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ED - Final Lecture-1

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22 views16 pages

ED - Final Lecture-1

Uploaded by

c.sunjid707
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Electronic Devices

Final Term
Lecture - 01

Reference book:
Electronic Devices and Circuit Theory
(Chapter-5)
Robert L. Boylestad and L. Nashelsky , (11th Edition)
Faculty of Engineering
American International University-Bangladesh
OBJECTIVES
• Become familiar with there , hybrid, and hybrid p models for the BJT transistor.

• Learn to use the equivalent model to find the important ac parameters for an amplifier.

• Understand the effects of a source resistance and load resistor on the overall gain and
characteristics of an amplifier.

• Become aware of the general ac characteristics of a variety of important BJT configurations.

• Begin to understand the advantages associated with the two-port systems approach to single-
and multistage amplifiers.

• Develop some skill in troubleshooting ac amplifier networks.

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING
• A model is an equivalent circuit that represents the AC characteristics of the
transistor.

• A model uses circuit elements that approximate the behavior of the transistor.

• There are two models commonly used in small signal AC analysis of a transistor:
• re model
• Hybrid equivalent model

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING
Capacitors chosen with very
small reactance at the frequency
of application → replaced by low-
resistance or short circuit.

Removal of the dc supply and insertion of


the short-circuit equivalent for the
capacitors.

Faculty of Engineering
American International University-Bangladesh
BJT TRANSISTOR MODELING

Circuit redrawn for small


signal ac analysis

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
The re Transistor Model (Common Emitter Configuration)

Faculty of Engineering
American International University-Bangladesh
COMMON-BASE CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON-BASE CONFIGURATION

equivalent circuit
Common Base re
The output resistance r0 is quite
high. typically extend into the
MΩ range.

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS CONFIGURATION

INPUT IMPEDANCE, Zi

𝒁𝒊 = 𝑹𝑩 ‖ β𝒓𝒆

𝒁𝒊 ≅ β𝒓𝒆 |𝑹 ≥ 𝟏𝟎β𝒓𝒆
𝑩

OUTPUT IMPEDANCE, Zo
VOLTAGE GAIN, Av
𝒁 𝒐 = 𝑹 𝑪 ‖ 𝒓𝒐
𝑽 𝑽𝒊
𝑽𝒐 = −β𝑰𝒃 (𝑹𝑪 ‖ 𝒓𝒐 ) = −β( β𝒓𝒊 ) (𝑹𝑪 ‖ 𝒓𝒐 ); 𝑰𝒃 =
𝒆 β𝒓𝒆
𝒁𝒐 ≅ 𝑹𝑪 |𝒓 ≥ 𝟏𝟎𝑹𝑪
𝒐
𝑽𝒐 (𝑹𝑪 ‖ 𝒓𝒐 ) 𝑹𝑪
𝑨𝒗 = =- , 𝑨𝒗 = - |
𝑽𝒊 𝒓𝒆 𝒓𝒆 𝒓𝒐 ≥ 𝟏𝟎𝑹𝑪

Faculty of Engineering
American International University-Bangladesh
COMMON EMITTER FIXED BIAS PHASE RELATIONSHIP

𝑽𝒐 (𝑹𝑪 ‖ 𝒓𝒐 )
𝑨𝒗 = =-
𝑽𝒊 𝒓𝒆

Demonstrating the 180°


phase shift between input
and output waveforms.

Faculty of Engineering
American International University-Bangladesh
EXAMPLE
• EXAMPLE 5.1: For the network of Fig. 5.25 :
• Determine re, Zi (with ro = ∞), Zo (with ro = ∞), Av (with ro = ∞) and Repeat with ro = 50 kΩ.

Faculty of Engineering
American International University-Bangladesh
End of Lecture-1

Faculty of Engineering
American International University-Bangladesh
16

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