MCQ LEVEL 1

1 The energy band gap is maximum in

(a) Metals (b) superconductors (c) insulators (d) semiconductors
2 At absolute zero, silicon (Si) acts as
(a) Non-metal (b) metal (c) insulator (d) none of these
3 When impurities are added to a pure semiconductor, the procedure is known
as
(a) Mixing (b)Doping (c)Diffusing (d)None of the above
4 Silicon is doped with which of the following to obtain P type semiconductor
(a) Phosphorus (b) Gallium (c) Germanium (d) Bismuth
5 When an intrinsic semiconductor is doped with an impurity, the
semiconductor's conductivity
(a) Increases (b) decreases (c) remains the same (d) becomes zero
6

(a)
(b

7 To create a p-type semiconductor, an pure semiconductor is doped with the

following material:
a) aluminum b) Phosphorous c) Arsenic d) Sodium
8 The following parameters determines a p-n junction's barrier potential:
i) type of semiconductor or material (ii) amount of doping (iii) Temperature
Which one of the following is correct?
(a)Both (i)and(ii) (b)Only(ii) (c)Both (ii)and(iii) (d)(i),(ii)and(iii)
Directions: In the following questions, A statement of Assertion (A) is followed by a
statement of Reason (R). Mark the correct choice as.
A: If both Assertion and Reason are correct and the Reason is a correct explanation of
the Assertion.
B: If both Assertion and Reason are correct but Reason is not a correct explanation of
the Assertion.
C:If the Assertion is correct but Reason is incorrect.
D: If both the Assertion and Reason are incorrect
9 Assertion (A): The depletion layer in the p-n junction is free from mobile charge
carriers.
Reason (R) : There is no electric field across the junction barrier.

244
10 Assertion: The energy gap between the valence band and conduction band is
greater in silicon than in germanium.
Reason: Thermal energy produces fewer minority carriers in silicon than in
germanium
11 Assertion: The total current I in a semiconductor is the sum of electron current
and hole current.
Reason: In a semiconductor, motion of holes towards positive potential and
free electrons towards negative potential.
12 Assertion: A hole on p-side of a p n- junction moves to n-side just an instant
after drifting of charge carriers occurs across junction.
Reason: Drifting of charge carriers reduces the concentration gradient across
junction.
13 Assertion (A): When a p-n junction diode is reverse biased, a feeble reverse-
current flows known as reverse saturation current.
Reason (R): In reverse bias condition, the minority carries can cross the
junction.
14 Assertion : The resistivity of a semi-conductor increases with temperature.
Reason : The atoms of semi-conductor vibrate with larger amplitude as higher
temperatures thereby increasing its resistivity.
15 Assertion
resistance decreases.
Reason: The energy gap between conduction band and valence band is very
small.
16 Assertion: The number of electrons in a p-type silicon semiconductor is less
than the number of electrons in a pure silicon semiconductor at room
temperature.
Reason: It is due to law of mass action.

MCQ LEVEL 2

1 Which diagram below best illustrates a reverse biased diode?

245
 2 Free electrons have more mobility than free holes due to the following
reasons:
(a) they are light (b) they carry negative charge
(c) They mutually collide less d) they require low energy to continue their
motion
3 The energy needed for an electron to move from the valance band to the
conduction band in Germanium is
(a) 0.12 eV (b)0.72 eV (c)7.2 eV (d)None of these
4. For semiconductors, which of the ones that follow is the most suitable?
(a) large evacuated space (b)external heating arrangement
(c) low operating voltages (d)high power
5 When a forward bias is applied to a p-n junction, it
(a) raises the potential barrier. (b) reduces the majority carrier current to
zero. (c) lowers the potential barrier (d)None of the above.

