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2 Sa 1941

Datasheet transistor 2sa1941

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Ronald c. Lodo
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21 views4 pages

2 Sa 1941

Datasheet transistor 2sa1941

Uploaded by

Ronald c. Lodo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JMnic Product Specification

Silicon PNP Power Transistors 2SA1941

DESCRIPTION
With TO-3P(I) package
Complement to type 2SC5198

APPLICATIONS
Power amplifier applications
Recommend for 70W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter

Absolute maximum ratings(Tc=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -140 V

VCEO Collector-emitter voltage Open base -140 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -10 A

IB Base current -1 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


JMnic

Silicon PNP Power Transistors 2SA1941

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -140 V

VCEsat Collector-emitter saturation voltage IC=-7 A;IB=-0.7A -2.0 V

VBE Base-emitter voltage IC=-5A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-140V; IE=0 -5 A

IEBO Emitter cut-off current VEB=-5V; IC=0 -5 A

hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160

hFE-2 DC current gain IC=-5A ; VCE=-5V 35

fT Transition frequency IC=-1A ; VCE=-5V 30 MHz

COB Output capacitance IE=0; VCB=10V;f=1MHz 320 pF

‹ hFE-1 classifications

R O

55-110 80-160

2
JMnic Product Specification

Silicon PNP Power Transistors 2SA1941

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
JMnic

Silicon PNP Power Transistors 2SA1941

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