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Tutorial Sheet 1-A - DM (06.11.2024)

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19 views2 pages

Tutorial Sheet 1-A - DM (06.11.2024)

Uploaded by

bagadavishaljayantibhai
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Tutorial Sheet 1-A_DM (06.11.

2024)

1. Figure below shows a voltage amplifier with a voltage gain (Av0) of -100 V/V, an input resistance of
Ri = 100 kΩ, and an output resistance of Ro = 0 Ω. A 594 fF capacitance (C) is connected between the
output and input terminals of the amplifier. The amplifier is driven by a voltage source (vsig) having an
internal resistance (Rsig) of 20 kΩ.
a) Will the circuit work as a filter? Find the -3 dB frequency (ω3dB), DC voltage gain (vo/vsig), and
unity gain frequency (ωUGB)?
b) Find output signal vo(t) for the following inputs:
i. vsig(t) = 0.1 × sin(102 × t) V
ii. vsig(t) = 0.1 × sin(105 × t) V
iii. vsig(t) = 0.1 × sin(106 × t) V
iv. vsig(t) = 0.1 × sin(108 × t) V

[Ans: a) Low pass filter; ω3dB = 106 rad/s; DC voltage gain (vo/vsig) = -83.33 V/V; ωUGB = 83.33 ×
106 rad/s;
b) i) vo(t) = -8.33 × sin(102 × t) V, ii) vo(t) = -8.29 × sin(105 × t – 5.7o) V, iii) vo(t) = -5.89 × sin(106
× t – 45o) V, iv) vo(t) = -0.08 × sin(108 × t – 89.4o) V]

2. a) For a particular npn-transistor operating in forward active region has base-emitter junction voltage
of 670 mV, collector current of 3 mA. The 𝑖𝐶 -𝑣𝐶𝐸 characteristics has a slope of 3×10-5 Ʊ. What value
of output resistance does this correspond to? What is the value of the Early voltage? For operation in
forward active region at 30 mA collector current, find the output resistance.
b) Calculate transistor small-signal parameters (𝑔𝑚 , 𝑟𝜋 , 𝑟𝑒 , 𝑟𝑜 ) for collector currents of 3 mA and 30
mA. Assume, β = 100, 𝑉𝑇 = 26 mV @ 27oC, and transistor npn operates in active (forward) region.

[Ans: a) 𝑟𝑜 = 33.33 kΩ, 𝑉𝐴 = 100 V, At 30 mA collector current, 𝑟𝑜 = 3.33 kΩ;


b) At 3 mA collector current, 𝑔𝑚 = 115.385 mƱ, 𝑟𝜋 = 866.67 Ω, 𝑟𝑒 = 8.58 Ω, 𝑟𝑜 = 33.33 kΩ; At 30 mA
collector current, 𝑔𝑚 = 1.154 Ʊ, 𝑟𝜋 = 86.67 Ω, 𝑟𝑒 = 0.858 Ω, 𝑟𝑜 = 3.33 kΩ]

3. Consider a CMOS process for which 𝐿𝑚𝑖𝑛 = 0.25 µm, µ𝑛 × 𝐶𝑜𝑥 = 250 µA/V2, 𝑉𝑡ℎ𝑛 = 0.5 V, 𝑊𝑛 ⁄𝐿𝑛
= 20 µm /0.25 µm, and ignore the channel length modulation effect (i.e. 𝜆𝑛 = 0).
a) Calculate the values of 𝑉𝑂𝑉 , 𝑉𝐺𝑆 , and 𝑉𝐷𝑆𝑚𝑖𝑛 needed to operate the NMOS transistor in saturation
region with a dc current of 𝐼𝐷𝑆 = 0.5 mA.
b) If the source of the transistor is connected to 0 V, what should the gate voltage be for the transistor
to operate in saturation region for 𝐼𝐷𝑆 = 0.5 mA? What is the lowest voltage allowed at the drain while
the transistor operates in saturation region?
c) Find the values of 𝑉𝑂𝑉 and 𝑉𝐺𝑆 required to cause the device to operate as a 100 Ω resistor for very
small 𝑣𝐷𝑆 .
[Ans: a) 𝑉𝑂𝑉 = 0.224 V, 𝑉𝐺𝑆 = 0.724 V, 𝑉𝐷𝑆𝑚𝑖𝑛 = 0.224 V;
b) 𝑉𝐺 = 0.724 V, 𝑉𝐷𝑚𝑖𝑛 = 0.224 V
c) 𝑉𝑂𝑉 = 0.5 V, 𝑉𝐺𝑆 = 1.0 V]

