Dashboard ► My courses ► 2101-PYL102 ► 20 October - 26 October ► PYL-102_Quiz-1

Started on Thursday, 21 October 2021, 12:10 PM

State Finished
Completed on Thursday, 21 October 2021, 12:35 PM
Time taken 25 mins 2 secs
Grade 5.50 out of 7.00 (79%)

Question 1 Consider that a p-type silicon device is injected with an electron diffusion current of 8
2
Not answered mA. The cross sectional area of the device: 1 mm and the excess electron
concentration falls off exponentially with distance from the injecting contact. Assume
Not graded
that:
-3 2
1. Diffusion coefficient is: 1.2 x l0 m /s, and
2. The excess electron concentration drops to 25% within a distance of 0.5 mm from the
contact.,
Now calculate the excess hole concentration at the contact.

Hint:
Flux = I/(q x A); And flux can be determined from diffusion equation also.
I is current, q is charge and A is cross sectional area;
Question 2 Correct statement about effective mass of the charge carriers in the following band
Correct structure:

Mark 1.00 out of

1.00

Select one:
a. Effective mass can be +ve as well as -ve also. electrons at the conduction
band minimum have a positive effective mass, whereas holes at valence band
maximum will have a negative effective mass.

b. Effective mass only depends on the band structure dispersion. electrons at the
conduction band will have -ve effective mass due to -ve charge, whereas holes at
valence band will have a +ve effective mass due to +ve charge.

c. Depending on this curvature of the band structure, electrons will have -ve
effective mass at the conduction band minimum, but holes will have +ve effective
mass at valence band maximum.

d. Carrier mass will always be +ve, irrespective of sample parameters.

Your answer is correct.

The correct answer is: Effective mass can be +ve as well as -ve also. electrons at the
conduction band minimum have a positive effective mass, whereas holes at valence
band maximum will have a negative effective mass.
Question 3 Below is the band structure of a semiconductor:
Correct

Mark 0.50 out of

0.50

Identify the correct statement.

Select one:
a. This is an indirect band-gap semiconductor with Eg: 0.45 eV

b. This is an indirect band-gap semiconductor with Eg: 0.43 eV

c. This is an indirect band-gap semiconductor with Eg: 0.23 eV

d. This is a direct band-gap semiconductor with Eg: 0.65 eV

e. This is an indirect band-gap semiconductor with Eg: 0.5 eV

Your answer is correct.

The correct answer is: This is an indirect band-gap semiconductor with Eg: 0.43 eV
Question 4
Consider an GaAs extrinsic semiconductor.
Complete
A. Plot the temperature dependence of mobility, considering that doping concentration is
Mark 1.50 out of very low,
2.00
(Note that the plot in divided in two regions: low temperature and high temperature as
shown in the following plot). Write proper justification for the curves for each section.

B. Now consider a situation that doping is changing in the device with distance. Sketch
how the total mobility will vary with increasing carrier doping at fixed temperature, 200
K. Write proper justification.

Note: Marks for each plot will be given only when both the regions are correctly
drawn. no marks will be given without Proper written justification.
*In order to avoid confusion and loose of marks, use a scale to draw the lines.

Comment:
Wrong answer for lower T
 15 -3
Question 5 A device is made of silicon semiconductor, which is doped with (7 x 10 ) cm Fe
o
Incorrect atoms. The device is working at 1000 C. Identify the correct statement under fully
ionized condition.
Mark 0.00 out of
10 -3
1.00 intrinsic carrier concentration at 300 K: 1 .4 x 10 cm

Select one:
a. Carriers will appear after applying external electric field.
4 -3
b. Minority carriers are electron type with concentration: 1 x 10 cm .
15 -3
c. Majority carriers are electron type with concentration: 7 x 10 cm .
21 -3
d. Majority carriers are hole type with concentration: 7 x 10 m .
4 -3
e. Minority carriers are hole type with concentration: 2.8 x 10 cm .

f. No majority charge carriers. Device behave like an intrinsic semiconductor.

Your answer is incorrect.

The correct answer is: No majority charge carriers. Device behave like an intrinsic
semiconductor.

Question 6 Which statement is true for the Fermi-level?

Correct
Select one:
Mark 1.00 out of
1.00 a. Fermi-level is the reference level where probability of finding an electron is 1/2
at a particular temperature, 300 K. Probability of electron (hole) occupancy changes
linearly above (below) the Fermi level.
b. Fermi-level is a fixed energy level and cannot be changed anyhow by any
means in a semiconductor device.

c. Fermi level always appears at the middle of the band diagram of a

semiconductor. Position is independent of the doping type or dopant concentration.

d. Fermi-level is simply one reference level which can appear at different places
on a semiconductor energy-band diagram depending on the doping conditions. So,
probability of one electron occupancy at +ΔE above Fermi level is the same of a
hole occupancy at -ΔE below the Fermi-level.

Your answer is correct.

The correct answer is: Fermi-level is simply one reference level which can appear at
different places on a semiconductor energy-band diagram depending on the doping
conditions. So, probability of one electron occupancy at +ΔE above Fermi level is the
same of a hole occupancy at -ΔE below the Fermi-level.
 Question 7 In connection with the conductivity of the charge carriers in a semiconductor device,
Correct identify which of the following statement is correct:

Mark 1.00 out of

Select one:
1.00
a. Mobility of the charge carriers can be different along different crystallographic
directions. Such anisotropic behavior is deeply connected the curvature and
dispersion of the associated band structure.

b. Carrier mobility can be anisotropic only-if we can design an artificial lattice

where the scattering cross section is changed along different directions.

c. Carrier mobility is isotropic with respect to any crystallographic direction.

Carriers are free to move anywhere in the device.

d. Carrier mobility is dependent only on the strength of the external electric field.
system parameters doesn't matter.

Your answer is correct.

The correct answer is: Mobility of the charge carriers can be different along different
crystallographic directions. Such anisotropic behavior is deeply connected the curvature
and dispersion of the associated band structure.

2
Question 8 In a Silicon device, electrons and hole carriers have mobilities of 0.11 m /V s and 0.02
2
Correct m /V s respectively. Which of the following statement is correct for carrier diffusion:

Mark 0.50 out of

Select one:
0.50
a. Electrons diffuse faster than holes in the device.

b. Holes diffuse faster than electrons in the device.

c. Carriers can't diffuse unless an external electric field is applied.

d. Carrier diffusion rates of electrons and holes can be same, depending on the
device temperature.

e. Carrier diffusion rate is equal for all types of carriers.

Your answer is correct.

The correct answer is: Electrons diffuse faster than holes in the device.

◄ Minor exam

Jump to...
home assignment ►