6.
current is
(d) None of these
7 When an electric field is applied across a semiconductor,
(a) Electrons move from lower energy level to higher energy level in the
conduction band
(b) Electrons move from higher energy level to lower energy level in the
conduction band
(c) Holes in the valence band move from lower energy level to higher
energy level
(d) None of the above

Directions: In the following questions, A statement of Assertion (A) is followed by a

statement of Reason (R). Mark the correct choice as.
A: If both Assertion and Reason are correct and the Reason is a correct explanation of
the Assertion.
B: If both Assertion and Reason are correct but Reason is not a correct explanation of
the Assertion. C:If the Assertion is correct but Reason is incorrect.
D: If both the Assertion and Reason are incorrect
8 Assertion (A): For the same doping concentrations, n-type Si material has a
higher conductivity than p-type Si material.
Reason (R): In a semiconductor the electrons are less tightly bounded than
holes.
9 Assertion (A): n-type semiconductors of silicon are electrically charged.
Reason(R): In n-type semiconductors, the doped atom has no more valence
Electron than silicon.

246
 MCQ LEVEL 3

The filled and unfilled circles in the energy

band diagram of the material below represent
electrons and holes, respectively. The content
is

(a) insulator (b)metal (c)n-type

semiconductor (d)p-type semiconductor
2 As temperature rises, semiconductors' electrical resistance decreases
because... (a) temperature provides energy to electrons in valance Band to
cross the forbidden band (b) temperature absorbs from electrons
(c) semiconductor converts into perfect conductor due to increase in
temperature
(d) temperature provides energy to electrons in conduction Band to cross the
forbidden band
3 If the forward voltage in a semiconductor diode is doubled, the width of the

(a) Become half (b) Become one-fourth (c) Remain unchanged (d) Become
double
4. In order to convert sinusoidal signal into unidirectional signal which of the following
device is used?
(a) An amplifier (b) A rectifier (c) An oscillator (d) A modulator
5 Which of these graphs illustrates the potential difference between the equilibrium
p-side and n-side of a p-n junction?

6 A silicon diode is the diode that is displayed in the circuit. The potential difference
between points A and B will come to be

Directions: In the following questions, A statement of Assertion (A) is followed by a

statement of Reason (R). Mark the correct choice as.
A: If both Assertion and Reason are correct and the Reason is a correct explanation of
the Assertion.

247
B: If both Assertion and Reason are correct but Reason is not a correct explanation of
the Assertion.
C:If the Assertion is correct but Reason is incorrect.
D: If both the Assertion and Reason are incorrect
8 Assertion (A): Electron has higher mobility than hole in a semiconductor.
Reason(R): The mass of electron is less than the mass of the hole.
9 Assertion (A): When two semiconductor of p-type and n- type are brought in
contact, they form p-n junction which act like a rectifier.
Reason(R): A rectifier is used to convert alternating current into direct current.
10 Assertion (A): A p-n junction with reverse bias can be used as a photo-diode to
measure light intensity.
Reason(R): In a reverse bias condition the current is small but it is more sensitive
to changes in incident light intensity.

2 MARK QUESTIONS
LEVEL-1
1 Given that silicon and carbon have four valence electrons each, how may they be
distinguished?
2 Draw the n- and p-type semiconductors' energy band diagrams at a temperature
T >0K. With their energies, show the energy levels of the donor and acceptor.
3 Using a circuit diagram, describe how a p-n junction diode functions as a half-
wave rectifier.
4 Distinguish between intrinsic and extrinsic semiconductors.
5 As far as we are aware, despite having a lot of holes, p-type semiconductors are
electrically neutral. Why?

2 MARK QUESTIONS
LEVEL-2
1 Write differences between forward bias and reverse bias.
2 The V-I characteristic of a silicon diode is as shown
in the figure. Calculate the resistance of the diode
at (i) I = 5 mA and (ii) V = 20V

3 How does a doping agent modify a semiconductor's conductivity?

4 How does temperature cause semiconductors' resistivity to decrease?

248
 2 MARK QUESTIONS
LEVEL-3
1 What do energy bands mean? Based on energy band diagrams, list any two
characteristics that separate conductors, semiconductors, and insulators.
2 What happens when germanium metal is slightly doped with indium?
3 Who are the major charge carriers in n-type and p-type semiconductors?
4 Describe the formation of the depletion area and potential barrier in a junction
diode using a diagram.
5 Is using a full wave rectifier preferable to a half wave rectifier? Why?

