Yaseenmustafa,+109 Full+Manuscript 467 1 2 20210826
Yaseenmustafa,+109 Full+Manuscript 467 1 2 20210826
Yaseenmustafa,+109 Full+Manuscript 467 1 2 20210826
1
Department of Physics, Faculty of Science, University of Zakho, Kurdistan Region, Iraq, [email protected]
2
Department of General Sciences, College of Basic Education, University of Zakho, Kurdistan Region, Iraq,
[email protected]
*Correspondence: [email protected]
Abstract
Spin coating is a technique employed for the deposition of uniform thin films of organic materials in the range of micrometer to nanometer
on flat substrates. Typically, a small amount of coating material generally as a liquid is dropped over the substrate center, which is either
static or spinning at low speed. The substrate is then rotated at the desired speed and the coating material has been spread by centrifugal
force. A device that is used for spin coating is termed a spin coater or just a spinner. The substrate continued to spin and the fluid spins
off the boundaries of the substrate until the film is reached the required thickness. The thickness and the characteristics of coated layer
(film) are depending on the number of rotations per minute (rpm) and the time of rotation. Therefore, a mathematical model is obtained
to clarify the prevalent method controlling thin film fabrication. Viscosity and the concentration of (solution) spin coating material are
also affecting the thickness of the substrate. This article reviews spin coating techniques including stages in the coating process such as
deposition, spin-up, stable fluid outflow (spin-off), and evaporation. Additionally, the main affecting factors on the film thickness in the
coating process are reviewed.
Received: May 25th, 2021 / Accepted: August 20th, 2021 / Online: August 28th, 2021
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doi: 10.38094/jastt203109
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GaAs are 58 ± 2 nm, 58 ± 2 nm, and 54 ± 2 nm for sample observed since the liquid runs homogeneously obvious, however
spinning at 2000, 3000, and 4000 rpm, respectively [13]. should create droplets at the border to be thrown off. As a result,
Furthermore, it has been determined that the number of rotations the thickness of thin film depends on the surface tension,
has a considerable effect on the thickness of the coating layer viscosity and rotation rate. There might be a small droplet of
and the efficiency of PANI/TiO2/FTO-Glass Photoanode has coating thickness difference around the edge of the final wafer
been studied [14]. [18].
This work reviews and explain the concept behind the spin D. Evaporation
coating system and its applications. Additionally, the process This is the final step in the deposition process of the spin
and four steps, which are called deposition, spin-up, stable fluid coating technique. It is occurred during the entire procedure of
outflow and evaporation of the spin coating system are film construction and results from the high rotation of the spin
reviewed. Furthermore, we presented the effects of spin speed, coater [19]. In this phase, the substrate spin at a steady rate and
acceleration and rotating time on the thickness of thin films the coating thinning conduct is dominated by solvent
fabricated by the spin coating technique. evaporation. It is important to point out that the thicker film will
II. KEY STAGES OF SPIN COATING be obtained if the time of the evaporation process is increased,
which means increasing the concentration and viscosity of the
In general, the dynamics of spin coating can effectively be solution. Therefore, the solution must evaporate immediately at
demonstrated by separating the complete process into four room temperature.
stages; deposition, spin-up, spin-off and evaporation of
solvents, as shown in Fig. 1 [14]. The first three steps are
commonly taking place consecutively. However, the fourth step
occurs through the entire preparation process [1]. The third step
(flow controlled) and fourth step (evaporation controlled) are
very important because they have the greatest effects on final
coating thickness.
A. Deposition
In this step, the substrate is placed on the spin coater machine
and the coated material as a solution is dropped on the substrate
surface, as illustrated in Fig. 1(a). The substrate is either not
rotating called static deposition or rotating at a low speed called
dynamic deposition [15]. In the static deposition, some drops of
coating material depend on the size of the substrate and the
viscosity of the coating solution are dropped on the substrates
[16]. On the other hand, in the dynamic deposition stage, the
material has been dispensed while the substrate is rotating at low
rotations typically around 500 rpm since it serving in less Fig. 1. Four stages of spin coating process
wastage of coating solution [16]. Dispersion of the coating
material takes place as a result of centrifugal force and height is
III. THE AFFECTED FACTORS ON THIN FILM THICKNESS IN
decreased to critical height.
