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Assignment 2 Roll No. 26

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32 views3 pages

Assignment 2 Roll No. 26

Uploaded by

Pragati Sharma
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Assignment 2

Microelectronics

Submitted by – Pragati Sharma

ECE 2

Roll no. 26

Q1 – Different Regions of a CMOS Inverter

A CMOS inverter operates in various regions depending on the input voltage, . These regions are:

1. Cut-off Region: When is low (close to 0V), the PMOS transistor is on, while the NMOS is off.
The output, , is high (close to ).

2. Linear Region: As increases from 0V, the NMOS transistor enters the linear region while the
PMOS is still in saturation. In this region, both transistors start conducting, and begins to
transition from high to low.

3. Saturation Region: When is close to , the NMOS enters saturation while the PMOS enters the
cut-off region, resulting in a low .

Here’s a diagram illustrating these regions on a CMOS inverter transfer curve:

Vout

| ------- -------

VDD|------- -------

|------------------------|------------|---------------→ Vin
Q2 – Designing a D-Latch Using a Transmission Gate

A D-latch can be created with a transmission gate and two inverters:

1. The transmission gate is controlled by the clock signal (CLK).

2. When CLK = 1, the transmission gate is on, allowing data (D) to pass to the output (Q).

3. When CLK = 0, the transmission gate is off, holding the output at the previous state.

This allows the latch to store the data when the clock is low and update when the clock is high.

Q3 – Difference Between Static and Dynamic Power Dissipation in CMOS Digital Circuits

1. Static Power Dissipation: Occurs due to leakage currents when the circuit is not switching. It
includes subthreshold leakage and gate leakage currents and is usually minimal in CMOS
circuits when the transistors are off.

2. Dynamic Power Dissipation: Occurs during switching, as current flows to charge and discharge
the load capacitance. It depends on factors like the supply voltage, clock frequency, and
capacitance.
Dynamic power is calculated as: where is the load capacitance, is the supply voltage, and is the
switching frequency.

Q4 – Define Latch-up. Is It Desirable? How to Reduce Latch-up in CMOS Circuits

Definition: Latch-up is a condition where a parasitic PNPN structure in CMOS devices creates a low-
resistance path between power and ground, causing excessive current flow. This can lead to device
failure.

Is It Desirable? No, latch-up is undesirable as it can damage the circuit.

Ways to Reduce Latch-up:

Guard Rings: Surrounding devices with guard rings to absorb leakage.

Reducing Power Supply Voltage: Lower voltages reduce the risk of latch-up.

Substrate Taps: Connecting substrate and well taps to reduce parasitic interactions.

Using Epitaxial Layers: Adding epitaxial layers reduces the effect of latch-up.

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