3 MARK QUESTIONS
LEVEL-1
1 Draw a diode's voltage-current characteristic curve and highlight its key features.
2 Using a diagram, explain how the barrier potential and depletion region develop
at a p-n junction.
3 MARK QUESTIONS
LEVEL-2
1 In the following diagram, which bulb
out of B1 and B2 will glow and why?

2. Write any two distinguishing features between conductors, semiconductors and

insulators on the basis of energy band diagrams.
3. Name two important processes that occur during the formation of a p-n junction.
4 The maximum wavelength at which solid begin to absorb energy is 10000 Å.
Calculate the energy gap of a solid (in eV).
3 MARK QUESTIONS
LEVEL-3
1 (a) Distinguish between n-type and p-type semiconductors on the basis of energy
band diagrams.
(b) Compare their conductivities at absolute zero temperature and at room
temperature
2. Draw the input and output waveforms of half-wave rectifier and full wave rectifier.

249
 3. An a.c. signal is fed into two circuits X and Y
and the corresponding output in the two cases
have the wavefront shown in figure. Name the
circuit X and Y. Also draw their detailed circuit
diagram.
CASE STUDY/SOURCE BASED QUESTIONS
LEVEL-1
1.
On the basis of energy bands materials are also defined as metals, semiconductors
and insulators. These semiconductors are classified as intrinsic semiconductors and
extrinsic semiconductors also. Intrinsic semiconductors are those semiconductors
which exist in pure form. And intrinsic semiconductors have number of free electrons is
equal to number of holes. The semiconductors doped with some impurity in order to
increase its conductivity are called as extrinsic semiconductors. Two types of dopants
are used they are trivalent impurity and pentavalent impurity also. The extrinsic
semiconductors doped with pentavalent impurity like Arsenic, Antimony, Phosphorus
etc are called as n type semiconductors. In n type semiconductors electrons are the
majority charge carriers and holes are the minority charge carriers. When trivalent
impurity is like Indium, Boron, Aluminium etc are added to extrinsic semiconductors
then p type semiconductors will be formed. In p type semiconductors holes are majority
charge carriers and electrons are the minority charge carriers.
I) What is extrinsic semiconductor?
II) What is ratio of number of holes and number of electrons in an intrinsic
semiconductor?
III) Why doping is necessary?
IV) Majority charge carriers in p-type semiconductor are

2.
From Bohr's atomic model, we know that the electrons have well defined energy levels
in an isolated atom. But due to interatomic interactions in a crystal, the electrons of the
outer shells are forced to have
energies different from those in
isolated atoms. Each energy level
splits into a number of energy levels
forming a continuous band. The gap
between top of valence band and
bottom of the conduction band in
which no allowed energy levels for
electrons can exist is called energy

250
gap. Following are the energy band diagrams for conductor fig (ii), for insulators fig (b)
and for semiconductors fig (c).
i) In an insulator energy band gap is
a)Eg= 0eV (b) Eg> 3eV (c) Eg< 3eV (d) None of this
ii) In a semiconductor, separation between conduction and valence band is of the
order of
(a) Eg= 0eV (b) Eg> 3eV (c) Eg< 3eV (d) None of these
iii) (III) Based on the band theory of conductors, insulators and semiconductors,
the forbidden gap is smallest in
(a)conductor (b) insulators (c) semiconductors (d) All of these
iv) (IV) Solids having highest energy level partially filled with electrons are
(a)semiconductor (b) conductor (c) insulator (d) none of
these

5 MARK QUESTIONS
LEVEL-1
1 Draw V-I characteristics of a p-n junction diode. Answer the following questions
giving reasons.
(i) Why is the current under reverse bias almost independent of the applied
potential upto a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?

5 MARK QUESTIONS
LEVEL-2
1 i) How are p- type semiconductors produced?
ii) The forbidden band energy of silicon is 1.1eV. What does it mean?
iii) What is an ideal diode?
iv) Figure shows two p-n junction diode
along with a resistance and a d.c battery
E. Indicate the path and the direction of
appreciable current in the circuit.

