.73 65.5 11.37 (10.91±0.36)
0.75 0.69 26.08 69.7 12.58 (12.12±0.27)
1.00 0.70 28.20 71.0 14.08 (13.71±0.31)
1.25 0.69 26.45 67.4 12.30 (11.80±0.49)
1.50 0.69 16.99 58.2 6.79 (6.61±0.19)

a
D/A1/A2 ratio: 1:1.05:0.45 (w/w/w); blend solution: 18 mg/mL in CB; spin-coating: 1600
rpm for 60 s.
b
Data in parentheses stand for the average PCEs for 8 cells.

4
3. Absorption spectra for the binary and ternary blend films

Fig. S1 Absorption spectra for PTB7-Th:COi8DFIC (1:1.5), PTB7-Th:PC71BM (1:1.5) and


PTB7-Th:COi8DFIC:PC71BM (1:1.05:0.45) blend films.

5
4. Exciton dissociation probabilities

Fig. S2 Jph-Veff plots.

6
5. SCLC

Charge carrier mobility was measured by SCLC method. The mobility was determined by
fitting the dark current to the model of a single carrier SCLC, which is described by:
9 V2
J   0 r  3
8 d
where J is the current density, μ is the zero-field mobility of holes (μh) or electrons (μe), ε0 is
the permittivity of the vacuum, εr is the relative permittivity of the material, d is the thickness
of the blend film, and V is the effective voltage (V = Vappl–Vbi, where Vappl is the applied
voltage, and Vbi is the built-in potential determined by electrode work function difference).
Here, Vbi = 0.1 V for hole-only devices, Vbi = 0 V for electron-only devices.[2] The mobility
was calculated from the slope of J1/2-V plots.

7
Fig. S3 J-V curves (a) and corresponding J1/2-V plots (b) for the hole-only devices (in dark).
The thicknesses for PTB7-Th:COi8DFIC (1:1.5), PTB7-Th:PC71BM (1:1.5) and
PTB7-Th:COi8DFIC:PC71BM (1:1.05:0.45) blend films are 108, 87 and 104 nm, respectively.

8
Fig. S4 J-V curves (a) and corresponding J1/2-V plots (b) for the electron-only devices (in
dark). The thicknesses for PTB7-Th:COi8DFIC (1:1.5), PTB7-Th:PC71BM (1:1.5) and
PTB7-Th:COi8DFIC:PC71BM (1:1.05:0.45) blend films are 108, 87 and 104 nm, respectively.

Table S4. Hole and electron mobilities for the binary and ternary blend films.

h e
Blend films h/e
[cm2/Vs] [cm2/Vs]
PTB7-Th:COi8DFIC (1:1.5) 6.98×10-4 3.89×10-5 18
PTB7-Th:PC71BM (1:1.5) 2.93×10-4 4.79×10-4 0.6
PTB7-Th:COi8DFIC:PC71BM (1:1.05:0.45) 6.35×10-4 4.80×10-4 1.3

9
10
6. Bimolecular recombination

Fig. S5 Jsc-Plight plots.

11
7. AFM and TEM

Fig. S6 AFM height and phase images, and TEM images for PTB7-Th:COi8DFIC (a, b, c),
PTB7-Th:PC71BM (d, e, f) and PTB7-Th:COi8DFIC:PC71BM (g, h, i) blend films.

12
References

[1] Sun Y, Seo JH, Takacs CJ et al (2011) Inverted polymer solar cells integrated with a
low-temperature-annealed sol-gel-derived ZnO film as an electron transport layer. Adv
Mater 23:1679-1683.
[2] Duan C, Cai W, Hsu B et al (2013) Toward green solvent processable photovoltaic
materials for polymer solar cells: the role of highly polar pendant groups in charge carrier
transport and photovoltaic behavior. Energy Environ Sci 6:3022-3034.

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