Chen 2016
Chen 2016
Abstract—This paper describes the design and implementation by using a self-synchronization loop utilizing edge detector.
of an asynchronous clock generator which has been used in Such variable duration allows longer time for the comparator
a 14-bit two-stage pipelined SAR ADCs for low-power sensor to act on smaller input signals. Finally, a 14-bit two-stage
applications. A self-synchronization loop based on an edge
detector was utilized to generate an internal clock with variable pipelined SAR ADC with proposed asynchronous clock gen-
phase and frequency. A tunable delay element enables to allocate erator has been designed and simulated in 0.18 μm CMOS.
the available time for the switch capacitor DACs and the gain- The simulation results show that the ADC achieves an effective
stage. Thereafter, three separate asynchronous clock generators number of bits (ENOB) of 13.58-bit at 10 kS/s sampling rate
were implemented to create the control signals for two sub-ADCs while consuming 2.13 μW. The asynchronous clock generator
and the gain-stage between. Finally, a 14-bit asynchronous two-
stage pipelined SAR ADC was designed and simulated in 0.18 consumes 0.33 μW.
μm CMOS. Detailed pre-layout circuit simulations show that the This paper is organized as follows. Section II describes
ADC achieves a SNDR of 83.5 dB while consuming 2.13 μW with the overview of asynchronous two-stage pipelined SAR ADC.
a sampling rate of 10 kS/s. The corresponding FoM is 177.2 dB. Section III provides the detailed circuit implementation of the
proposed asynchronous clock generator. Section IV presents
Index Terms—Asynchronous clock generator, pipelined SAR the simulation results. Finally, conclusions are drawn in Sec-
ADC, self-synchronization, low-power sensors, delay element. tion V.
1
The 3-stage CCP architecture as shown in [6] has been used
fs1
to provide a voltage gain of 8. To achieve such voltage gain,
0
0 5 10 15 20 25 30 35 40 45 three phases for sampling (φ1 s ,φ2 s ,φ3 s ) and three phases for
t
0.92 amplifying (φ1 a , φ2 a , fs2 ) are inevitable. Fig. 6a illustrates
Voltage (V)
0.9
inp the control logic. It is composed of four delay elements and
inn
each one supplies a delay of td2 . When fres is high, the output
0.88
0 5 10 15 20 25 30 35 40 45 of first delay element is ’low’ until the delay time up to td2 .
2 During the same time period, the fres propagates through the
1 NAND gate and the signal ’a’ with a delay of td2 is generated.
Voltage (V)
0
By choosing the fres and ’a’ as the inputs of an AND gate, the
2
1 1.244 ns
2
1 1.322 ns first sampling phase φ1 s with pulse width of td2 is created.
−1 0 0
clk , V
in1 bias1
=0.47 V The rest of sampling phase can be achieved by using the same
0 5 10 15 20 25 30 35 40 45 method except the input pulse should be the previous sampling
Time (us)
(a)
phase. Two OR gates are utilized to create the reset signal and
2 φ1 a by connecting the inputs to the relevant outputs of NAND
gates (b, c, d) as shown in Fig. 6a. Finally, the timing diagram
Voltage (V)
1
of the 3-stage CCP gain-sage is shown in Fig. 6b.
0
clk , V =0.55 V
in1 bias1
0 5 10 15 20 25 30 35 40 45 I& s
Time (us)
+,
(b)
I & s
Fig. 4. Output waves of internal clock generator. (a) Simulation undergoes
with Vbias1 =0.47 V; (b) Simulation undergoes with Vbias1 =0.55 V. I& s +,
I & s
I & s +,
time is 1.322 ns at 30 μs as shown in Fig. 4a due to the smaller I& a
inputs (5 mVpp ). Hence the clkin1 ’s duration of ’low’ varies
I & s +,
with the input’s amplitude. Fig. 4b shows the simulated output I & a
waveform under the Vbias1 =0.55 V. With the same inputs, the +,
td1 is reduced to 3.3 μs.