5 MARK QUESTIONS
LEVEL-3
1 i)What is doping? Write the name of the impurities used to fabricate p type & n
type Semiconductor.

251
 ii) Draw the energy band diagram of conductor , insulator and semiconductor.

CASE STUDY/SOURCE BASED QUESTIONS

LEVEL-2
1.
Full Wave Rectifier The process of
converting alternating
voltage/current into direct
voltage/current is called rectification.
Diode is used as a rectifier for
converting alternating
current/voltage into direct
current/voltage. Diode allows
current to pass only, when it is
forward biased. So, if an alternating
voltage is applied across a diode, the current flows only in that part of the cycle when
the diode is forward biased. This property is used to rectify the current/voltage.

i) If in a p-n junction, a square input signal of 10V is applied as shown

ii) In figure, the input is across the terminals A and C and the output is across B
and D. Then, the output is

252
iii) Which of the following is not true about a rectifier circuit?
(a) It can convert DC to AC. (b) It can convert AC to DC.
(c)It can shift voltage level .(d)None of these
iv) In the given circuit,

Capacitor c is used
(a) for storing potential energy
(b) as a bypass to DC component to get AC in RL
(c) to remove sparking
(d) as a bypass to AC component to get DC in RL
v) The ratio of output frequencies of half-wave rectifier and a full wave rectifier,
when an input of frequency 200 Hz is fed at input, is
(a) 1:2 (b)2: 1 (c) 4 :1 (d) 1 : 4

CASE STUDY/SOURCE BASED QUESTIONS

LEVEL-3
1.When the diode is forward biased, it is found that beyond forward voltage V = Vk,
called knee voltage, the conductivity is very high. At this value of battery biasing for
p-n junction, the potential barrier is overcome and the current increases rapidly with
an increase in forwarding voltage. When the diode is reverse biased, the reverse
bias voltage produces a very small current about a few microamperes which almost
remains constant with bias. This small current is reverse saturation current

i) i) In which of the following figures, the p-n diode is forward biased

(a) a,b and d (b) c only (c) c and a (d) b and d

253
 ii) Based on the V-I characteristics of the diode, we can classify diode as
(a) bi-directional device (b) ohmic device
(c) non-ohmic device (d) passive element
iii) In the case of forwarding biasing of a p-n junction diode, which one of the
following statement is correct?
(a) effective barrier potential decreases
(b) majority charge carriers begins to flow away from junction
(c) width of depletion layer increases
(d) effective resistance across the junction increases
iv) If an ideal junction diode is connected as shown, then the value of the current I is.

(a) 0.005 (b) 0.02 A (c) 0.01 A (d) 0.1A

2.
When the diode is forward biased, it is found that beyond forward voltage V = Vk,
called knee voltage, the conductivity is very high. At this value of battery biasing
for p-n junction, the potential barrier is overcome and the current increases rapidly
with increase in forward voltage. When the diode is reverse biased, the reverse
bias voltage produces a very small current about a few microamperes which almost
remains constant with bias. This small current is reverse saturation current. 36. In
which of the following figures, the p-n diode is forward biased.
i) In which of the following figures, the p-n diode is forward biased

ii) Based on the V-I characteristics of the diode, we can classify diode as
(a) bi-directional device (b) ohmic device
(c) non-ohmic device (d) passive element
iii) The V-I characteristic of a diode is shown in the figure. The ratio of forward to
reverse bias resistance is

254
iv) If an ideal junction diode is connected as shown, then the value of the current I
is

COMPETENCY BASED QUESTIONS

MCQ
1 The diagram below shows a transformer whose output terminals are 01
connected to two diodes D1 and D2

255
2 A 10V battery is attached to 3 01
resistors and two ideal diodes as
shown below. What will be the
reading of the ammeter?

a)1/6 A b)1/5 A c) 1/4 A d)3/14

A
3 What is energy required for an electron to jump to forbidden band in Silicon 01
at room temperature?
a) 0.01 eV b)0.05 eV c)0.7 eV d)1.1 Ev
4 A battery, resistance, and semiconductor device are connected in a series 01
circuit. The circuit is determined to be carrying a current. The current almost
completely disappears if the battery's polarity is switched. The apparatus
could be
a) Si Semiconductor b) Si with III-A impurity c) Si With V-
A impurity d) diode

