EE 332

DEVICES AND CIRCUITS II

Chapter 2
COMMON EMITTER-COMMON SOURCE
with RE-RS

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 Lecture Goals
 Common-Emitter with RE circuit
+ Calculating Input resistance, Output resistance,
+ Calculating Voltage gain, Current gain, Power gain
+ Input voltage range for linear condition of amplification circuit
 Common-Source with RS circuit
+ Calculating Input resistance, Output resistance,
+ Calculating Voltage gain, Current gain, Power gain
+ Input voltage range for linear condition of amplification circuit
 Discussion and Summary

Chap 1 - 2
 Signal Injection and Extraction: BJT

 In forward-active region,

v 
 
i  I exp BE 

C S 
V 
 T 
I v



i  S exp BE 
E   V 
F  T 

I v  

i  S exp BE  
B  V  
F T  

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Signal Injection and Extraction: MOSFET

 In pinch-off region,

Kn  
2
i  v V
 
D TN
2 GS 

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 Amplifier Families

 Constraints for signal injection and extraction yield three

families of amplifiers
+ Common-Emitter (C-E)/Common- Source (C-S)
+ Common-Base (C-B)/Common- Gate (C-G)
+ Common-Collector (C-C)/Common- Drain (C-D)
 All circuit examples here use the four-resistor bias circuits
to establish Q-point of the various amplifiers
 Coupling and bypass capacitors are used to change the ac
equivalent circuits.

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 5

7/1/03 McGraw-Hill
COMMON-EMITTER (CE) AMPLIFIER WITH RE

Chap13 - 6
COMMON-EMITTER (CE) AMPLIFIER WITH RE

Chap13 - 7
INPUT RESISTANCE

Chap13 - 8
SIGNAL SOURCE VOLTAGE GAIN

Chap13 - 9
IMPORTANT LIMITS AND MODEL SIMPLIFICATIONS

Chap13 - 10
COMMON-EMITTER VOLTAGE GAIN FOR LARGE
EMITTER RESISTANCE

Chap13 - 11
SMALL-SIGNAL LIMIT FOR CE AMPLIFIER

R  r  (o 1)R
iB  E
 r (1 g m R )
E
R  R // R
in B iB

v  v  ve  v  gmv R  v (1 gmR )

b be be be E be E

v v v i(R  R ) v R R
i  i b  I in  b  I in (1 g R )
m E
v v v iR v R
be b be in be in

R R R R
v v I in (1 g R )  0,005 I
m
in (1 g R )
m E


V
i be R E R
in in
Chap13 - 12
12
RESISTANCE AT COLLECTOR OF BJT

Chap13 - 13
RESISTANCE AT COLLECTOR OF BJT

Chap13 - 14
 RESISTANCE AT COLLECTOR OF BJT

RiC

Output Resistance of overrall CE

Amplifier

Chap13 - 15
 Inverting Amplifiers: Common-Emitter and
Common-Source Circuits

AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 16

7/1/03 McGraw-Hill
Inverting Amplifiers: Common-Emitter and
Common-Source Circuits

RiC RiD
RiB RiG

AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 17

7/1/03 McGraw-Hill
 Terminal voltage gain of CS

v g v R g R
CS  ds   m gs L
 m L
Avt
v v g v R 1 g R
gs gs m gs S m S

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 18

7/1/03 McGraw-Hill
 Condition of vi for linear amplification

R 
iG
R  R // R  R
in G iG G

vg
vg  vgs  vs  vgs  gmvgsR  vgs (1 gmR )   (1 gmR )
S S vgs S

v v v i(R  R ) vg R  R
i  i g  I G   I G (1 g R )
m S
vgs vg vgs iR vgs R
G G

R R R R
v  vgs I G (1 gmR )  0,2(V  V ) I G (1 g R )
m S


V
i R S GS TN R
G G
19
 Inverting Amplifiers: Input Resistance and
Overall Voltage Gain

Input resistance looking into the base Overall voltage gain is

terminal is given by
v  v  v  v 
v CE  o   o  b   CE  b 
Av Avt
v  v  v   v 
RiB  b  r  (o 1)RE i  b  i   i 
i  
RiB  r (1 gm R ) R RiB 
E  CE  B 
Avt
R   R RiB  
For C-S Amplifier, r    I  B 

RCS   
in R  
For C-S Amplifier, CS  G 
Av Avt  
R R 

I G 


Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 20

7/1/03 McGraw-Hill
(Example 1)

 Problem: Find Q-point; RiB; Rin; Avt; Av; Ai; Ap; vimax for linear
condition of this amplifier.
 Given data: RI, R1, R2, R3, R4 ; β =100; VBE = 0.7V.
 Assumptions: Small-signal operating conditions.
 Analysis: For C-E Amplifier,

Chap 1 - 21
(Example 1)

 Problem: Find overall voltage gain.

