SYLLABUS

CHINHOYI UNIVERSITY OF TECHNOLOGY
Name of the Lecturer: Eng. S. Magidi
Name of Module and Code: ANALOGUE ELECTRONICS
Item Details
Department Mechatronic Engineering

Year 2024
Programme Name BEng Hons Mechatronic Engineering
Module Code CUMEM 217
Module Name ANALOGUE ELECTRONICS
Duration of Module 60 hours
Module Lecturer/s Eng. S. Magidi
E-mail address of Co- [email protected]
ordinator
Module synopses
Student Learning On successful completion of the course
Outcome:
 The student can acquire the basic knowledge of electronic
circuits, semiconductor devices, thus being prepared to pursue
any area of engineering spectrum in depth as desired.
 The students will be able to effectively understand electronic
circuits and lead the exploration
of new applications and techniques for their use.
UNIT TOPICS
1 Semiconductor Diodes
Introduction, Semiconductor materials, covalent bond and intrinsic
materials, energy levels, extrinsic materials: p-type and n-type
semiconductors, semiconductor diodes, ideal versus practical diodes,
resistance levels, diode equivalent circuits, transition and diffusion
capacitance, reverse recovery time, diode specification sheet, zener
diode, Light Emitting diode, Tunnel diode, schottky diode, varicap
diode
2 Diode Circuits
Introduction, Load –line Analysis, Series Diode configuration, Parallel
and series parallel, configurations, Typical diode circuits, Half-wave &
Full wave rectifier, Clippers, Clampers, Zener Diode as voltage
regulators, Voltage multiplier circuits, Practical Applications of diode
circuits
3 Bipolar Junction Transistor
Introduction, Transistor construction, Operation, Common-base
configuration
& characteristic, Transistor Amplifying action, Common-Emitter
configuration & characteristic, Common-collector configuration &
characteristic, Limits of operation, study of Transistor data sheet
4 DC-biasing of Bipolar Junction Transistors
Introduction, operating point, Fixed biased configuration, Emitter-bias
configuration, Voltage divider bias configuration, collector feedback
configuration, Emitter follower configuration, Miscellaneous
configuration, Design operations, current mirror circuits, current source
circuits, PNP transistors, Transistor switching networks, bias
stabilization of transistors, Practical applications
5 AC analysis of Bipolar Junction Transistors
Introduction, Application in AC domain, BJT Transistor modeling, re
Transistor model of Common-Emitter fixed bias configuration, voltage
divider bias, CE emitter-bias, Emitter follower, Common-base,
Collector feedback , Collector DC feedback configuration, Current
gain, effect of RL and RS ,Two port System Approach, cascaded
systems, Darlington connection, Feedback pair, Hybrid equivalent
model, approximate
hybrid equivalent circuits, Hybrid π model, Practical Applications
6 MOS Field-Effect Transistors
Device Structure and Physical Operation, Current-Voltage
Characteristics, MOSFET Circuits at DC, The MOSFET as an
Amplifier and as a Switch, Biasing in MOS Amplifier Circuits, Small-
Signal Operation and Models, Single-Stage MOS Amplifiers, The
Depletion-Type MOSFET, JFET -construction, operation and
characteristics
7 Frequency Analysis of BJT and FET
Introduction, Decibels, general frequency consideration, Normalized
Process, Low Frequency analysis of BJT and FET, Miller effect
capacitance, High frequency response of BJT and FET, Square wave
testing
8 Power Amplifiers
Introduction, series –fed Class A amplifier, Transformer-Coupled Class
A amplifier, Class B amplifier operation, Class B amplifier circuits,
Amplifier distortion, Class C and Class D amplifier, Heat sink and its
operation
References (Including E- 1. Millman&Halkias, “Integrated Electronics”, McGraw Hill

Publications, 1992.
Resources)
2. Boylestad&Nashlesky, “Electronic Devices & Circuit Theory”,
PHI, 10th Edition.
3. Albert Malvino& David J. Bates, “Electronic Principles”, Tata
McGraw Hill, 7th Edition 2007
4. Floyd, “Electronic Devices”, PHI, 7th Edition
Module Assessment Guidelines
Assessment type
2
1. Test 1
2. Assignment 1
3. Assignment 2
3. Test 2
Final Examination
Suggested List of Experiments
Experiment 1. To study V-I characteristics of PN junction diode.

2. To study Half wave, full wave and Bridge Rectifier.
3. To study transistor characteristics in common base and
common emitter configurations.
4. To study the FET characteristics
5. To design, study and compare various transistor biasing
techniques.
6. To study of an emitter follower circuit.
7. To find Offset Voltage, Gain, CMRR of an Op-amp and study
techniques of \ Offset null adjustment.
8. Diode clippers and clampers.
9. Study and experimental verification of MOSFET.
10. To study Class A amplifier.

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CHINHOYI UNIVERSITY OF TECHNOLOGY

Name of the Lecturer: Eng. S. Magidi

Name of Module and Code: ANALOGUE ELECTRONICS

Department Mechatronic Engineering

References (Including E- 1. Millman&Halkias, “Integrated Electronics”, McGraw Hill

Experiment 1. To study V-I characteristics of PN junction diode.

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