COMPETENCY BASED QUESTIONS

2 MARK QUESTIONS
1 A sample of germanium doped with pentavalent impurity is heated to 300 K. 02
Determine the electron and hole counts if the pentavalent impurity
concentration is 12 x 1017 cm-3. Assume that the impurity atom has fully
ionized. Given: 2.4 x 1013 cm-3 is the inherent carrier concentration.
2 When a forward-biased p-n junction experiences a voltage supply that 02
exceeds the potential barrier, the diffusion current increases exponentially in
proportion to the number of holes that diffuse into the n-region. Will the
diffusion current eventually reach zero and the hole concentration in the p-
and n-regions become equal? Give reasons for your response.
3 The threshold voltage for diodes D1 and D2 are 0.3 V and 0.7 V respectively. 02
In circuit I, both the diodes D1 and D2 are forward biased. In circuit II, D1 is
forward biased whereas D2 is reverse biased. Determine current through the
diodes in series, ID and voltage Vo in each of the two given circuits.

256
4 A p-n junction diode has a depletion layer of thickness 500 nm and an electric 02
field 16 x 105 V/m.
a. Find the barrier potential created.
b. Determine the minimum kinetic energy (in eV) that the conduction
electrons must have so that they can diffuse from n-side onto p-side, in case
of:
i. the junction is unbiased
ii. the junction is forward biased at 0.5 V
iii. the junction is reverse biased at 0.5 V
5 02
diode in reverse bias. The current becomes 4 times in case the pn junction
diode is forward biased. Determine the diffusion current that flows through
the given diode in case it is:
a. unbiased b. reverse biased c. forward biased

COMPETENCY BASED QUESTIONS

3 MARK QUESTIONS
1 The graph below shows the variation in the mobility of electrons and holes 03
for a Si semiconductor with doping concentration at 300 K.

The pentavalent doping concentration is 10 15 cm-3 and the concentration of

intrinsic charge carriers at 300 K is about 1010 cm-3
(a) Find the concentration of majority and minority charge carriers.
(b) What is the conductivity of silicon at 300 K? (Calculate conductivity
assuming majority charge carriers only.)
The magnitude charge on an electron/hole is 1.6 x 10 -19 C. Assume complete
dopant ionization.
2 A certain biasing voltage is applied across the pn junction with an initial 03

257
 potential barrier of Vo. The holes approach the pn junction with a non-zero
initial kinetic energy from either p or the n- side depending upon the nature
of biasing applied.
a. If the holes approach the pn junction from p-side,
i. What type of biasing must have been applied across the pn junction?
ii. Will the kinetic energy of the holes increase or decrease while crossing the
junction? Give reason for your answer.
b. If the holes approach the pn junction from n-side,
i. What type of biasing must have been applied across the pn junction?
ii. Will the kinetic energy of the holes increase or decrease while crossing the
junction? Give reason for your answer.
3 03

(a) What is the potential drop across the diode?

(b) Is the diode forward-biased or reverse-biased? Draw a circuit diagram to
represent the above connections.

COMPETENCY BASED QUESTIONS

5 MARK QUESTIONS
1 The image below shows a circuit with three diodes and three resistors 05
connected to an AC source with an rms voltage V.
What is the average power delivered over one full cycle of AC in the above
circuit? Show your calculations and arrive at the final answer in terms of V
and R. (Assume the diode is ideal.)

258
2 In a forward biased, ideal pn diode, the applied forward potential is opposite 05
to the potential barrier of the depletion region. A small forward voltage is
sufficient to overcome the potential barrier. Once eliminated, the junction
resistance is reduced to zero and an ideal pn junction has zero ohmic
potential drop across itself. The voltage at which the current starts to increase
rapidly is called threshold
voltage or cut in voltage or knee
voltage of the pn diode. If the
diode voltage is more than
knee voltage, it conducts easily
otherwise it conducts poorly.
For a silicon diode,
V(threshold) = 0.7 V
a. In the circuit given here, determine the voltage across an ideal silicon diode
D and resistor R and the current through the diode and resistor, if E = 3 V
and R = 2 k-ohm.
b. How will the values in part (a) change in case E is made 0.3 V?
OR
How will the values in part (a) change in case the terminals of E are reversed?

