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Pe 600 Ba

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28 views8 pages

Pe 600 Ba

Uploaded by

ardamaxum3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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PE600BA

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

30V 9.8mΩ @VGS = 10V 32A

PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 32
Continuous Drain Current3
TC = 100 °C 20
ID
TA = 25 °C 14
Continuous Drain Current A
TA= 70 °C 11
Pulsed Drain Current1 IDM 90
Avalanche Current IAS 18.5
Avalanche Energy L =0.1mH EAS 17 mJ
TC = 25 °C 17.8
Power Dissipation
TC = 100 °C 7
PD W
4
TA = 25 °C 3.5
Power Dissipation
TA = 70 °C 2.3
Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS


THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient t ≦10s RqJA 35
2
Junction-to-Ambient Steady-State RqJA 75 °C / W
Junction-to-Case Steady-State RqJC 7
1
Pulse width limited by maximum junction temperature.
2
The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
Package limitation current is 16A.
4
The Power dissipation is based on RqJA t ≦10s value.

REV 1.1 1 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
V(BR)DSS VGS = 0V, ID = 250mA 30
Voltage V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.3 1.75 2.3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
Zero Gate Voltage Drain VDS = 24V, VGS = 0V 1
IDSS mA
Current VDS = 20V, VGS = 0V, TJ =55 °C 10
Drain-Source On-State VGS = 4.5V, ID = 9A 10.2 14
RDS(ON) mΩ
Resistance1 VGS = 10V , ID =9A 7.8 9.8
Forward Transconductance1 gfs VDS = 10V, ID = 9A 35 S
DYNAMIC
Input Capacitance Ciss 620
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 108 pF
Reverse Transfer Capacitance Crss 77
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 2.5 Ω
Qg(VGS=10V) 14
Total Gate Charge2
Qg(VGS=4.5V) VDS = 15V , ID = 9A 8
nC
2 Qgs
Gate-Source Charge 2
Gate-Drain Charge2 Qgd 3.8
2 td(on)
Turn-On Delay Time 13
2 tr
Rise Time VDD= 15V, 37
nS
Turn-Off Delay Time 2 td(off) ID @ 9A, VGEN = 10V, RG= 6Ω 48
Fall Time2 tf 25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3 IS 16 A
1 VSD IF = 9A, VGS = 0V
Forward Voltage 1.1 V
Reverse Recovery Time trr 12 nS
IF = 9A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 3 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 16A.

REV 1.1 2 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

REV 1.1 3 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

REV 1.1 4 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

REV 1.1 5 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

A. Marking Information(此产品代码为：F1）

B. Tape&Reel Information:5000pcs/Reel

REV 1.1 6 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

REV 1.1 7 2015/7/20


PE600BA
N-Channel Enhancement Mode MOSFET

D.Label rule
标签内容(Label content)

REV 1.1 8 2015/7/20

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