KENDRIYA VIDYALAYA SANGATHAN

AHMEDABAD REGION
OBJECTIVE TYPE QUESTIONS
SUB: PHYSICS CHAPTER: Semiconductor Electronics: CLASS : XII
Materials, Devices and Simple Circuits

MULTIPLE CHOICE QUESTIONS

1. The effect of increase in temperature on the no. of electrons in conduction band (ne) and
resistance of a semiconductor will be as
A) ne decreases, resistance increases
B) Both ne and resistance increases.
C) Both ne and resistance decreases.
D) ne increases and resistance decreases

2. For extrinsic Semiconductor when doping level is increased

A) Fermi level of p- type semiconductor will go downward and Fermi level of n-type
semiconductor will go upward
B) Fermi level of p- type semiconductor will go upward and Fermi level of n-type semiconductor
will go downward.
C) Fermi- level of both p-type and n-type semiconductors will go upward for T > Tf K and
downward for T< Tf K, where, Tf is Fermi temperature.
D) Fermi level of p-type and n-type semiconductors will not be affected.

3. Carbon, Silicon and germanium have four valence electrons each. At room temperature
which of the following statement is most appropriate?
A) The number of free electrons for conduction is significant in Si and Ge
B) The number of free electrons for conduction is significant only in C but small in Si and Ge.
C) The number of free electrons is negligibly small in all the three.
D) The number of free electrons for conduction is significant in all the three.

4. Electrical conductivity of a semiconductor

A) Decreases with the rise in its temperature
B) Increases with the rise in its temperature
C) Does not change with the rise in its temperature
D) First increases and then decreases with the rise in its temperature

5. The depletion layer in the P-N junction region is caused by

A) Drift of holes
B) Diffusion of charge carriers
C) Migration of impurity ions
D) Drift of electrons

6. In a PN-junction diode
A) The current in the reverse biased condition is generally very small about μA.
B) The current in the reverse biased condition is small but the forward biased current is
independent of the bias voltage
C) The reverse biased current is strongly dependent on the applied bias voltage
D) The forward biased current is very small in comparison to reverse biased current

7. In an unbiased p-n junction, holes diffuse from the p-region to n-region because
A) free electrons in the n-region attract them.
B) they move across the junction by the potential difference.
C) hole concentration in p-region is more as compared to n-region.
D) All the above.

8. Carbon, silicon and germanium have four valence electrons each. These are characterized
by valence and conduction bands separated by energy band gap respectively equal to (Eg)C,
(Eg)Si and (Eg)Ge. Which of the following statements is true?
A) (Eg)Si < (Eg)Ge < (Eg)c
B) (Eg)c < (Eg)Ge < (Eg)Si
C) (Eg)c > (Eg)Si > (Eg)Ge
D) (Eg)c = (Eg)Si = (Eg)Ge

9. The circuit shown in the figure contains two diodes each with a forward resistance of 50 Ω
and with infinite backward resistance. If the battery voltage is 6V, then find the value of current
through the 100 Ω resistances.

A) 0.15A
B) 0.24A
C) 0.02A
D) 0.03A

10. The semiconductor X is made by doping a germanium crystal with arsenic (Z= 33). A
second semiconductor Y is made by doping germanium with indium (Z = 49). The two are
joined end to end and connected to a battery as shown, which of the following statements is
correct?

A) X is P-type, Y is N-type and the junction is forward biased.

B) X is N-type, Y is P-type and the junction is forward biased.
C) X is P-type, Y is N-type and the junction is reverse biased.
D) X is N-type, Y is P-type and the junction is reverse biased.
11. Pure Si at 500 K has equal number of electrons (ne) and hole(nh) concentration of 1.5X1016
m-3. Doping by indium increases hole(nh) concentration to 4.5X1022 m-3. The doped
semiconductor is of
A) N-type with electron concentration ne = 5X1022 m-3
B) P-type with electron concentration ne = 2.5X1010 m-3
C) N-type with electron concentration ne = 2.5X1023 m-3
D) P-type with electron concentration ne = 5X109 m-3

12. The electron concentration in an n-type semiconductor is same as hole concentration in a

p-type semiconductor. An external electric field is applied across each of them. Compare the
currents in them.
A) No current will flow in p-type, current will only flow in n-type.
B) Current in n-type = current in p-type.
C) Current in p-type > current in n-type.
D) Current in n-type > current in p-type.

13. The barrier Potential of a p-n junction depends on :

(1) Type of semiconductor material, (2) Amount of Doping, (3) temperature.
Which of the following is correct?
A)(1) and (2) only.
B) (2) only.
C) (2) and (3) only.
D) (1), (2) and (3).

14- In the middle of the depletion layer of a reverse- biased p-n junction, the
A) Electric field is zero
B) Potential is maximum
C) Electric field is maximum
D) Potential is zero

15- In the given circuits (a), (b and (c), the potential drop across the two p-n junction are equal
in:

A) Circuit (a) only

B) Circuit (b) only
C) Circuit (c) only
D) Both circuit (a) and (c)

16. Which of the following represents forward bias diode ?

A) (a)
B) (b)
C) (c)
D) (d)

17. The given circuit has two ideal diodes connected as shown in figure. The current flowing
through the resistance R1 will be.