COATING PROCESS
B. Spin-up Factors that impact on the thickness of the thin film of
After the deposition of materials the substrate will begin to materials coated on the substrates, these four cases will be
spin until it reaches a certain speed. This step is typically discussed below.
regarded as destructive fluid ejection from the surface of
substrate by the rotational process [17]. The centrifugal force A. Spin Speed
that results from the acceleration and angular speed applied to Spin speed can be considered as one of the significant factors
the substrate cases, the flow of fluid outward the substrate in the spin coating system [20, 21]. The speed of spin is
surface, as displayed in Fig. 1(b). The thickness of the coated measured by rotation per minute (rpm). The speed (rpm) of the
layer is strongly affected by the spin speed and rotating time of substrate impacts the degree of radial (centrifugal) force applied
the spin coater. to the liquid resin and the characteristic as well as velocity of the
air directly above it. Particularly, the final film thickness is
C. Spin-off determined generally by the high-speed spin step. In this step,
This stage is considered as the third stage among the spin comparatively slight differences of ± 50 rpm could produce a
coating technique. It is started once the wafer is spinning at a change of about 10% of the resulting thickness. The thickness of
continuous ratio and liquid viscous forces control solution a film is commonly an equilibrium between the force employed
thinning conduct, which is also called stable solution thinning. to shear the liquid resin on the way to the substrate edge and the
Through this step, the fluid spreads out through the surface and drying ratio, which influences the resin viscosity [20].
at that time the edge of the substrate is removed as the film thins
out, as displayed in Fig. 1(c). Effects of edge are commonly
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B. Acceleration By substituting Eq. (3) in Eq. (4) one can get the following
The wafer acceleration a across the ending speed could be equations.
described as the second important factor which influences the
properties of the coated film [22]. Subsequently, the resin starts 𝜕ℎ 1 𝜕(𝑟 2 ℎ3 )
= −𝐾 ( ) (5)
to dry throughout the first part of the spin series, and it is very 𝜕𝑡 𝑟 𝜕𝑟
essential to precisely control acceleration. In the first few
seconds of some process, around 50% of the solvents in the resin 𝜌𝜔2
where 𝐾 = .
will be wasted by evaporation. Additionally, the acceleration 3𝜂
factor plays an important role in the properties of the fabricated The especial solution of eq. (4), before taking a general solution,
sample in the spin coating process. The spinner acceleration is is shown as below. This equation is depending on time factor
able to be programmed with a resolution of 1 rpm/second [20]. only.
C. Rotating Time The special solution is given by
Time can be considered as another important aspect that
affects the spin coating procedure and the characteristic of the 𝜕ℎ 𝜕ℎ
final film [22, 23]. The degree of drying of the liquid resin = 3𝐾𝑟ℎ2 − 2𝐾ℎ3 (6)
𝜕𝑡 𝜕𝑟
through the spin method is well- expressed by the nature of the
liquid itself (volatility of the solvent systems applied) also by the Since at the beginning the film is homogenous, h is not
air that surrounded the sample throughout the spin progress. In 𝜕ℎ
addition, there are also other factors such as temperature and depending on r and therefore = 0 that yields
𝜕𝑟
humidity that have a considerable impact on the characteristics
of the produced thin film. It is also identical to minimize the 𝜕ℎ 𝜕ℎ
= −2𝐾ℎ3 𝑜𝑟 3 = −2𝐾𝜕𝑡 (7)
airflow and related confusion over the wafer itself, or at least 𝜕𝑡 ℎ
stayed constant, thru the spin method.
By integrating Eq. (7) at boundaries conditions at t = 0, h = h0
IV. MODELING THE SPIN COATING PROCEDURE and at t, h = ht then one gets
Theoretical study of spin coating has not been initiated in a
ℎ0 ℎ0
long time, although it has been used in the industry of ℎ𝑡 = = (8)
2
semiconductors. The precise theory study of spin coating entitles √1 + 4ℎ02 𝐾𝑡 2 4ℎ02 𝜌𝜔 2 𝑡
preferable design and control of the operation in its different √1 +
3𝜂
applications. For the theoretical study, supposed utilizing
cylindrical polar coordinates (z, r and θ) with origin at the center The general solution is expressed by connecting total and partial
of rotation, axes θ and r rotating with the plane with angular derivatives as following
velocity ω, and z perpendicular to the plane. However, for
Newtonian fluid, the balance between centrifugal forces per unit 𝑑ℎ 𝜕ℎ 𝜕ℎ 𝑑𝑟
volume and viscous is yielded by [24]: = + (9)
𝑑𝑡 𝜕𝑡 𝜕𝑟 𝑑𝑡
𝑑2𝑣 𝜕ℎ 𝑑𝑟 3𝐾𝑟ℎ02
−𝜂 = [ ] = 𝜌𝑟𝜔2 (1) where = −2𝐾ℎ3 and = 3𝐾𝑟ℎ2 =
𝜕𝑡 𝑑𝑡 1+4ℎ02 𝐾𝑡
𝑑𝑍 2
𝑟 3
where 𝜂 is absolute viscosity, 𝑣 is velocity in the direction of 𝑟 𝑙𝑛 ( ) = 𝑙𝑛(1 + 4ℎ02 𝐾𝑡) = 𝑙𝑛(1 + 4ℎ02 𝐾𝑡)3/4
𝑟0 4
and 𝜌 is fluid density.
