Europe • Micro machines in Japan • Sensors and actuators • Bio-MEMS • MOEMS • RF MEM Schematic illustration of MEMS components.
• Micro sensors detect changes in the
system’s environment by measuring mechanical, thermal, magnetic, chemical or electromagnetic information or phenomena. • Microelectronics process this information and signal the micro actuators to react and create some form of changes to the environment. Diff. b/w MEMS & IC - Applications of MEMS Materials for Micromachining • Substrates: The most common substrate material for micromachining is silicon. It has been successful in the microelectronics industry and will continue to be in areas of miniaturization for several reasons: i. silicon is abundant, inexpensive, and can be processed to unparalleled purity ii. silicon’s ability to be deposited in thin films is very amenable to MEMS iii. high definition and reproduction of silicon device shapes using photolithography are perfect for high levels of MEMS precision iv. silicon microelectronics circuits are batch fabricated (a silicon wafer contains hundreds of identical chips not just one) • Other crystalline semiconductors including germanium (Ge) and gallium arsenide (GaAs) are used as substrate materials due to similar inherent features. • silicon is distinguished from other semiconductors in that it can be readily oxidized to form a chemically inert and electrically insulating surface layer of SiO2 on exposure to steam. MEMS Fabrication Methods • MEMS fall into three general classifications • bulk micromachining • surface micromachining • high-aspect-ratio micromachining (HARM), which includes technology such as LIGA (a German acronym from Lithographie, Galvanoformung, Abformung translated as lithography, electroforming and moulding). Potential complexity of a MEMS system Photolithography • A thin layer of an organic polymer, which is sensitive to ultraviolet radiation, is then deposited on the oxide layer; this is called a photoresist. • A photomask, consisting of a glass plate (transparent) coated with a chromium pattern (opaque), is then placed in contact with the photoresist coated surface. • The wafer is exposed to the ultraviolet radiation transferring the pattern on the mask to the photoresist which is then developed in a way very similar to the process used for developing photographic films. • A chemical (usually hydrochloric acid) is used to attack and remove the uncovered oxide from the exposed areas of the photoresist. • The remaining photoresist is subsequently removed, usually with hot sulphuric acid which attacks the photoresist but not the oxide layer on the silicon, leaving a pattern of oxide on the silicon surface. Bulk Micromachining • Bulk micromachining involves the removal of part of the bulk substrate. • It is a subtractive process that uses • wet anisotropic etching or • dry etching method such as reactive ion etching (RIE), to create large pits, grooves and channels. • Materials typically used for wet etching include silicon and quartz. • Materials typically used dry etching is silicon, metals, plastics and ceramics. Wet Etching • Wet etching describes the removal of material through the immersion of a material (typically a silicon wafer) in a liquid bath of a chemical etchant. • These etchants can be • Isotropic • Anisotropic Wet Etching The most common form of isotropic silicon etch is HNA, which comprises a mixture of hydrofluoric acid (HF), nitric acid (HNO3) and acetic acid (CH3COOH). Isotropic etchants are limited by the geometry of the structure to be etched. Etch rates can slow down and in some cases (for example, in deep and narrow channels) they can stop due to diffusion limiting factors
Anisotropic etchants etch faster in a preferred
direction. Potassium hydroxide (KOH) is the most common anisotropic etchant as it is relatively safe to use. Structures formed in the substrate are dependent on the crystal orientation of the substrate or wafer. Dry Etching • Dry etching relies on vapor phase or plasma-based methods of etching using suitably reactive gases or vapors usually at high temperatures. • The most common form for MEMS is reactive ion etching (RIE) which utilizes additional energy in the form of radio frequency (RF) power to drive the chemical reaction. • Energetic ions are accelerated towards the material to be etched within a plasma phase supplying the additional energy needed for the reaction. • as a result the etching can occur at much lower temperatures (typically 150º - 250ºC, sometimes room temperature) than those usually needed (above 1000ºC). Surface Micromachining • A typical surface micromachined cantilever beam is shown in Figure. • Here, a sacrificial layer of oxide is deposited on the silicon substrate surface using a pattern and photolithography. • A polysilicon layer is then deposited and patterned using RIE processes to form a cantilever beam with an anchor pad. • The wafer is then wet etched to remove the oxide (sacrificial) layer releasing and leaving the beam on the substrate. Fusion Bonding • In order to form more complex and larger MEMS structures, micromachined silicon wafers can be bonded to other materials in a process known as fusion bonding. • It is a technique that enables virtually seamless integration of multiple layers and relies on the creation of atomic bonds between each layer either directly (with heating and pressure in the case of glass to wafer bonding), or through a thin film of silicon dioxide . • Photoresist and polymethylmethacrylate (PMMA) are used as MEMS fusion bonding media and have proved very successful for the bonding of polyimide High-Aspect-Ratio Micromachining • High-aspect-ratio micromachining (HARM) is a process that involves micromachining as a tooling step followed by injection moulding or embossing and, if required, by electroforming to replicate microstructures in metal from moulded parts. • It is one of the most attractive technologies for replicating microstructures at a high performance-to-cost ratio and includes techniques known as LIGA. LIGA • The technique employs X-ray synchrotron radiation to expose thick acrylic resist of PMMA under a lithographic mask