A) 2.5 A
B) 10.0 A
C) 1.43 A
D) 3.13 A

18. In half wave rectification, if the input frequency is 60 Hz, then the output frequency would
be
A) zero
B) 30 Hz
C) 60Hz
D) 120Hz

19. The peak voltage in the output of half wave diode rectifier fed with a sinusoidal signal
without filter is 10V. The DC component of output voltage is
A) 10/√ 2 V
B) 10/π V
C) 10 V
D) 20/π V

20. If a full wave rectifier is operating from 50Hz mains, the fundamental frequency of ripple will
be
A) 25 Hz
B) 50 Hz
C) 70.7 Hz
D) 100 Hz
ASSERTION/REASON TYPE QUESTIONS
21. Assertion: The electrical conductivity of n-type semiconductor is higher than that of p-type
semiconductor at a given temperature and voltage applied.

Reason: The mobility of electrons is higher than that of holes.

A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

22. Assertion: Diffusion current in p-n junction is greater than the drift current in magnitude if
the junction is forward biased.
Reason: Diffusion current in a p-n junction is from n-side to p-side if the junction is forward
biased.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If the assertion is false but the reason is true.
C) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
D) If the assertion is true but the reason is false.

23.Assertion: Electron has higher mobility than hole in a semiconductor.

Reason: Mass of electron is less than mass of hole.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

24. Assertion: The energy gap between the valence band and conduction band is greater in
silicon than in germanium.
Reason: Thermal energy produces fewer minority
carriers in silicon than in germanium.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

25. Assertion: A pure semiconductor has negative temperature coefficient of resistance.

Reason: On raising the temperature, more charge carriers are released, conductance
increases and resistance decreases.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
 D) If the assertion and reason both are false.

26. Assertion: At a fixed temperature, silicon will have a minimum conductivity when it has a
smaller acceptor doping.
Reason: The conductivity of an intrinsic semiconductor is slightly higher than that of a lightly
doped p-type.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

27. Assertion: The electrical conductivity of a semiconductor increases on doping.

Reason: Doping always increases the number of electrons in the semiconductor.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

28. Assertion: An n type semiconductor has a large number of electrons but still it is
electrically neutral.
Reason: An n type semiconductor is obtained by doping of pentavalent impurity atoms and an
atom on the whole is electrically neutral.
A) If both assertion and reason are true and the reason is the correct explanation of the
assertion.
B) If both assertion and reason are true but reason is not the correct explanation of the
assertion.
C) If the assertion is true but the reason is false.
D) If the assertion and reason both are false.

CASE BASED QUESTIONS

29. Junction Diode

A p-n junction is the key to all semiconductor devices. When such a junction is made, a
depletion layer is formed consisting of immobile ion-cores devoid of their electrons or holes.
This is responsible for a junction potential barrier. By changing the external applied voltage,
junction barrier can be changed. In forward bias, the barrier is decreased while the barrier
increases in reverse bias. Hence, forward bias current is more (mA) while it is very small (μA)
in reverse biased junction diode. The given figure shows a germanium semiconductor device.
i) In forward bias the width of depletion layer:
A) Decreases with increase in V
B) Increases with increase in V
C) Independent of V
D) None of these
ii) When the junction diode is reverse biased, the flow of current across the junction is
mainly due to:
 A) Diffusion of charges
B) Depends on nature of material
C) Drift of Charges
D) Both drift and diffusion of charges

iii) Which is incorrect statement regarding reverse saturation current in p-n junction
diode?
A) current is due to minority carriers
B) current doubles for every 100°C rise in temperature
C) current carriers are produced by thermal agitation
D) reverse saturation current is also known as leakage current
iv) In a reverse-biased p-n junction, when the applied bias voltage is equal to the
breakdown voltage, then
A) current remains constant while voltage increases sharply
B) voltage remains constant while current increases sharply
C) current and voltage increase
D) current and voltage decrease

30. Energy Bands in Solids

in case of isolated atoms, there are discrete energy levels. But when we take a solid as a whole
there are bonds between atoms. For a particular atom in the solid, neighboring atoms influence
the energies of the outer electrons. These discrete levels spread into continuous bands of
energies. The highest filled band is called valence band. The next higher unfilled band is called
conduction band. The valence band and conduction band are usually separated by forbidden
energy region called forbidden energy gap. In case of metallic conductors, valence band
overlaps conduction band and electrons are readily available for conduction. Hence, they are
good conductors. In case of insulators, there is large energy gap between valence and
conduction bands.
Therefore, conductivity is negligible. In case of semiconductors, the energy gap is small and at
room temperature some of the electrons of valence band cross the energy gap and reach the
conduction band to contribute some electrical conductivity.

i) In semiconductors at a room temperature

A) the valence band is partially empty and the conduction band is partially filled
B) the valence band is completely filled and the conduction band is partially filled
C) the valence band is completely filled
D) the conduction band is completely empty.
ii) In insulators
A) valence band is partially filled with electrons
B) conduction band is partially filled with electrons
C) conduction band is filled with electrons and valence band is empty
D) conduction band is empty and valence band is completely filled with electrons.

iii) In an insulator, the forbidden energy gap between a valence band and conduction
band is of the order of
A) 1 MeV
B) 1 eV
C) 1 keV
D) 5 eV
 iv) Which of the energy band diagram shown in the figure correspond to that of
semiconductor?

ANSWER KEY
1. D 7. C 13. D 19. B 25. A
2. A 8. C 14. A 20. D 26. C
3. A 9. C 15. D 21. A 27. C
4. B 10. D 16. D 22. D 28. A
5. B 11. D 17. A 23. C 29. i) A ii)C iii)B iv)B
6. A 12. D 18. C 24. B 30. i)A ii)D iii)D iv)D