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Equation

semi conductor

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14 views4 pages

Equation

semi conductor

Uploaded by

sayed.shahriar.alam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Comprehensive Overview of Semiconductor Physics

1 Direct Recombination of Electrons and Holes


1.1 Mechanism of Recombination
In semiconductors, when an electron from the conduction band meets a hole in the valence band, it
recombines. This process eliminates both the electron and the hole. The energy released during this
recombination can be emitted as a photon or lost as heat, depending on whether the semiconductor is a
direct or indirect bandgap material.

1.2 Mathematical Description


The rate of change of the electron concentration over time can be expressed as:

dn(t)
= −αr n(t)p(t) (1)
dt
Where:

• n(t): Concentration of electrons at time t.


• p(t): Concentration of holes at time t.
• αr : Recombination constant, which is material-dependent.

1.3 Steady-State Conditions


Under equilibrium conditions, the generation rate of carriers equals the recombination rate:

G=R (2)

Where:
• G: Carrier generation rate.
• R: Recombination rate.

1.4 Carrier Lifetime


The minority carrier lifetime (τ ) indicates how long excess carriers exist before recombining:
1
τn = (3)
αr p0
Where p0 is the majority hole concentration.

1.5 Practical Example


In a p-type semiconductor, majority carriers (holes) dominate, and their concentration changes minimally
while minority carriers (electrons) recombine rapidly, leading to significant resistance changes when the
concentration of electrons fluctuates.
—

1
2 Diffusion Process
2.1 What is Diffusion?
Diffusion refers to the natural spreading of particles from regions of high concentration to low concentra-
tion due to random thermal motion. An analogy is like dropping food coloring in water; the dye spreads
out until it is evenly distributed.

2.2 How it Works in Semiconductors


When excess carriers are introduced at a single point in a semiconductor, they will spread out over time,
driven by the concentration gradient.

2.3 Fick’s First Law


The diffusion flux (Jndiff ) describes the rate at which carriers spread:

dn(x)
Jndiff = −Dn (4)
dx
Where:

• Dn : Diffusion coefficient for electrons (units: cm²/s).


dn(x)
• dx : Concentration gradient of electrons.

2.4 Diffusion Current Density


The current density due to electron diffusion is then expressed as:

dn(x)
Jndiff = −qDn (5)
dx
Where:
• q: Charge of an electron (≈ 1.6 × 10−19 C).

2.5 Key Takeaways


Diffusion causes current flow even without an electric field, driven solely by the concentration gradient.
—

3 Diffusion of Carriers
3.1 Carrier Dynamics
When excess carriers are injected into a semiconductor, their concentration is initially non-uniform. Over
time, carriers diffuse until their concentrations become uniform across the material.

3.2 Mathematical Description


The time evolution of carrier concentration is governed by Fick’s Second Law:

∂n(x, t) ∂ 2 n(x, t)
= Dn (6)
∂t ∂x2
Where:
∂n(x,t)
• ∂t : Rate of change of carrier concentration over time.
∂ 2 n(x,t)
• ∂x2 : Curvature of the concentration profile.

2
3.3 Gaussian Solution
For an instantaneous pulse of carriers introduced at x = 0 at t = 0, the concentration at time t is given
by:
x2
 
∆n
n(x, t) = √ exp − (7)
4πDn t 4Dn t
This solution indicates a Gaussian spread of carriers over time, illustrating how quickly the concentration
equalizes.
—

4 Diffusion Length
4.1 Definition
The diffusion length (Ld ) quantifies how far carriers can travel before they recombine, given by:
p
Ld = Dn τn (8)
Where:
• Dn : Diffusion coefficient for electrons.
• τn : Minority carrier lifetime.
The diffusion length is crucial for determining how effective a semiconductor device will be, as it
dictates how far carriers can migrate before recombination occurs.
—

5 Diffusion and Drift of Carriers: Built-in Field


5.1 Drift and Diffusion Combined
In addition to diffusion, carriers also experience drift when an electric field (E) is applied. The total
current density (Jn ) combines both drift and diffusion effects:
dn(x)
Jn (x) = qn(x)µn E − qDn (9)
dx
Where:
• µn : Electron mobility (cm²/V·s).
• n(x): Electron concentration at position x.

5.2 Built-in Electric Fields


In p-n junctions, when carriers diffuse across the junction, they create a charge imbalance that generates
a built-in electric field, which opposes further diffusion and is essential for maintaining equilibrium in
the junction.

5.3 Einstein Relation


The relationship between mobility and diffusion coefficients is given by:
kT
Dn = µn (10)
q
Where:
• k: Boltzmann’s constant.
• T : Absolute temperature (in Kelvin).
• q: Charge of an electron.
This relationship shows how the thermal energy of the system influences carrier mobility and diffusion.
—

3
6 Carrier Dynamics in Junctions
6.1 p-n Junctions
A p-n junction is formed by joining p-type and n-type semiconductors. When electrons from the n-side
recombine with holes from the p-side:
• A depletion region forms, devoid of free carriers.
• A built-in potential develops, which opposes further motion of carriers.

6.2 Applications
• LEDs: In light-emitting diodes, recombination of electrons and holes releases energy in the form
of photons.

• Solar Cells: Photons excite electrons, which are then separated by the electric field at the junction,
leading to electricity generation.
• Transistors: The control of electron and hole dynamics allows for amplification and switching of
electronic signals.

7 Analogies to Simplify Understanding


• Recombination: Similar to water flowing downhill, where potential energy converts to kinetic
energy as it moves to a lower elevation.
• Diffusion: Like spreading perfume in a room; scent molecules move from high concentration
(where the perfume is sprayed) to low concentration until evenly distributed.

• Drift: Comparable to leaves being pushed by the wind; the wind (electric field) influences the
movement of leaves (charge carriers).

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