CCT/SOURCE BASED QUESTIONS

1 The graph below represents the
variation of n/ND with temperature
for an extrinsic n-type
semiconductor. The temperature
range indicated on the X-axis is
divided into three regions,
Regions I, II and III.
Study the graph and answer the
following questions.

I) Which region(s) has the maximum number of unionized donor atoms? 1

ii) Which of the following relation is definitely TRUE for the semiconductor in 1
region II? (ne - concentration of free electrons; nh concentration of holes)
iii) In which region(s) are thermally generated electrons comparable to donor 1
electrons?
IV) In region III the semiconductor behaves like? 1

259
 SELF ASSESSMENT PAPER
TOTAL MARKS 25
SECTION A

Q MARKS
01 Which of the following statements is correct? 01
(a) Hole is an antiparticle of electron.
(b) Hole is a vacancy created when an electron leaves a covalent bond.
(c) Hole is the absence of free electrons.
(d) Hole is an artificially created particle.
02 A potential barrier of 0.3 V exists across a p-n junction. If the depletion 01
region is 1 µm wide, what is the intensity of electric field in this region?

03 The breakdown in a reverse biased p-n junction diode is more likely to 01

occur due to
(a) large velocity of the minority charge carriers if the doping
concentration is small
(b) large velocity of the minority charge carriers if the doping
concentration is large
(c) strong electric field in a depletion region if the doping concentration
is small
(d) none of these
04 In a full wave junction diode rectifier the input ac has rms value of 20 V. 01
The transformer used is a step up transformer having primary and
secondary turn ratio 1 : 2. The dc voltage in the rectified output is
(a) 12 V (b) 24 V (c) 36 V (d) 42 V
Directions: In the following questions, A statement of Assertion (A) is followed by a
statement of Reason (R). Mark the correct choice as.
A: If both Assertion and Reason are correct and the Reason is a correct explanation of
the Assertion.
B: If both Assertion and Reason are correct but Reason is not a correct explanation of
the Assertion.
C:If the Assertion is correct but Reason is incorrect.
D: If both the Assertion and Reason are incorrect
05 Assertion (A) : The half-wave rectifier work only for positive half cycle 01
of ac.

260
 Reason (R) : In half-wave rectifier only one diode is used.
06 Assertion (A) : In a semiconductor diode, the reverse biased current is 01
due to drift of free electrons and holes.
Reason (R) : The drift of electrons and holes is due to thermal
excitations

SECTION B
07 Explain with the help of a diagram the formation of depletion region and 02
barrier potential in a p-n junction.
08 Why are elemental dopants for silicon or germanium usually chosen 02
from group XIII or group XV ?

SECTION C
08 In half-wave rectification, what is the output frequency? If the input 03
frequency is 50 Hz, what is the output frequency of a full wave rectifier
for the same input frequency?
09 i) Differentiate between P-type and N-type semiconductors 03
ii) Draw their energy level diagrams.

SECTION D
CASE BASED STUDY
10
Semiconductors consist of Valence band and conduction band. On the basis of energy
bands materials are also defined as metals, semiconductors and insulators. In case
of metals, conduction band and Valence band overlaps with each other due to
which electrons are easily available for conduction. In case of insulators, there is
some energy gap between conduction band and Valence band due to which no
free electrons are easily available for conduction. And in semiconductors, there is
a small energy gap between conduction band and Valence band and if we give
some external energy then electron from Valence band goes to conduction band
due to which conduction will be possible. These semiconductors are classified as
intrinsic semiconductors and extrinsic semiconductors also. Intrinsic
semiconductors are those semiconductors which exist in pure form. And intrinsic
semiconductors has number of free electron is equal to number of holes. The
semiconductors doped with some impurity in order to increase its conductivity are
called as extrinsic semiconductors. Two types of dopants are used they are
trivalent impurity and pentavalent impurity also. The extrinsic semiconductors
doped with pentavalent impurity like Arsenic, Antimony, Phosphorus etc are called
as n type semiconductors. In n type semiconductors electrons are the majority