 Given data: Q-point values and values for RI, R1, R2, R3, R7 ,for both
BJT and FET as well as values for RE and RS .
 Assumptions: Small-signal operating conditions.
 Analysis: For C-E Amplifier,

I  0.245mA;V  3.39V
C CE
Chap 1 - 22
Inverting Amplifiers: Voltage Gain Calculations
(Example 1)

Fig 14.7
Chap 1 - 23
Inverting Amplifiers: Voltage Gain Calculations
(Example 1)
 Problem: Find overall voltage gain.
 Given data: Q-point values and values for RI, R1, R2, R3, R7 ,for both
BJT and FET as well as values for RE and RS .
 Assumptions: Small-signal operating conditions.
 Analysis: For C-E Amplifier,

I  0.245mA; V  3.39V
C CE
g m  40 I  40x0.245mA  9.8mS
C

o  100
r   10.2 K
gm 9.8mS

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 24

7/1/03 McGraw-Hill
Inverting Amplifiers: Voltage Gain Calculations
(Example 1)

 Problem: Find overall voltage gain.

 Given data: Q-point values and values for RI, R1, R2, R3, R7 ,for both
BJT and FET as well as values for RE and RS .
 Assumptions: Small-signal operating conditions.
 Analysis: For C-E Amplifier,

R  R R 160kΩ 300kΩ 104kΩ

B 1 2
RiB  r  (o 1) RE 10kΩ  (101) 3kΩ   313kΩ
R  R R  22kΩ 100kΩ 18kΩ
L C 3

 
 R R RiB 
CE   o L  100(18kΩ)  5.75 CE CE 
Avt Av  Avt B
 
  5.61
R   R RiB  
RiB 313kΩ
 I  B 
Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 25
7/1/03 McGraw-Hill
 Inverting Amplifiers: Common-Emitter and
Common-Source Circuits

AC equivalent for C-E Amplifier AC equivalent for C-S Amplifier

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 26

7/1/03 McGraw-Hill
Inverting Amplifiers: Voltage Gain Calculations
(Example contd.)

 Analysis: For C-S Amplifier,

R  R R  1.5MΩ 2.2 MΩ  892kΩ

G 1 2

R  R R  22kΩ 100kΩ  18kΩ

L D 7
g R
CS m L   (0.491mS)(18kΩ)  4.46
Avt  
1 g R 1 (0.491mS)(2kΩ)
m S
 R 
CS CS  G   4.45
Av  Avt 
R  R 
 I G

Jaeger/Blalock Microelectronic Circuit Design

7/1/03 McGraw-Hill
Chap 14 - 27
 Inverting Amplifiers: Output Resistance

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 28

7/1/03 McGraw-Hill
 Inverting Amplifiers: Output Resistance

vx  vr  ve  (ix  oi)ro  ve
  
ve  ix   R  r  R 
  th  E
R
i  ix E
R  R  r
E th

 o R 

R  ro 1 E 
 
E th  
iC 
 R R r 


Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 29

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Inverting Amplifiers: Output Resistance (contd.)

 o R 

R  ro 1
 E 
iC 
 R  R  r 

 E th 

Assuming (r  RE )  R and ro  RE , with o  gmr

th
 
R  ro 1 gm (r R )   ro   (r R )
iC  E  f E
 R   (r R ) …….for gm (r RE )  1
iC f E

Finite current gain of BJT places an upper limit on size of output

resistance. r appears in parallel with RE if Rth is neglected. If we let RE be
infinite, maximum value of output resistance is RiC  (o 1)ro
Output resistance of C-S amplifier is given by,
R  ro 1 gm R 
iD  S
Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 30
7/1/03 McGraw-Hill
 Current gain and Power gain of CE amplifier with RE

gmR R
Av   L  in
1 g m R R R
E I in
Current gain
vo
i R v R  Rin R R
A  o  3  o I  A I in
i v v
i i v R R
i R R i 3 3
I in
Power gain
Ap  Av A
i

31
Current gain and Power gain of CS amplifier with RS

gmR R
Av   L  G
1 g m R R  R
S I G
Current gain
vo
i R v R R R R
A  o  3  o I G A I G
i v v
i i v R R
i i 3 3
R R
I G
Power gain
A p  Av A
i

32
Exercise

Chap13
Chap 1 --33
33
Inverting Amplifiers: Common-Emitter

Fig 14.7

Chap 1 - 34
Solution

Chap13
Chap 1 --35
35
Solution

Chap13
Chap 1 --36
36
 Inverting Amplifiers: Summary

 C-E and C-S amplifiers have similar voltage gains.

 C-S amplifier provides extremely high input resistance but that of C-E is also
substantial due to the f RE term.
 Output resistance of C-E amplifier is much higher than that of C-S amplifier as
f is much larger for BJT than for FET.
 Input signal range of C-E amplifier is also higher than that of C-S amplifier.
 Current gains of both are identical to those of individual transistors.
 Following transformation is used to simplify circuit analysis by absorbing RE
(or RS ) into the transistor (For FET, current gain and input resistance are
infinite).
gm r '  r (1 gm R ) ro '  ro (1 gm R )
gm '  E E
1 g m R
E
o'  gm' r '  o  '  gm' ro'  
f f

Jaeger/Blalock Microelectronic Circuit Design Chap 14 - 37

7/1/03 McGraw-Hill
End of Chapter 2

Chap 1 - 39