AT-64023

Up to 4 GHz Linear Power Silicon Bipolar Transistor

Data Sheet

Description Features
The AT-64023 is a high performance NPN silicon bipolar • High Output Power:
transistor housed in a hermetic BeO flange package for 27.5 dBm Typical P1 dB at 2.0 GHz
good thermal characteristics. This device is ­designed for 26.5 dBm Typical P1 dB at 4.0 GHz
use in medium power, wide band amplifier and oscillator • High Gain at 1 dB Compression:
applications operating over VHF, UHF and microwave 12.5 dB Typical G1 dB at 2.0 GHz
frequencies. 9.5 dB Typical G1 dB at 4.0 GHz
Excellent device uniformity, performance and reliability are • 35% Total Efficiency
produced by the use of ion-implantation, self-alignment • Emitter Ballast Resistors
techniques, and gold metallization in the fabrication of
these devices. The use of ion-implanted ballast resistors • Hermetic, Metal/Beryllia Stripline Package
ensures uniform current distribution through the multiple
emitter fingers.
230 mil BeO Package

Ground

Input Output
AT-64023 Absolute Maximum Ratings
Absolute Thermal Resistance [2,4]:
Symbol Parameter Units Maximum[1] θjc = 40°C/W
VEBO Emitter-Base Voltage V 2.2 Notes:
VCBO Collector-Base Voltage V 40 1. Permanent damage may occur if any
of these limits are exceeded.
VCEO Collector-Emitter Voltage V 20
2. Tcase = 25°C.
IC Collector Current mA 200 3. Derate at 25 mW/°C for Tc > 80°C.
PT Power Dissipation [2,3] W 3 4. The small spot size of this technique
Tj Junction Temperature °C 200 results in a higher, though more
accurate determination of θjc than
TSTG Storage Temperature °C -65 to 200 do alternate methods. See MEASURE-
MENTS section “Thermal Resistance”
for more information.

Electrical Specifications, TA = 25°C

Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S 21E| 2 Insertion Power Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dB 6.5
f = 4.0 GHz 2.0
P1 dB Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 27.5
VCE = 16 V, IC = 110 mA f= 4.0 GHz 25.5 26.5
G1 dB 1 dB Compressed Gain; VCE = 16 V, IC = 110 mA f = 2.0 GHz dB 12.5
f = 4.0 GHz 7.0 9.5
ηT Total Efficiency[1] at 1 dB Compression: f = 4.0 GHz % 35.0
VCE = 16 V, IC = 110 mA
hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA — 20 50 200
ICBO Collector Cutoff Current; VCB = 16 V µA 100
IEBO Emitter Cutoff Current; VEB = 1 V µA 5.0

Note:
1. ηT = (RF Output Power)/(RF Input Power + VCE I C).


AT-64023 Typical Performance, TA = 25°C
29 18 30
POUT

25
28
15
20 40

POWER OUT (dBm)

27 hT
150 mA
P1 dB (dBm)

G1 dB (dB)
110 mA 12 15 30

EFFICIENCY (%)
26
150 mA 10 20
110 mA
9 70 mA
25
5 10

70 mA
24 6 0 0
1.0 2.0 3.0 4.0 1.0 2.0 3.0 4.0 0 5 10 15 20 25
FREQUENCY (GHz) FREQUENCY (GHz) POWER IN (dBm)
Figure 1. Power Output @ 1 dB Gain Compression Figure 2. 1 dB Compressed Gain vs. Frequency and Figure 3. Output Power and Efficiency vs. Input
vs. Frequency and Collector Current. VCE = 16 V. Collector Current. VCE = 16 V. Power. VCE = 16 V, IC = 110 mA, f = 4.0 GHz.

35

30

MSG
25

20
GAIN (dB)

15 MAG

10 |S21E|2

0
0.1 0.3 0.5 1.0 3.0 5.0
FREQUENCY (GHz)

Figure 4. Insertion Power Gain, Maximum Available

Gain and Maximum Stable Gain vs. Frequency.
VCE = 16 V, IC = 110 mA.

Typical Scattering Parameters, Common Emitter, ZO = 50Ω, TA = 25°C, VCE = 16 V, IC = 110 mA

Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .54 -124 28.2 25.71 135 -33.3 .022 42 .72 -51
0.5 .80 -178 17.6 7.57 78 -29.5 .034 18 .33 -119
1.0 .80 162 11.9 3.92 47 -28.6 .037 10 .33 -142
1.5 .80 147 8.6 2.70 21 -27.9 .040 12 .40 -156
2.0 .78 133 6.3 2.07 -4 -27.6 .042 1 .48 -169
2.5 .77 127 5.1 1.80 -24 -25.5 .053 -5 .58 -178
3.0 .73 116 3.8 1.56 -51 -25.0 .056 -20 .67 170
3.5 .66 106 2.9 1.40 -79 -25.8 .051 -28 .78 156
4.0 .60 99 2.2 1.28 -109 -27.2 .044 -49 .86 142
4.5 .55 98 1.4 1.18 -141 -31.2 .028 -70 .93 127
5.0 .54 99 0.6 1.07 -175 -40.9 .009 -144 .93 112

S-parameters at other bias conditions are available on the Avago Design Pak disk.


Ordering Information
Part Number No. of Devices
AT-64023 10

230 mil BeO Package Dimensions

.725 ± .030
18.42 ± .76

.050
.800 1.27
20.32
.562
14.27
3
1
.120 Notes:
3.05
(unless otherwise specified)
.130 1. Dimensions are in
3.30 mm
2. Tolerances
2 in .xxx = ±0.005
.230 mm .xx = ±0.13
5.84
.130 ± .010
3.30 ± .25
.004 ± .002
.10 ± .05 .060
1.52

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Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2658EN
AV02-1221EN - November 24, 2008