4. Consider a CMOS process for which 𝐿𝑚𝑖𝑛 = 0.25 µm, µ𝑝 × 𝐶𝑜𝑥 = 100 µA/V2, 𝑉𝑡ℎ𝑝 = -0.7 V, 𝑊𝑝 ⁄𝐿𝑝
= 30 µm /0.25 µm, and ignore the channel length modulation effect (i.e. |𝜆𝑝 | = 0).
a) Calculate the values of 𝑉𝑂𝑉 , 𝑉𝐺𝑆 , and 𝑉𝐷𝑆𝑚𝑖𝑛 needed to operate the PMOS transistor in saturation
region with a dc current of 𝐼𝐷𝑆 = -1 mA.
b) If the source of the transistor is connected to 2.5 V, what should the gate voltage be for the transistor
to operate in saturation region for 𝐼𝐷𝑆 = -1 mA? What is the highest voltage allowed at the drain while
the transistor operates in saturation region?
c) Find the values of 𝑉𝑂𝑉 and 𝑉𝐺𝑆 required to cause the device to operate as a 200 Ω resistor for very
small |𝑣𝐷𝑆 |.

[Ans: a) 𝑉𝑂𝑉 = -0.408 V, 𝑉𝐺𝑆 = -1.108 V, |𝑉𝐷𝑆𝑚𝑖𝑛 |= 0.408 V;


b) 𝑉𝐺 = 1.392 V, 𝑉𝐷𝑚𝑎𝑥 = 2.092 V
c) 𝑉𝑂𝑉 = -0.645 V, 𝑉𝐺𝑆 = -1.345 V]

5. For the circuit shown in figure, 𝑅1 = 150 kΩ, 𝑅2 = 91 kΩ, 𝑅𝐶 = 5.1 kΩ,
𝑅𝐸 = 3.3 kΩ, 𝑉𝐶𝐶 = 12 V. Assume, β = 100, 𝑉𝐵𝐸 = 0.7 V, 𝑉𝑇 = 26 mV @
27oC, 𝑉𝐴 = 200 V.
a) Find the voltages at all nodes and the currents through all branches.
b) Determine the operating point (𝑉𝐵𝐸 , 𝑉𝐶𝐸 , 𝐼𝐶 , 𝐼𝐸 , 𝐼𝐵 ), and region of
operation of the transistor.
c) Calculate the small-signal parameters (𝑔𝑚 , 𝑟𝜋 , 𝑟𝑒 , 𝑟𝑜 ) of the transistor.

[Ans: a) 𝐼𝐸 = 0.992 mA, 𝐼𝐶 = 0.982 mA, 𝐼𝐵 = 9.82 µA, 𝑉𝐸 = 3.274 V, 𝑉𝐶


= 6.992 V, 𝑉𝐵 = 3.974 V, 𝐼𝑅1 = 53.51 µA, 𝐼𝑅2 = 43.67 µA;
b) 𝑉𝐵𝐸 = 0.7 V, 𝑉𝐶𝐸 = 3.718 V, 𝐼𝐸 = 0.992 mA, 𝐼𝐶 = 0.982 mA, 𝐼𝐵 = 9.82
µA, Active region;
c) 𝑔𝑚 = 37.77 mƱ, 𝑟𝜋 = 2.648 kΩ, 𝑟𝑒 = 26.21 Ω, 𝑟𝑜 = 203.67 kΩ]

𝑊
6. Design the circuit to operate at a dc drain current of 0.5 mA. Assume VDD = 5 V, µ𝑛 × 𝐶𝑜𝑥 × ( )
𝐿
= 1 mA/V2, 𝑉𝑡ℎ𝑛 = 1 V, RG = 10RD.

VDD

RD
RG

M1 VO

[Ans: RD = 6 kΩ, RG = 60 kΩ]

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