261
 charge carriers and holes are the minority charge carriers. When trivalent impurity
is like Indium, Boron, Aluminium etc are added to extrinsic semiconductors then p
type semiconductors will be formed. In p type semiconductors holes are majority
charge carriers and electrons are the minority charge carriers.
i) In case of p-type semiconductors__
a) nh<< ne b) nh = ne c) nh>> ne d) nh= ne = 0
ii) An intrinsic semiconductor behaves like _____ at T = 0K.
a) conductors b) semiconductors c) insulators d) superconductors
iii) If the energy band gap Eg> 3 eV then such materials are called as
a) conductors b) semiconductors c) insulators d) superconductors
iv) P-
a) zinc b) Magnesium c) Phosphorous d) Aluminum

SECTION E
11 (i) Can a slab of p-type semiconductor be physically joined to another 05
n-type semiconductor slab to form p-n junction? Justify your answer.
(ii) In a p-n junction diode, the forward bias resistance is low as
compared to the reverse bias resistance. Give reason.

************

262
Chapter 14: Semiconductor Electronics: Materials,
Devices and Simple Circuits

The barrier potential develops a barrier field in the direction n to p side.

This barrier field immediately pushes the electron towards the n- side and
holes towards the p- side, and then a current is set up by the barrier field
from n to p side. This current is known as drift current.
When a p-n junction is reverse biased, then the majority charge carriers
cannot cross the junction. So, no forward current flows. But in reverse
direction, a feeble current flows which is known as reverse saturation
current.
The resistivity of semiconductor decreases with increase in temperature
as more electrons jump into conduction band increasing its conductivity.
The resistivity of semiconductor decreases with increase in temperature
as more electrons jump into conduction band increasing its conductivity
S.NO INRINSIC EXTRINSIC SEMICONDUCTOR
SEMICONDUCTOR
1 Pure form of Impure form of semiconductor.
semiconductor.
2 Conductivity is low Conductivity is higher than
intrinsic semiconductor.
3 The no of holes is In n-type, the no. of electrons is
equal to no of free greater than that of the holes and
electrons in p-type, the no. holes is greater
than that of the electrons.
4 The conduction The conduction depends on the
depends on concentration of doped impurity
temperature. and temperature.
Sr.
P-type semiconductor n-type semiconductor
No
Obtained by adding trivalent impurity to Obtained by adding pentavalalnt impurity to
1.
pure semiconductors pure semiconductors
2. Trivalent impurity accepts the electron pentavalalnt impurity donates the electron
3. Electrical conductivity is due to holes Electrical conductivity due to electrons.
4. The majority charge carriers are holes The majority charge carriers are electrons
The impurity atoms (holes)are present just The impurity atoms (electrons)are present just
5.
above the top of valance band below the bottom of band
6. Ex. GeAl Ex. GeAS, GaAsP
 Forward

bias
Current(mA)

Voltage(V)
Reverse

bias
Sr.
P-type semiconductor n-type semiconductor
No
Obtained by adding trivalent impurity Obtained by adding pentavalalnt
1.
to pure semiconductors impurity to pure semiconductors
pentavalalnt impurity donates the
2. Trivalent impurity accepts the electron
electron
3. Electrical conductivity is due to holes Electrical conductivity due to electrons.
The majority charge carriers are
4. The majority charge carriers are holes
electrons
The impurity atoms (holes)are present The impurity atoms (electrons)are
5.
just above the top of valance band present just below the bottom of band
6. Ex. GeAl Ex. GeAS, GaAsP
c) nh>> ne
no of holes are more than no of electrons
c) insulators
At T=0K no electrons in conduction band
c) insulators
above 3 eV it is not possible for the electron to jump to forbidden
band
d) Aluminum
Al is from III-A group gives holes in valance band