B. SAR Logic of First-stage ADC
The block diagram of the SAR logic for the first-stage I& s
controlled by the clkin1 is shown in Fig. 5. It consists of I & s
two separate shift registers. The upper DFFs chain generates
the bit approximation pulses while the DFFs in lower row I & s
store the outputs of the comparator (Cout ). Finally, the switch
control signals (D13...D7) for the DAC are generated which I& a
will be involved in the ADC conversion. The final DFF on the
far right side generates the trigger pulse (fres ) for the gain- I & a
stage. The same SAR logic architecture was implemented in
the second-stage except the clock is clkin2 . + ,
Fig. 6. (a) Diagram of control logic of 3-stage CCP gain-stage. (b) Timing
diagram of 3-stage CCP gain-stage.
Q Q Q Q Q
BB BB BB BB BB
Q Q Q Q Q IV. S IMULATION RESULTS
A 14-bit pipelined SAR ADC with asynchronous clock
generator was designed and simulated in 0.18 μm CMOS.
'
Q Q Q Q
The segmented binary-weighted capacitive DAC [5] with k=3
Q
BB BB
BB
BB
BB
serves as the 7-bit first-stage to reduce the unit capacitor value
Q Q Q Q Q
and chip area. The Cu1 is chosen as 120 fF which satisfies the
mismatch and thermal noise requirements of 14-bit resolution.
The three-stage CCP [6] with source follower as unity-gain
buffer was implemented into the gain-stage. Simulation results
Fig. 5. Diagram of SAR control logic for first-stage ADC. show that such gain-stage provides a voltage gain of 7.7. The
gain error caused by the source follower is compensated by
TABLE I. ADC PERFORMANCE WITH DIFFERENT DELAY
tuning the reference voltage of second DAC. The 8-bit split
DAC with a 31 fF unit capacitor forms the second-stage to CMOS 0.18 μm
Resolution 14-bit
alleviate the increased total capacitance. Furthermore, this 8- Sampling rate 10 kS/s
bit split DAC consists of a 4-bit main DAC and 4-bit sub-DAC Vbias1 ∗ (V) 0.47 0.47 0.49
to further reduce the power consumption. The conventional Vbias2 ∗∗ (V) 0.47 0.49 0.47
bootstrapped switch with a 17-bit linearity is used to achieve td1 /td2 (μs) 7.6/7.6 7.6/6.2 6.2/7.6
SNDR (dB) 83.5 83.4 83.18
the input sampling switch (S1 in Fig. 1) for the first sub-ADC. ENOB (bit) 13.58 13.56 13.53
Simple inverters and transmission gate were used to implement Power Breakdown
the DAC switches and the second sub-ADC’s input sampling Asyn-clock
0.33 0.33 0.39
generators (μW)
switch (S2) respectively. SAR ADCs (μW) 0.63 0.63 0.65
Gain-stage (μW) 1.17 0.94 1.17
0
Total Power (μW) 2.13 1.9 2.21
SNDR = 83.5 dB
−20
SFDR = 94.4 dB FoM (dB) 177.2 177.6 176.7
−40
ENOB = 13.58 bits (*) Bias voltage for 1st and 3rd asyn-clock generators.
PSD [ dB ]
−80
−100
flexible clocking scheme enables to efficiently allocate the
−120
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 available time for the sub-DACs, the comparator and the gain
Frequency [ f / fs ]
stage. Using the proposed asynchronous clock generator, a 14-
bit two-stage pipelined SAR ADC has been designed in 0.18
0 μm CMOS technology. The simulation results demonstrate
SNDR = 83.0 dB
−20 SFDR = 95.7 dB the correct operation and effectiveness of the proposed asyn-
−40
ENOB = 13.49 bits chronous clock generator to achieve an ADC with an ENOB
PSD [ dB ]