hal No... otal Pages : 3 008301 December 2023 B.Tech. (ECE) III SEMESTER Electronic Devices (EC-301) ‘Time : 3 Hours] (Max, Marks : 75, Instructions 1. Itis compulsory to answer all the questions (1.S marks each) of Part-A in shor. 2, Answer any four questions from Part-B in detail, Each question maximum marks is 15 4. Different sub-parts of a question are to be attempted ‘adjacent to each other PART-A 1, (@) Why extrinsic semiconductors are preferred for fabrications of devices? as) (©) Write the equation for the net current in a semiconductor. What is the physical significance of ‘each term? as (©) What type of capacitances associated with PN Junction Diodes? as) (@ Find the location of Fermi energy level for and extrinsic type of semiconductors, as) 008901/2701111/188, Pro.(©) Compare the IV Characteristics of PN Junction diode for Ge and Si based diode. as) (Plot the Common base transistor input and output characteristics for BIT: as (g) What is the input resistance of MOSFET? (1.5) (1) Define the term electrical base width. as) (Explain upon what four parameters does the contact ifference of potential depend? as) @ Compare the properties of Si and Ge material for various parameters in tabular form. as) PART-B 2, What are the four advantages of Integrated circuits? And [Explain the five basic processes involved in te fabrication of an integrated circuit (IC), assuming you already have 2 substrate. as) 3. (@) Explain the breakdown mechanism in junction diodes in detail, @) (B) Derive the Generalized transistor equations for PNP transistor, o 4. (@)_AGe sample is doped with phosphorus to the extent ‘of [atom per 10* atoms. Assume that the effective ‘mass of electron (m,) is half of its true mass. Find the location of Fermi level. Repeat part (a) ifthe doping is 1 per 10° atoms. ® (008301/270/111/188 2 a (©) How does the transition capacitance C, vary with the depletion layer width? o (@) With the applied reverse voltage? (b) What is the order of magnitude of C, (@) Discuss and plot the open circuited p-n Junction diode characteristics. ® (©) Discuss and plot the p-n-p transistor characteristics {in open circuited condition and in active mode of ‘operation ofthe transistor. Diagrams must be properly, sketched. @ ‘Consider a step graded junction p-n junction with doping. profile N,> N,, Then drive a mathematical relationship for ‘charge density, field intensity and potential as fumetion ‘of distance from the junction for reverse bias. (15) Explain construction and working of n-channel enhance- ‘ment type MOSFET in detail, Plot its small signal ‘equivalent model when operating in saturation region. as) (008301/270/111/188 3