𝜕𝑣 𝑟 = 𝑟0 (1 + 4ℎ02 𝐾𝑡)3/4 (10)
By using boundary condition = 0 at z = h gives
𝜕𝑧
By considering the Gaussian initial contour of the formula
1 1
𝑉 = (𝜌𝜛 2 𝑟ℎ𝑧 − 𝜌𝜛 2 𝑟ℎ𝑧 2 ) (2) ℎ0 = 𝑎𝑒 −𝑎
2𝑟2
0
ℎ0
= 𝑒 −𝑎
2𝑟2
0
𝜂 2 𝑎
The radial flow q per unit length of the circumference is For Gaussian plus uniform initial contour of the form
expressed by the following equation
ℎ0 2 2
ℎ
𝜌𝜔2 𝑟ℎ2 = 𝑒 −𝑎 𝑟0 (11)
𝑎
𝑞 = ∫ 𝑣(𝑧)𝑑𝑧 = (3)
0 3𝜂
the exponential expression will conduct to levelling with the rise
The equation for continuity is yielded by in t.
It is important to mention that the evaporation stage plays a
𝜕ℎ 𝜕(𝑟𝑞) significant role in the final thickness of the film. Therefore, the
𝑟[ ] = − (4)
𝜕𝑡 𝜕𝑟
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evaporation term as a constant to the thinning rate has been 3. It is a fast functional system and low price.
added, as presented below
4. It is a relatively low cost comparing physical vapor
deposition and other methods.
𝑑ℎ
= −2𝐾ℎ3 − 𝑒 (12) 5. Another advantage of spin coating is less loss of
𝑑𝑡
materials than of other systems [24][25].
where e is evaporation rate (ml s-1 cm-1). When the viscous flow
rate and evaporation rate become equal at the transition point, VI. DISADVANTAGES
evaporation depends on rotation rate (ω).
There are a few disadvantages of spin coating process. The
main drawback of this process, it cannot be used for large
𝑒 = 𝐶 √𝜔 (13)
substrates because large substrates are unable to weave at a
C is constant and hf refers to the thickness of the final film, then appropriately high rate to let the film be thin. Moreover, it is
by taking cube root and reordering: difficult to create multilayer structures (> 2 layers) and control
accurately the deposition (homogeneity, rugosity, etc.).
𝑑ℎ 1/3 Furthermore, this system is incapable creates thin film less than
ℎ = (2𝐾)−1/3 (− ) − ℎ𝑓 (14) 10 nm [24].
𝑑𝑡
VII. APPLICATIONS
The flow constant and the thickness of the final film are found
from the slope and the intercept, respectively. Spin For many decades spin coating system has been
utilized as the main technique for the application of thin films.
The solution height h can be divided into the solvent height L
Besides its application in the thin film field, it is also
and the solid height S, as is presented below.
extensively employed in the fabrication of major electronic
devices here is some applications of the spin coating process [2,
ℎ = 𝐿 + 𝑆.
23]:
𝑆 1. The device of solar cells.
The solid concentration C (t) is given as 𝐶(𝑡) = . Thus,
(𝑆+𝐿)
from the equation of continuity it can be obtained the following 2. Detectors.
formula 3. Integrated circuits
𝑑𝑆 2𝜔2 ℎ3 4. Magnetic disk for data storage.
= −𝐶(𝑡) .
𝑑𝑡 3𝜗
𝜂
5. VLSI (very large-scale integration).
where 𝜗 = , 𝜗 represents to the kinetic viscosity. The change
𝜌 6. Optical mirrors.
of height of liquid with including evaporation rate 𝜑 of the
liquid is given by 7. Sensors.
8. Nanoscale device (quantum dots, carbon nanotubes).
𝑑𝑆 2𝜔2 ℎ3
= [−1 + 𝐶(𝑡)] −𝜑 (15) 9. Photoresist for designing wafers in microcircuit
𝑑𝑡 3𝜗 manufacture.
The final film height can be presented by
10. DVD and CD ROM.
1/3
3𝜗0 𝜑𝐶 3 (𝑡) 11. Flat-screen display coatings.
ℎ=[ ] or ℎ 𝜔 −2/3 (16)
2𝜔 2 {1 − 𝐶0 (𝑡)} 12. Insulating films for microcircuit production for
example polymers (where it can be employed to
manufacture films with a thickness less than 10 nm).
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